Patents by Inventor Dmitry Pavlovich Prikhodko

Dmitry Pavlovich Prikhodko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7477106
    Abstract: A power amplifier (100) suitable for use in mobile telecommunications equipment has a first stage (2) and an optional second stage (2), each stage being provided with a bias circuit (4, 5). To provide a well-defined gain characteristic, in the first stage (1) a bias current (Ib1) is fed into a signal amplifying transistor (T1). The first bias circuit (4) comprises non-linear a voltage/current converter (41) coupled to a current mirror (40). To suit alternative applications, such as GSM and UMTS requiring a different bias, plural voltage/current converters (41, 42) may be provided in parallel.
    Type: Grant
    Filed: November 20, 2003
    Date of Patent: January 13, 2009
    Assignee: NXP B.V.
    Inventors: Adrianus Van Bezooijen, Dmitry Pavlovich Prikhodko
  • Patent number: 7274206
    Abstract: A detection circuit for detecting the output power of a power amplifier comprises a first current minor transistor (Ti 1) having a base, which is connectable to a power transistor (T10), and a collector, a RF detection means (RF-det) for detecting the RF current flowing through the current mirror transistor (T11). Said RF detection means (RFdet) is connected to the collector of said first current mirror transistor (T11). Said detection circuit further comprises a biasing means (bias-RF-det) for biasing said RF detection means (RF-det), wherein said biasing means is connected to said collector of said first current mirror (T11) and said RF detection means (RF-det).
    Type: Grant
    Filed: June 15, 2004
    Date of Patent: September 25, 2007
    Assignee: NXP B.V.
    Inventors: Dmitry Pavlovich Prikhodko, Adrianus Van Bezooijen, Christophe Chanlo, John Joseph Hug, Ronald Koster
  • Patent number: 6990323
    Abstract: A RF power amplifier circuit has at least one power transistor and a protection circuit protecting the power transistor against high voltages that lead to a destructive breakdown of the transistor. The circuit comprises a power transistor (2), a biasing circuit (6) biasing the power transistor; a peak detector (8) measuring the output voltage of the power transistor; and a comparator circuit (12) connected to the peak detector (8) and designed to reduce the base current of the power transistor (2) when controlled by the peak detector (8).
    Type: Grant
    Filed: October 11, 2002
    Date of Patent: January 24, 2006
    Assignee: Koninklijke Philips Electronics N.V.
    Inventors: Dmitry Pavlovich Prikhodko, Albertus Gerardus Wilhelmus Philipus Van Zuijlen, Niels Kramer
  • Publication number: 20030087626
    Abstract: A RF power amplifier circuit has at least one power transistor and a protection circuit protecting the power transistor against high voltages that lead to a destructive breakdown of the transistor. The circuit comprises a power transistor (2), a biasing circuit (6) biasing the power transistor; a peak detector (8) measuring the output voltage of the power transistor; and a comparator circuit (12) connected to the peak detector (8) and designed to reduce the base current of the power transistor (2) when controlled by the peak detector (8).
    Type: Application
    Filed: October 11, 2002
    Publication date: May 8, 2003
    Inventors: Dmitry Pavlovich Prikhodko, Albertus Gerardus Wilhelmus Philipus Van Zuijlen, Niels Kramer