Patents by Inventor Dmitry Lubomirsky

Dmitry Lubomirsky has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220390847
    Abstract: A method for processing a substrate is described. The method includes forming a metal containing resist layer onto a substrate, patterning the metal containing resist layer, and performing a post exposure bake on the metal containing resist layer. The post exposure bake on the metal containing resist layer is a field guided post exposure bake operation and includes the use of an electric field to guide the ions or charged species within the metal containing resist layer. The field guided post exposure bake operation may be paired with a post development field guided bake operation.
    Type: Application
    Filed: June 8, 2021
    Publication date: December 8, 2022
    Inventors: Huixiong DAI, Mangesh Ashok BANGAR, Srinivas D. NEMANI, Steven Hiloong WELCH, Ellie Y. YIEH, Dmitry LUBOMIRSKY
  • Publication number: 20220350251
    Abstract: A method and apparatus for performing post-exposure bake operations is described herein. The apparatus includes a plate stack and enables formation of a first high ion density plasma before the ion concentration within the first high ion density plasma is reduced using a diffuser to form a second low ion density plasma. The second low ion density plasma is an electron cloud or a dark plasma. An electric field is formed between a substrate support and the diffuser and through the second low ion density plasma during post-exposure bake of a substrate disposed on the substrate support. The second low ion density plasma electrically couples the substrate support and the diffuser during application of the electric field. The plate stack is equipped with power supplies and insulators to enable the formation or modification of a plasma within three regions of a process chamber.
    Type: Application
    Filed: November 19, 2021
    Publication date: November 3, 2022
    Inventors: Dmitry LUBOMIRSKY, Douglas A. BUCHBERGER, JR., Qiwei LIANG, Hyunjun KIM, Ellie Y. YIEH
  • Patent number: 11476093
    Abstract: An apparatus for plasma processing includes a first plasma source, a first planar electrode, a gas distribution device, a plasma blocking screen and a workpiece chuck. The first plasma source produces first plasma products that pass, away from the first plasma source, through first apertures in the first planar electrode. The first plasma products continue through second apertures in the gas distribution device. The plasma blocking screen includes a third plate with fourth apertures, and faces the gas distribution device such that the first plasma products pass through the plurality of fourth apertures. The workpiece chuck faces the second side of the plasma blocking screen, defining a process chamber between the plasma blocking screen and the workpiece chuck. The fourth apertures are of a sufficiently small size to block a plasma generated in the process chamber from reaching the gas distribution device.
    Type: Grant
    Filed: December 5, 2019
    Date of Patent: October 18, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Toan Q. Tran, Soonam Park, Zilu Weng, Dmitry Lubomirsky
  • Publication number: 20220326618
    Abstract: A post lithography resist treatment apparatus for treating a substrate having a resist layer thereon with a fluid layer thereover includes at least one post exposure bake chamber comprising a substrate support having a substrate support surface thereon, and an electrode, the electrode comprising an electrode body having a substrate support facing side, the substrate support facing side having at least one recess extending inwardly thereof, and at least one projection adjacent to the recess having a substrate support facing surface thereon, wherein the substrate support is moveable to position a substrate, when supported thereon, such that an fluid layer disposed on the substrate contacts the substrate support facing surface of the projection but does not fill the recess with fluid, and the substrate facing surface of the electrode body is spaced from the substrate.
    Type: Application
    Filed: April 11, 2022
    Publication date: October 13, 2022
    Inventors: Dmitry LUBOMIRSKY, Huixiong DAI, Ellie Y. YIEH
  • Publication number: 20220317579
    Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for verification and re-use of process fluids. The apparatus generally includes a tool for performing lithography, and a recirculation path coupled to the tool. The recirculation path generally includes a collection unit coupled at first end to a first end of the tool, and a probe coupled at a first end to a second end of the collection unit, the probe for determining one or more characteristics of a fluid flowing from the tool. The recirculation path of the apparatus further generally includes a purification unit coupled at a first end to a third end of the collection unit, the purification unit further coupled at a second end to a second end of the probe, the purification unit for changing a characteristic of the fluid.
