Abstract: A memory decoder system is disclosed. In an exemplary embodiment of the invention, the system includes a matrix of memory cells, arranged into rows and columns, with a plurality of wordline drivers corresponding to each row in the matrix. A group of wordline driver-decoder blocks each contains a subset of the plurality of wordline drivers therein, with each of the wordline driver-decoder blocks being separated by a row control block. The row control block includes control circuitry for the wordline drivers. For any given wordline driver-decoder block, a first group of wordline drivers contained therein is controlled by a row control block located on one side of the given wordline driver-decoder block, while a second group of wordline drivers contained therein is controlled by a row control block located on an opposite side of the given wordline driver-decoder block.

Abstract: A wordline activation delay monitor circuit is disclosed wherein at least one sample wordline and a sample wordline redundancy are located within the same data-storing array region of a memory, and a sample wordline selector is coupled to activate the sample wordline or sample wordline redundancy based on the state of a nonvolatile input. The wordline selector circuit may include one or both of a row decoder circuit or a wordline driver circuit which have substantially the same structure and location as row decoder circuits and wordline driver circuits used to activate wordlines within the data-storing array region.

Abstract: A wordline activation delay monitor circuit is disclosed herein which includes a sample wordline located within a data-storing array of a memory, wherein the sample wordline is selected or activated by circuitry having substantially the same structure or location within the memory as circuitry which selects or activates wordlines of the data-storing array. A circuit is disclosed which determines a wordline activation delay for a first subarray group within the memory by activating a sample wordline which is located within a data-storing array of a second subarray group. Corresponding methods are also disclosed.