Patents by Inventor Dmitry Lubomirsky

Dmitry Lubomirsky has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210317049
    Abstract: A heat treated ceramic article includes a ceramic substrate and a ceramic coating on the ceramic substrate. The ceramic coating is a non-sintered ceramic coating that has a different composition than the ceramic substrate. The heat treated ceramic article further includes a transition layer between the ceramic substrate and the ceramic coating, the transition layer comprising first elements from the ceramic coating that have reacted with second elements from the ceramic substrate, wherein the transition layer has a thickness of about 0.1 microns to about 5 microns.
    Type: Application
    Filed: June 24, 2021
    Publication date: October 14, 2021
    Inventors: Jennifer Y. Sun, Ren-Guan Duan, Biraja P. Kanungo, Dmitry Lubomirsky
  • Patent number: 11130142
    Abstract: Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a substrate processing chamber includes a body having a first side and an opposing second side; a gas distribution plate disposed proximate the second side of the body; and a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the body, wherein the body is electrically coupled to the gas distribution plate through the clamp.
    Type: Grant
    Filed: April 10, 2020
    Date of Patent: September 28, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Dmitry Lubomirsky, Vladimir Knyazik, Hamid Noorbakhsh, Jason Della Rosa, Zheng John Ye, Jennifer Y. Sun, Sumanth Banda
  • Patent number: 11101136
    Abstract: Embodiments of the present technology may include a method of etching. The method may include mixing plasma effluents with a gas in a first section of a chamber to form a first mixture. The method may also include flowing the first mixture to a substrate in a second section of the chamber. The first section and the second section may include nickel plated material. The method may further include reacting the first mixture with the substrate to etch a first layer selectively over a second layer. In addition, the method may include forming a second mixture including products from reacting the first mixture with the substrate.
    Type: Grant
    Filed: May 20, 2019
    Date of Patent: August 24, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Dongqing Yang, Tien Fak Tan, Peter Hillman, Lala Zhu, Nitin K. Ingle, Dmitry Lubomirsky, Christopher Snedigar, Ming Xia
  • Publication number: 20210217591
    Abstract: A method and apparatus for substrate etching are described herein. A processing chamber described herein includes a source module, a process module, a flow module, and an exhaust module. An RF source may be coupled to the chamber and a remote plasma may be generated in the source module and a direct plasma may be generated in the process module. Cyclic etching processes described may use alternating radical and direct plasmas to etch a substrate.
    Type: Application
    Filed: March 31, 2021
    Publication date: July 15, 2021
    Inventors: Toan Q. TRAN, Soonam PARK, Junghoon KIM, Dmitry LUBOMIRSKY
  • Patent number: 11062887
    Abstract: Semiconductor processing systems are described, which may include a substrate support assembly having a substrate support surface. Exemplary substrate support assemblies may include a ceramic heater defining the substrate support surface. The assemblies may include a ground plate on which the ceramic heater is seated. The assemblies may include a stem with which the ground plate is coupled. The assemblies may include an electrode embedded within the ceramic heater at a depth from the substrate support surface. The chambers or systems may also include an RF match configured to provide an AC current and an RF power through the stem to the electrode. The RF match may be coupled with the substrate support assembly along the stem. The substrate support assembly and RF match may be vertically translatable within the semiconductor processing system.
    Type: Grant
    Filed: September 17, 2018
    Date of Patent: July 13, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Soonam Park, David Benjaminson, Xikun Wang, Dmitry Lubomirsky
  • Patent number: 11049698
    Abstract: Described processing chambers may include a chamber housing at least partially defining an interior region of the semiconductor processing chamber. The cambers may include a pedestal. The chambers may include a first showerhead positioned between the lid and the processing region, and may include a faceplate positioned between the first showerhead and the processing region. The chambers may also include a second showerhead positioned within the chamber between the faceplate and the processing region of the semiconductor processing chamber. The second showerhead may include at least two plates coupled together to define a volume between the at least two plates. The at least two plates may at least partially define channels through the second showerhead, and each channel may be characterized by a first diameter at a first end of the channel and may be characterized by a plurality of ports at a second end of the channel.
    Type: Grant
    Filed: April 28, 2017
    Date of Patent: June 29, 2021
    Assignee: Applied Materials, Inc.
    Inventor: Dmitry Lubomirsky
  • Patent number: 11049755
    Abstract: Exemplary support assemblies may include a top puck defining a substrate support surface, where the top puck is also characterized by a height. The assemblies may include a stem coupled with the top puck on a second surface of the top puck opposite the substrate support surface. The assemblies may include an RF electrode embedded within the top puck proximate the substrate support surface. The assemblies may include a heater embedded within the top puck. The assemblies may also include a ground shield embedded within the top puck. The ground shield may be characterized by an inner region extending radially through the top puck. The ground shield may further be characterized by an outer region extending perpendicular to the inner region.
    Type: Grant
    Filed: September 14, 2018
    Date of Patent: June 29, 2021
    Assignee: Applied Materials, Inc.