    Type: Application
    Filed: April 5, 2021
    Publication date: October 6, 2022
    Inventors: Mangesh Ashok BANGAR, Gautam PISHARODY, Lancelot HUANG, Alan L. TSO, Douglas A. BUCHBERGER, JR., Huixiong DAI, Dmitry LUBOMIRSKY, Srinivas D. NEMANI, Christopher Siu Wing Ngai
  • Publication number: 20220319896
    Abstract: Embodiments of substrate supports are provided herein. In some embodiments, a substrate support for use in a chemical vapor deposition (CVD) chamber includes: a pedestal to support a substrate, wherein the pedestal includes a dielectric plate coupled to a pedestal body; a rotary union coupled to the pedestal, wherein the rotary union includes a stationary housing disposed about a rotor; a drive assembly coupled to the rotary union; a coolant union coupled to the rotary union and having a coolant inlet fluidly coupled to coolant channels disposed in the pedestal via a coolant line; an RF rotary joint coupled to the coolant union and having an RF connector configured to couple the pedestal to an RF bias power source; and an RF conduit that extends from the RF connector to the pedestal through a central opening of the pedestal body to provide RF bias to the pedestal.
    Type: Application
    Filed: April 2, 2021
    Publication date: October 6, 2022
    Inventors: Qiwei LIANG, Douglas Arthur BUCHBERGER, Jr., Gautam PISHARODY, Dmitry LUBOMIRSKY, Shekhar ATHANI
  • Publication number: 20220293396
    Abstract: Methods and apparatus for reducing particle generation in a remote plasma source (RPS) include an RPS having a first plasma source with a first electrode and a second electrode, wherein the first electrode and the second electrode are symmetrical with hollow cavities configured to induce a hollow cathode effect within the hollow cavities, and wherein the RPS provides radicals or ions into the processing volume, and a radio frequency (RF) power source configured to provide a symmetrical driving waveform on the first electrode and the second electrode to produce an anodic cycle and a cathodic cycle of the RPS, wherein the anodic cycle and the cathodic cycle operate in a hollow cathode effect mode.
    Type: Application
    Filed: May 26, 2022
    Publication date: September 15, 2022
    Inventors: Tae Seung CHO, Saravana Kumar NATARAJAN, Kenneth D. SCHATZ, Dmitry LUBOMIRSKY, Samartha SUBRAMANYA
  • Publication number: 20220269179
    Abstract: A method and apparatus for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes is provided herein. The method and apparatus include an immersion bake head, which includes an electrode and is configured to be alternated between a hot pedestal and a cold pedestal. The immersion bake head serves as a substrate carrier and applies an electric field to the substrate. The immersion bake head additionally serves to provide and remove process fluid from the substrate using a plurality of fluid conduits.
    Type: Application
    Filed: February 9, 2022
    Publication date: August 25, 2022
    Inventors: Douglas A. BUCHBERGER, JR., Dmitry LUBOMIRSKY, John O. DUKOVIC, Srinivas D. NEMANI
  • Publication number: 20220269180
    Abstract: A method and apparatus for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes is provided herein. The method and apparatus include a transfer device and a plurality of modules. The transfer device is configured to rotate a plurality of substrates between each of the modules, wherein one module includes a heating pedestal and another module includes a cooling pedestal. One module is utilized for inserting and removing the substrates from the system. At least the heating module is able to be sealed and filled with a process volume before applying the electric field.
    Type: Application
    Filed: February 9, 2022
    Publication date: August 25, 2022
    Inventors: Douglas A. BUCHBERGER, JR., Dmitry LUBOMIRSKY, John O. DUKOVIC, Srinivas D. NEMANI
  • Publication number: 20220260917
    Abstract: A method and apparatus for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes is provided herein. The method and apparatus include an electrode assembly and a base assembly. The electrode assembly includes a permeable electrode. The base assembly includes one or more process fluid channels disposed around a circumference of the substrate support surface and configured to fill a process volume with a process fluid. The electrode assembly is configured to apply an electric field to a substrate disposed within the process volume.
