Abstract: A method and a laser assemblage are described for material processing, such that in a laser assemblage, a laser beam is focused onto a processing/imaging plane and the laser beam can be adapted in terms of its intensity distribution by way of at least one beam shaper. Provision is made in this context that in order to avoid uniformity defects in the processing/imaging plane, the laser beam is split by way of at least one beam splitter into at least two partial or individual beams, and the partial or individual beams are differently influenced, or each partial or individual beam is constituted from a laser source having a different wavelength, in such a way that after they are combined and focused onto the processing/imaging plane they form an output beam having an intensity profile, adjacent intensity maxima of the intensity profile differing in terms of their light properties.

Abstract: A method and a laser assemblage are described for material processing, such that in a laser assemblage, a laser beam is focused onto a processing/imaging plane and the laser beam can be adapted in terms of its intensity distribution by way of at least one beam shaper. Provision is made in this context that in order to avoid uniformity defects in the processing/imaging plane, the laser beam is split by way of at least one beam splitter into at least two partial or individual beams, and the partial or individual beams are differently influenced, or each partial or individual beam is constituted from a laser source having a different wavelength, in such a way that after they are combined and focused onto the processing/imaging plane they form an output beam having an intensity profile, adjacent intensity maxima of the intensity profile differing in terms of their light properties.