Abstract: The invention relates to the field of membrane gas separation. A method of removing components of gas mixtures which is based on passing the components of a gas mixture through a nanoporous membrane and subsequently selectively absorbing them with a liquid absorbent that is in contact with the nanoporous membrane, wherein to prevent the gas from getting into the liquid phase of the absorbent and the liquid phase of the absorbent from getting into the gas phase, a nanoporous membrane with homogeneous porosity (size distribution less than 50%) and a pore diameter in the range of 5-500 nm is used, and the pressure differential between the gas phase and the liquid absorbent is kept below the membrane bubble point pressure. An acid gas removal performance of more than 0.3 nm3/(m2 hour) in terms of CO2 is achieved at a hollow-fiber membrane packing density of up to 3200 m2/m3, which corresponds to a specific volumetric performance of acid gas removal of up to 1000 nm3 (m3 hour).

Abstract: The invention relates to the field of membrane gas separation. A method of removing components of gas mixtures which is based on passing the components of a gas mixture through a nanoporous membrane and subsequently selectively absorbing them with a liquid absorbent that is in contact with the nanoporous membrane, wherein to prevent the gas from getting into the liquid phase of the absorbent and the liquid phase of the absorbent from getting into the gas phase, a nanoporous membrane with homogeneous porosity (size distribution less than 50%) and a pore diameter in the range of 5-500 nm is used, and the pressure differential between the gas phase and the liquid absorbent is kept below the membrane bubble point pressure. An acid gas removal performance of more than 0.3 nm3/(m2 hour) in terms of CO2 is achieved at a hollow-fiber membrane packing density of up to 3200 m2/m3, which corresponds to a specific volumetric performance of acid gas removal of up to 1000 nm3 (m3 hour).

Abstract: A device is disclosed which comprises a first electrode (101), a second electrode (104) spaced from the first electrode, a switching region (102) positioned between the first electrode and the second electrode, and an intermediate region (103) positioned between the switching region and the second electrode, wherein the intermediate region is in electrical contact with the switching region and the second electrode. Preferably, the intermediate region comprises metal nanowires (105) in a polymer matrix, and the device is a memristor or a memcapacitor. In the latter case, the switching region comprises a conductive material (106) and an insulating material (107).

Abstract: A device is disclosed which comprises a first electrode (101), a second electrode (104) spaced from the first electrode, a switching region (102) positioned between the first electrode and the second electrode, and an intermediate region (103) positioned between the switching region and the second electrode, wherein the intermediate region is in electrical contact with the switching region and the second electrode. Preferably, the intermediate region comprises metal nanowires (105) in a polymer matrix, and the device is a memristor or a memcapacitor. In the latter case, the switching region comprises a conductive material (106) and an insulating material (107).

Abstract: A device is disclosed which comprises a first electrode (101), a second electrode (104) spaced from the first electrode, a switching region (102) positioned between the first electrode and the second electrode, and an intermediate region (103) positioned between the switching region and the second electrode, wherein the intermediate region is in electrical contact with the switching region and the second electrode. Preferably, the intermediate region comprises metal nanowires (105) in a polymer matrix, and the device is a memristor or a memcapacitor. In the latter case, the switching region comprises a conductive material (106) and an insulating material (107).

Abstract: In accordance with an example embodiment of the present invention, a method is disclosed. The method comprises providing a two-dimensional object comprising a lll-V group material, e.g. Boron nitride (BN), Boron carbon nitride (BCN), Aluminium nitride (AIN), Gallium nitride (GaN), Indium Nitride (InN), Indium phosphide (InP), Indium arsenide (InAs), Boron phosphide (BP), Boron arsenide (BAs), and Gallium phosphide (GaP) and/or a Transition Metal Dichalcogenides (TMD) group material, e.g Molybdenum sulfide (MoS2), Molybdenum diselenide (MoSe2), Tungsten sulfide (WS2), Tungsten diselenide (WSe2), Niobium sulfide (NbS2), Vanadium sulfide (VS2,), and Tantalum sulfide (TaS2) into an environment comprising oxygen; and exposing at least one part of the two-dimensional object to photonic irradiation in said environment, thereby oxidizing at least part of the material of the exposed part of the two-dimensional object.