    Type: Application
    Filed: February 15, 2021
    Publication date: August 18, 2022
    Inventors: Douglas A. BUCHBERGER, JR., Dmitry LUBOMIRSKY, John O. DUKOVIC, Srinivas D. NEMANI
  • Patent number: 11410860
    Abstract: Methods and process chambers for etching of low-k and other dielectric films are described. For example, a method includes modifying portions of the low-k dielectric layer with a plasma process. The modified portions of the low-k dielectric layer are etched selectively over a mask layer and unmodified portions of the low-k dielectric layer. Etch chambers having multiple chamber regions for alternately generating distinct plasmas are described. In embodiments, a first charge coupled plasma source is provided to generate an ion flux to a workpiece in one operational mode, while a secondary plasma source is provided to provide reactive species flux without significant ion flux to the workpiece in another operational mode. A controller operates to cycle the operational modes repeatedly over time to remove a desired cumulative amount of the dielectric material.
    Type: Grant
    Filed: January 8, 2021
    Date of Patent: August 9, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Dmitry Lubomirsky, Srinivas Nemani, Ellie Yieh, Sergey G. Belostotskiy
  • Patent number: 11373845
    Abstract: Methods and apparatus for reducing particle generation in a remote plasma source (RPS) include an RPS having a first plasma source with a first electrode and a second electrode, wherein the first electrode and the second electrode are symmetrical with hollow cavities configured to induce a hollow cathode effect within the hollow cavities, and wherein the RPS provides radicals or ions into the processing volume, and a radio frequency (RF) power source configured to provide a symmetrical driving waveform on the first electrode and the second electrode to produce an anodic cycle and a cathodic cycle of the RPS, wherein the anodic cycle and the cathodic cycle operate in a hollow cathode effect mode.
    Type: Grant
    Filed: June 5, 2020
    Date of Patent: June 28, 2022
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Tae Seung Cho, Saravana Kumar Natarajan, Kenneth D. Schatz, Dmitry Lubomirsky, Samartha Subramanya
  • Publication number: 20220199414
    Abstract: A method and apparatus for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes is provided herein. The method and apparatus include a chamber body, which is configured to be filled with a process fluid, and a substrate carrier. The substrate carrier is disposed outside of the process volume while substrates are loaded onto the substrate carrier, but is rotated to a processing position either simultaneously or before entering the process fluid. The substrate carrier is rotated to a process position parallel to an electrode before an electric field is utilized to perform a post-exposure bake process on the substrate.
    Type: Application
    Filed: December 18, 2020
    Publication date: June 23, 2022
    Inventors: Douglas A. BUCHBERGER, JR., Dmitry LUBOMIRSKY, John O. DUKOVIC, Srinivas D. NEMANI
  • Patent number: 11361941
    Abstract: Methods and apparatus for processing a substrate are herein described. For example, a processing chamber for processing a substrate includes a chamber body defining a processing volume; a radio frequency (RF) power source configured to deliver RF energy to the processing volume for processing a substrate; a substrate support comprising an electrode; an AC power supply configured to supply power to the processing chamber; an RF filter circuit connected between the electrode and the AC power supply; and a controller configured to monitor an RF voltage at the RF filter circuit that is indirectly induced into the electrode by the RF power source during operation, and to determine a processing state in the processing volume based on the monitored RF voltage.
    Type: Grant
    Filed: June 19, 2020
    Date of Patent: June 14, 2022
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Junghoon Kim, Tae Seung Cho, Dmitry Lubomirsky, Toan Tran
  • Patent number: 11361939
    Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define a central channel through the adapter. The adapter may define an exit from a second channel at the second end, and the adapter may define an exit from a third channel at the second end. The central channel, the second channel, and the third channel may each be fluidly isolated from one another within the adapter.
