Abstract: A semiconductor structure (and method for manufacturing the same) comprises an active array of first elements having a first manufacturing precision, a peripheral region surrounding the active array, the peripheral region including second elements having a second manufacturing precision less than the first manufacturing precision, wherein the second elements are isolated from the active array and comprise passive devices for improving operations of the active array.

Abstract: A memory structure comprises a plurality of banks (each of the banks including a plurality of blocks) a plurality of timing critical address lines connected to all of the blocks in respective ones of the banks (a number of the critical address lines being equal to a number of the banks), and a plurality of dedicated address lines connected to respective ones of the blocks.

Abstract: A memory structure comprises a plurality of banks (each of the banks including a plurality of blocks) a plurality of timing critical address lines connected to all of the blocks in respective ones of the banks (a number of the critical address lines being equal to a number of the banks), and a plurality of dedicated address lines connected to respective ones of the blocks.

Abstract: An integrated circuit memory device comprising an arrangement of physical wordlines, WL0-WLn, arrange such that each wordline is addressed by a plurality of pairs, An+1, An, of logical row address bits, and such that at least one pair of logical row address bits, corresponding to physically adjacent wordlines Wlm, Wlm+1, Wlm+2 in succession, cycles between binary states which encode the ternary results A, B and C in succession. The ternary results A, B or C are used to determine which two bitlines of a possible three bitlines are selected by a multiplexer which connects the bitlines to a sense amplifier for determining the state of a bit stored in a memory cell accessed by an activated wordline and a selected bitline. Preferably, the ternary results A, B and C are respectively encoded by said binary states of said pair of logical row address bits, said binary states being “00,” “01,” and “10” respectively.

Abstract: There is provided a semiconductor memory device that includes: a plurality of memory cells arranged in at least two groups; at least one sense amplifier; a first and a second multiplexer; and at least one programmable control device. Each multiplexer is adapted to couple at least one of the groups to the amplifier. The programmable control device is adapted to control the first and said second multiplexers. In one embodiment, the programmable control device is adapted to control the multiplexers independently.

Abstract: An arrangement of enhanced drivability transistors is disclosed herein which includes a plurality of conductor patterns, wherein the conductor patterns include ring-shaped portions which enclose device diffusion contacts and the ring-shaped portions form the gate conductors of insulated gate field effect transistors (IGFETs).

Abstract: A semiconductor structure (and method for manufacturing the same) comprises an active array of first elements having a first manufacturing precision, a peripheral region surrounding the active array, the peripheral region including second elements having a second manufacturing precision less than the first manufacturing precision, wherein the second elements are isolated from the active array and comprise passive devices for improving operations of the active array.