    Inventors: David Benjaminson, Michael Grace, Soonam Park, Dmitry Lubomirsky, Jaeyong Cho, Nikolai Kalnin, Don Channa K Kaluarachchi
  • Publication number: 20210189564
    Abstract: Exemplary semiconductor processing chamber showerheads may include a dielectric plate characterized by a first surface and a second surface opposite the first surface. The dielectric plate may define a plurality of apertures through the dielectric plate. The dielectric plate may define a first annular channel in the first surface of the dielectric plate, and the first annular channel may extend about the plurality of apertures. The dielectric plate may define a second annular channel in the first surface of the dielectric plate. The second annular channel may be formed radially outward from the first annular channel. The showerheads may also include a conductive material embedded within the dielectric plate and extending about the plurality of apertures without being exposed by the apertures. The conductive material may be exposed at the second annular channel.
    Type: Application
    Filed: February 16, 2021
    Publication date: June 24, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Laksheswar Kalita, Soonam Park, Dmitry Lubomirsky, Tien Fak Tan, LokKee Loh, Saravjeet Singh, Tae Won Kim
  • Publication number: 20210183620
    Abstract: Exemplary processing chambers may include a chamber housing at least partially defining an interior region of the semiconductor processing chamber. The chambers may include a showerhead positioned within the chamber housing. The showerhead may at least partially separate the interior region into a remote region and a processing region. Sidewalls of the chamber housing may at least partially define the processing region. The chambers may include a substrate support extending into the processing region and configured to support a substrate. The chambers may include an inductively-coupled plasma source positioned between the showerhead and the substrate support. The inductively-coupled plasma source may include a conductive material disposed within a dielectric material. The inductively-coupled plasma source may form a portion of the sidewalls of the chamber housing.
    Type: Application
    Filed: December 13, 2019
    Publication date: June 17, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Wei Tian, Toan Q. Tran, Dmitry Lubomirsky, Greg Toland, Satoru Kobayashi
  • Patent number: 11024486
    Abstract: An exemplary system may include a chamber configured to contain a semiconductor substrate in a processing region of the chamber. The system may include a first remote plasma unit fluidly coupled with a first access of the chamber and configured to deliver a first precursor into the chamber through the first access. The system may still further include a second remote plasma unit fluidly coupled with a second access of the chamber and configured to deliver a second precursor into the chamber through the second access. The first and second access may be fluidly coupled with a mixing region of the chamber that is separate from and fluidly coupled with the processing region of the chamber. The mixing region may be configured to allow the first and second precursors to interact with each other externally from the processing region of the chamber.
    Type: Grant
    Filed: April 28, 2017
    Date of Patent: June 1, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Dmitry Lubomirsky, Xinglong Chen, Shankar Venkataraman
  • Patent number: 11004661
    Abstract: A method and apparatus for substrate etching are described herein. A processing chamber described herein includes a source module, a process module, a flow module, and an exhaust module. An RF source may be coupled to the chamber and a remote plasma may be generated in the source module and a direct plasma may be generated in the process module. Cyclic etching processes described may use alternating radical and direct plasmas to etch a substrate.
    Type: Grant
    Filed: January 13, 2016
    Date of Patent: May 11, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Toan Q. Tran, Soonam Park, Junghoon Kim, Dmitry Lubomirsky
  • Publication number: 20210134618
    Abstract: Methods and process chambers for etching of low-k and other dielectric films are described. For example, a method includes modifying portions of the low-k dielectric layer with a plasma process. The modified portions of the low-k dielectric layer are etched selectively over a mask layer and unmodified portions of the low-k dielectric layer. Etch chambers having multiple chamber regions for alternately generating distinct plasmas are described. In embodiments, a first charge coupled plasma source is provided to generate an ion flux to a workpiece in one operational mode, while a secondary plasma source is provided to provide reactive species flux without significant ion flux to the workpiece in another operational mode. A controller operates to cycle the operational modes repeatedly over time to remove a desired cumulative amount of the dielectric material.
    Type: Application
    Filed: January 8, 2021
    Publication date: May 6, 2021
    Inventors: Dmitry Lubomirsky, Srinivas Nemani, Ellie Yieh, Sergey G. Belostotskiy
  • Patent number: 10964512
    Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.
    Type: Grant
    Filed: March 30, 2018
    Date of Patent: March 30, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Mehmet Tugrul Samir, Dongqing Yang, Dmitry Lubomirsky
  • Publication number: 20210082665
    Abstract: Exemplary semiconductor processing systems may include a pedestal configured to support a semiconductor substrate. The pedestal may be operable as a first plasma-generating electrode. The systems may include a lid plate defining a radial volume. The systems may include a faceplate supported with the lid plate. The faceplate may be operable as a second plasma-generating electrode. A plasma processing region may be defined between the pedestal and the faceplate within the radial volume defined by the faceplate. The faceplate may define a plurality of first apertures. The systems may include a showerhead positioned between the faceplate and the pedestal. The showerhead may define a plurality of second apertures comprising a greater number of apertures than the plurality of first apertures.