    Type: Grant
    Filed: June 21, 2019
    Date of Patent: June 14, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Mehmet Tugrul Samir, Dongqing Yang, Dmitry Lubomirsky, Peter Hillman, Soonam Park, Martin Yue Choy, Lala Zhu
  • Patent number: 11355317
    Abstract: Plasma is generated in a semiconductor process chamber by a plurality of microwave inputs with slow or fast rotation. Radial uniformity of the plasma is controlled by regulating the power ratio of a center-high mode and an edge-high mode of the plurality of microwave inputs into a microwave cavity. The radial uniformity of the generated plasma in a plasma chamber is attained by adjusting the power ratio for the two modes without inputting time-splitting parameters for each mode.
    Type: Grant
    Filed: December 13, 2018
    Date of Patent: June 7, 2022
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Satoru Kobayashi, Lance Scudder, David Britz, Soonam Park, Dmitry Lubomirsky, Hideo Sugai
  • Patent number: 11348783
    Abstract: Methods and apparatus provide plasma generation for semiconductor process chambers. In some embodiments, the plasma is generated by a system that may comprise a process chamber having at least two upper microwave cavities separated from a lower microwave cavity by a metallic plate with a plurality of radiation slots, at least one microwave input port connected to a first one of the at least two upper microwave cavities, at least two microwave input ports connected to a second one of the at least two upper microwave cavities, and the lower microwave cavity receives radiation through the plurality of radiation slots in the metallic plate from both of the at least two upper microwave cavities, the lower microwave cavity is configured to form an electric field that provides uniform plasma distribution in a process volume of the process chamber.
    Type: Grant
    Filed: September 5, 2019
    Date of Patent: May 31, 2022
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Satoru Kobayashi, Hideo Sugai, Denis Ivanov, Lance Scudder, Dmitry Lubomirsky
  • Publication number: 20220148894
    Abstract: Exemplary support assemblies may include a top puck and a backing plate coupled with the top puck. The support assemblies may include a cooling plate coupled with the backing plate. The support assemblies may include a heater coupled between the cooling plate and the backing plate. The support assemblies may also include a back plate coupled with the backing plate about an exterior of the backing plate. The back plate may at least partially define a volume, and the heater and the cooling plate may be housed within the volume.
    Type: Application
    Filed: January 25, 2022
    Publication date: May 12, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Mehmet Tugrul Samir, Dongqing Yang, Dmitry Lubomirsky, Peter Hillman, Soonam Park, Martin Yue Choy, Lala Zhu
  • Patent number: 11322337
    Abstract: A workpiece carrier is described for a plasma processing chamber that has isolated heater plate blocks. In one example, a plasma processing system has a plasma chamber, a plasma source electrically coupled with a showerhead included within the plasma chamber, a workpiece holder in a processing region of the plasma chamber having a puck to carry a workpiece, wherein the workpiece holder includes a heater plate having a plurality of thermally isolated blocks each thermally coupled to the puck, wherein each block includes a heater to heat a respective block of the heater plate, and wherein the workpiece holder includes a cooling plate fastened to and thermally coupled to the heater plate, the cooling plate defining a cooling channel configured to distribute a heat transfer fluid to transfer heat from the cooling plate, and a temperature controller to independently control each heater.
    Type: Grant
    Filed: May 12, 2017
    Date of Patent: May 3, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Dmitry Lubomirsky, Son T. Nguyen, Anh N. Nguyen, David Palagashvili
  • Patent number: 11302519
    Abstract: Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a nitrogen-free plasma process. The method also involves removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.
    Type: Grant
    Filed: September 9, 2015
    Date of Patent: April 12, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Srinivas D. Nemani, Jeremiah T. Pender, Qingjun Zhou, Dmitry Lubomirsky, Sergey G. Belostotskiy