Patents by Inventor Dmitry KLOCHKOV

Dmitry KLOCHKOV has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230120847
    Abstract: The present invention relates to a method for measuring a sample with a microscope, the method comprising the steps of: measuring a tilt of the sample, correcting an orientation of the sample based on the tilt, and scanning the sample.
    Type: Application
    Filed: October 14, 2021
    Publication date: April 20, 2023
    Inventors: Eugen Foca, Amir Avishai, Dmitry Klochkov, Thomas Korb, Jens Timo Neumann, Keumsil Lee
  • Publication number: 20230115376
    Abstract: A dual-beam device, such as, a scanning electron microscope combined with a focused-ion beam milling column, is employed for a slice-in-image process. Based on one or more images of at least one cross-section of a test volume of a wafer, a wafer tilt is determined.
    Type: Application
    Filed: October 7, 2021
    Publication date: April 13, 2023
    Inventors: Dmitry Klochkov, Chuong Huynh, Thomas Korb
  • Publication number: 20220392793
    Abstract: The present disclosure relates to dual beam device and three-dimensional circuit pattern inspection techniques by cross sectioning of inspection volumes with large depth extension exceeding 1 ?m below the surface of a semiconductor wafer, as well as methods, computer program products and apparatuses for generating 3D volume image data of a deep inspection volume inside a wafer without removal of a sample from the wafer. The disclosure further relates to 3D volume image generation and cross section image alignment methods utilizing a dual beam device for three-dimensional circuit pattern inspection.
    Type: Application
    Filed: August 16, 2022
    Publication date: December 8, 2022
    Inventors: Alex Buxbaum, Eugen Foca, Chuong Huynh, Dmitry Klochkov, Thomas Korb, Jens Timo Neumann, Baohua Niu
  • Publication number: 20220383485
    Abstract: The invention relates to a method and to an apparatus for analyzing an image of a microlithographic microstructured component wherein in the image each of a multiplicity of pixels is assigned in each case an intensity value. A method according to the invention comprises the following steps: isolating a plurality of edge fragments in the image; classifying each of the isolated edge fragments either as a relevant edge fragment or as an irrelevant edge fragment; and ascertaining contiguous segments in the image based on the relevant edge fragments.
    Type: Application
    Filed: May 24, 2022
    Publication date: December 1, 2022
    Inventors: Mario Laengle, Dmitry Klochkov
  • Publication number: 20220230899
    Abstract: A method of determining a size of a contact area between a first 3D structure and a second 3D structure in an integrated semiconductor sample, includes the following steps: obtaining at least a first cross section image and a second cross section image parallel to the first cross section image, wherein obtaining the first and second cross section images includes subsequently removing a cross section surface layer of the integrated semiconductor sample using a focused ion beam to make a new cross section accessible for imaging, and imaging the new cross section of the integrated semiconductor sample with an imaging device; performing image registration of the obtained cross section images and obtaining a 3D data set; determining a 3D model representing the first 3D structure and the second 3D structure in the 3D data set; and determining a relative overlap of the first 3D structure with the second 3D structure based on the 3D model.
    Type: Application
    Filed: April 5, 2022
    Publication date: July 21, 2022
    Inventors: Alex Buxbaum, Amir Avishai, Dmitry Klochkov, Thomas Korb, Eugen Foca, Keumsil Lee
  • Publication number: 20220223445
    Abstract: A 3D tomographic inspection method for the inspection of semiconductor features in an inspection volume of a semiconductor wafer includes obtaining a 3D tomographic image, and selecting a plurality of 2D cross section images. The method also includes identifying contours of HAR structures, and extracting deviation parameters. The deviation parameters describe fabrication errors such as displacement, deviation in radius or diameter, area or shape.
    Type: Application
    Filed: March 29, 2022
    Publication date: July 14, 2022
    Inventors: Amir Avishai, Alex Buxbaum, Eugen Foca, Dmitry Klochkov, Thomas Korb, Keumsil Lee
  • Publication number: 20220138973
    Abstract: A three-dimensional circuit pattern inspection technique includes cross sectioning integrated circuits for obtaining a 3D volume image of an integrated semiconductor sample. The method employs a feature based alignment of cross section images based on features of an integrated semiconductor sample. A computer program product and apparatus are provided.
    Type: Application
    Filed: December 2, 2021
    Publication date: May 5, 2022
    Inventors: Thomas Korb, Jens Timo Neumann, Eugen Foca, Alex Buxbaum, Amir Avishai, Keumsil Lee, Ingo Schulmeyer, Dmitry Klochkov
  • Publication number: 20200218160
    Abstract: In a method for characterizing at least one optical component of a projection exposure apparatus (1), an intensity distribution of the illumination radiation (2) is detected in a field plane of the projection exposure apparatus (1) with a measuring device (31) and predicted values of an optical parameter are spatially determined therefrom over at least one predefined surface.
    Type: Application
    Filed: March 20, 2020
    Publication date: July 9, 2020
    Inventors: Wilbert KRUITHOF, Dirk Heinrich EHM, Dmitry KLOCHKOV, Thomas KORB