    Type: Application
    Filed: September 10, 2020
    Publication date: March 18, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Greg Toland, Kenneth D. Schatz, Laksheswar Kalita, Dmitry Lubomirsky
  • Publication number: 20210074539
    Abstract: Methods and apparatus provide plasma generation for semiconductor process chambers. In some embodiments, the plasma is generated by a system that may comprise a process chamber having at least two upper microwave cavities separated from a lower microwave cavity by a metallic plate with a plurality of radiation slots, at least one microwave input port connected to a first one of the at least two upper microwave cavities, at least two microwave input ports connected to a second one of the at least two upper microwave cavities, and the lower microwave cavity receives radiation through the plurality of radiation slots in the metallic plate from both of the at least two upper microwave cavities, the lower microwave cavity is configured to form an electric field that provides uniform plasma distribution in a process volume of the process chamber.
    Type: Application
    Filed: September 5, 2019
    Publication date: March 11, 2021
    Inventors: Satoru Kobayashi, Hideo Sugai, Denis Ivanov, Lance Scudder, Dmitry Lubomirsky
  • Patent number: 10923367
    Abstract: Methods and process chambers for etching of low-k and other dielectric films are described. For example, a method includes modifying portions of the low-k dielectric layer with a plasma process. The modified portions of the low-k dielectric layer are etched selectively over a mask layer and unmodified portions of the low-k dielectric layer. Etch chambers having multiple chamber regions for alternately generating distinct plasmas are described. In embodiments, a first charge coupled plasma source is provided to generate an ion flux to a workpiece in one operational mode, while a secondary plasma source is provided to provide reactive species flux without significant ion flux to the workpiece in another operational mode. A controller operates to cycle the operational modes repeatedly over time to remove a desired cumulative amount of the dielectric material.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: February 16, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Dmitry Lubomirsky, Srinivas Nemani, Ellie Yieh, Sergey G. Belostotskiy
  • Patent number: 10920319
    Abstract: Exemplary semiconductor processing chamber showerheads may include a dielectric plate characterized by a first surface and a second surface opposite the first surface. The dielectric plate may define a plurality of apertures through the dielectric plate. The dielectric plate may define a first annular channel in the first surface of the dielectric plate, and the first annular channel may extend about the plurality of apertures. The dielectric plate may define a second annular channel in the first surface of the dielectric plate. The second annular channel may be formed radially outward from the first annular channel. The showerheads may also include a conductive material embedded within the dielectric plate and extending about the plurality of apertures without being exposed by the apertures. The conductive material may be exposed at the second annular channel.
    Type: Grant
    Filed: January 11, 2019
    Date of Patent: February 16, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Laksheswar Kalita, Soonam Park, Dmitry Lubomirsky, Tien Fak Tan, LokKee Loh, Saravjeet Singh, Tae Won Kim
  • Patent number: 10920320
    Abstract: Methods of monitoring a plasma while processing a semiconductor substrate are described. In embodiments, the methods include determining the difference in power between the power delivered from the plasma power supply and the power received by the plasma in a substrate processing chamber. The power received may be determined using a V/I sensor positioned after the matching circuit. The power reflected or the power lost is the difference between the delivered power and the received power. The process may be terminated by removing the delivered power if the reflected power is above a setpoint. The VRF may further be fourier transformed into frequency space and compared to the stored fourier transform of a healthy plasma process. Missing frequencies from the VRF fourier transform may independently or further indicate an out-of-tune plasma process and the process may be terminated.
    Type: Grant
    Filed: June 16, 2017
    Date of Patent: February 16, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Junghoon Kim, Soonam Park, Tae Seung Cho, Dmitry Lubomirsky, Nikolai Kalnin
  • Patent number: 10903052
    Abstract: Exemplary systems according to embodiments of the present technology include a housing that defines a process chamber and a waveguide cavity. A first conductive plate is disposed within the housing. The system also includes a second conductive plate positioned within the housing and at least partially defining the waveguide cavity. The second conductive plate is vertically translatable within the housing to adjust a distance between the first conductive plate and the second conductive plate to affect modes of electromagnetic radiation propagating within the waveguide cavity. The systems also include one or more electronics sets that are configured to transmit the electromagnetic radiation into the waveguide cavity to produce plasma from at least one process gas delivered within the process chamber.
    Type: Grant
    Filed: August 9, 2019
    Date of Patent: January 26, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Satoru Kobayashi, Hideo Sugai, Nikolai Kalnin, Soonam Park, Toan Tran, Dmitry Lubomirsky
  • Publication number: 20210022212
    Abstract: A plurality of heating zones in a substrate support assembly in a chamber is independently controlled. Temperature feedback from a plurality of temperature detectors is provided as a first input to a process control algorithm, which may be a closed-loop algorithm. A second input to the process control algorithm is targeted values of heater temperature for one or more heating zones, as calculated using a model. Targeted values of heater power needed for achieving the targeted values of heater temperature for the one or more heating zones is calculated. Chamber hardware is controlled to match the targeted value of heater temperature that is correlated with the wafer characteristics corresponding to the current optimum values of the one or more process parameters.
    Type: Application
    Filed: July 18, 2019
    Publication date: January 21, 2021
    Inventors: Mauro Cimino, Don Channa Kaluarachchi, Son Phi, Ramyashree Vishnuprasad, Dmitry Lubomirsky