Patents by Inventor Dmitry Poplavskyy
Dmitry Poplavskyy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210111300Abstract: A thin film deposition system and method for forming photovoltaic cells, the system including a first deposition module including a titanium sputtering target and configured to deposit a titanium precursor layer of a diffusion barrier on the substrate, as the substrate moves through the first deposition module; a second deposition module configured to deposit a first electrode onto the diffusion barrier, as the substrate moves through the second deposition module; and a first connection unit configured to nitride at least a portion of the titanium precursor layer of the diffusion barrier, while the substrate moves though the first connection unit from the first deposition module to the second deposition module.Type: ApplicationFiled: October 9, 2020Publication date: April 15, 2021Inventors: Robel FESSEHATZION, Ben HICKEY, Jochen TITUS, Dmitry POPLAVSKYY, Neil MACKIE
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Publication number: 20210074871Abstract: Described herein are interconnections for photovoltaic cells and/or photovoltaic modules. In some implementations, one or more first photovoltaic cells generate a first electric current in response to exposure to an illumination source. One or more second cells, which may be located in tandem with the one or more first photovoltaic cells, generate a second electric current in response to exposure to the illumination source. The one or more second cells may be coupled to an output terminal utilizing a conductive film comprising a plurality of conductive vias which function to conduct current from the one or more second cells to the output terminal. In particular embodiments, photovoltaic cells of first and second types may be independently tested and verified prior to being combined to form a tandemly-arranged photovoltaic module.Type: ApplicationFiled: September 11, 2019Publication date: March 11, 2021Inventors: Timothy Nagle, Rouin Farshchi, Dmitry Poplavskyy
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Publication number: 20200010947Abstract: A sputter deposition system and method, the system including a process module containing a vacuum enclosure configured to receive a moving substrate, a first sputtering target disposed in the vacuum enclosure and including a target material, and a shield disposed between the first sputtering target and the substrate, the shield having upper and lower edges. At least a portion of each of the upper and lower edges is not parallel to a movement direction of the substrate past the first sputtering target.Type: ApplicationFiled: July 5, 2018Publication date: January 9, 2020Inventor: Dmitry POPLAVSKYY
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Publication number: 20190341520Abstract: A method of making a semiconductor device includes forming a semiconductor material stack having a sodium at an atomic concentration greater than 1×1019/cm3, depositing a transparent conductive oxide layer over the semiconductor material stack, such that sodium atoms diffuse from the semiconductor material stack into the transparent conductive oxide layer, and contacting a physically exposed surface of the transparent conductive oxide layer with a fluid to remove sodium from the transparent conductive oxide layer.Type: ApplicationFiled: July 17, 2019Publication date: November 7, 2019Inventor: Dmitry Poplavskyy
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Publication number: 20190252564Abstract: A photovoltaic power generation and storage (PPGS) device includes an electrically conductive substrate, a solar cell disposed on a first side of the substrate, the solar cell including an absorber layer disposed between an anode and a cathode, and a solid-state battery printed on an opposing second side of the substrate, the battery including an electrolyte layer disposed between an anode and a cathode. The method of forming the PPGS device includes forming a semiconductor material stack including a solar cell p-n junction on a first surface of a conductive web, and printing solid-state batteries on an opposing second surface of at least a portion of the conductive web.Type: ApplicationFiled: February 12, 2018Publication date: August 15, 2019Inventors: Rouin FARSHCHI, Dmitry POPLAVSKYY
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Patent number: 10367116Abstract: A method of making a semiconductor device includes forming a semiconductor material stack having a sodium at an atomic concentration greater than 1×1019/cm3, depositing a transparent conductive oxide layer over the semiconductor material stack, such that sodium atoms diffuse from the semiconductor material stack into the transparent conductive oxide layer, and contacting a physically exposed surface of the transparent conductive oxide layer with a fluid to remove sodium from the transparent conductive oxide layer.Type: GrantFiled: July 25, 2018Date of Patent: July 30, 2019Assignee: BEIJING APOLLO DING RONG SOLAR TECHNOLOGY CO., LTD.Inventor: Dmitry Poplavskyy
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Publication number: 20180331248Abstract: A method of making a semiconductor device includes forming a semiconductor material stack having a sodium at an atomic concentration greater than 1×1019/cm3, depositing a transparent conductive oxide layer over the semiconductor material stack, such that sodium atoms diffuse from the semiconductor material stack into the transparent conductive oxide layer, and contacting a physically exposed surface of the transparent conductive oxide layer with a fluid to remove sodium from the transparent conductive oxide layer.Type: ApplicationFiled: July 25, 2018Publication date: November 15, 2018Inventor: Dmitry Poplavskyy
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Patent number: 10062801Abstract: A method of making a semiconductor device includes forming a semiconductor material stack having a sodium at an atomic concentration greater than 1×1019/cm3, depositing a transparent conductive oxide layer over the semiconductor material stack, such that sodium atoms diffuse from the semiconductor material stack into the transparent conductive oxide layer, and contacting a physically exposed surface of the transparent conductive oxide layer with a fluid to remove sodium from the transparent conductive oxide layer.Type: GrantFiled: April 26, 2017Date of Patent: August 28, 2018Assignee: BEIJING APOLLO DING RONG SOLAR TECHNOLOGY CO., LTD.Inventor: Dmitry Poplavskyy
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Publication number: 20170317227Abstract: A method of making a semiconductor device includes forming a semiconductor material stack having a sodium at an atomic concentration greater than 1×1019/cm3, depositing a transparent conductive oxide layer over the semiconductor material stack, such that sodium atoms diffuse from the semiconductor material stack into the transparent conductive oxide layer, and contacting a physically exposed surface of the transparent conductive oxide layer with a fluid to remove sodium from the transparent conductive oxide layer.Type: ApplicationFiled: April 26, 2017Publication date: November 2, 2017Inventor: Dmitry POPLAVSKYY
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Patent number: 9496136Abstract: A silicon nanoparticle fluid including a) a set of silicon nanoparticles present in an amount of between about 1 wt % and about 20 wt % of the silicon nanoparticie fluid; b) a set of HMW binder molecules present in an amount of between about 0 wt % and about 10 wt % of the silicon nanoparticle fluid; and c) a set of capping agent molecules, such that at least some capping agent molecules are attached to the set of silicon nanoparticles. Preferably, the silicon nanoparticle fluid is a shear thinning fluid.Type: GrantFiled: September 24, 2010Date of Patent: November 15, 2016Assignee: Innovalight, Inc.Inventors: Hyungrak Kim, Malcolm Abbott, Andreas Meisel, Elizabeth Tai, Augustus Jones, Dmitry Poplavskyy, Karel Vanheusden
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Patent number: 9306087Abstract: A method for manufacturing a photovoltaic cell with a locally diffused rear side, comprising steps of: (a) providing a doped silicon substrate, the substrate comprising a front, sunward facing, surface and a rear surface; (b) forming a silicon dioxide layer on the front surface and the rear surface; (c) depositing a boron-containing doping paste on the rear surface in a pattern, the boron-containing paste comprising a boron compound and a solvent; (d) depositing a phosphorus-containing doping paste on the rear surface in a pattern, the phosphorus-containing doping paste comprising a phosphorus compound and a solvent; (e) heating the silicon substrate in an ambient to a first temperature and for a first time period in order to locally diffuse boron and phosphorus into the rear surface of the silicon substrate.Type: GrantFiled: September 4, 2012Date of Patent: April 5, 2016Assignee: E I DU PONT DE NEMOURS AND COMPANYInventors: Giuseppe Scardera, Maxim Kelman, Elena V Rogojina, Dmitry Poplavskyy, Elizabeth Tai, Gonghou Wang
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Patent number: 9246029Abstract: A method for manufacturing an interdigitated back contact solar cell, comprising steps of: (a) providing a doped silicon substrate; (b) doping the rear surface of the substrate homogeneously with boron in a blanket pattern, thereby forming a p+ region on the rear surface of the silicon substrate; (c) forming a silicon dioxide layer on the front and rear surface; (d) depositing a phosphorus-containing doping paste on the rear surface in a second pattern; (e) heating the silicon substrate to locally diffuse phosphorus into the rear surface of the silicon substrate, thereby forming an n+ region on the rear surface of the silicon substrate through the second pattern, wherein the p+ region and the n+ region on the rear surface collectively form an interdigitated pattern; and (f) removing the second silicon dioxide layer from the silicon substrate.Type: GrantFiled: February 20, 2015Date of Patent: January 26, 2016Assignee: E I DU PONT DE NEMOURS AND COMPANYInventors: Giuseppe Scardera, Dmitry Poplavskyy, Daniel Aneurin Inns, Karim Lotfi Bendimerad, Shannon Dugan
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Publication number: 20150187968Abstract: A method for manufacturing an interdigitated back contact solar cell, comprising steps of: (a) providing a doped silicon substrate; (b) doping the rear surface of the substrate homogeneously with boron in a blanket pattern, thereby forming a p+ region on the rear surface of the silicon substrate; (c) forming a silicon dioxide layer on the front and rear surface; (d) depositing a phosphorus-containing doping paste on the rear surface in a second pattern; (e) heating the silicon substrate to locally diffuse phosphorus into the rear surface of the silicon substrate, thereby forming an n+ region on the rear surface of the silicon substrate through the second pattern, wherein the p+ region and the n+ region on the rear surface collectively form an interdigitated pattern; and (f) removing the second silicon dioxide layer from the silicon substrate.Type: ApplicationFiled: February 20, 2015Publication date: July 2, 2015Inventors: GIUSEPPE SCARDERA, DMITRY POPLAVSKYY, DANIEL ANEURIN INNS, KARIM LOTFI BENDIMERAD, SHANNON DUGAN
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Patent number: 9059341Abstract: A method for manufacturing an interdigitated back contact solar cell. comprising the steps of: (a) providing a silicon substrate doped with a first dopant; (b) doping the rear surface of the silicon substrate with a second dopant in a first pattern; (c) forming a silicon dioxide layer on the rear surface; (d) depositing a silicon-containing paste comprising silicon-containing particles on the silicon dioxide layer in a second pattern; (e) exposing the substrate to a diffusion ambient, wherein the diffusion ambient comprises a third dopant and wherein the third dopant is a counter dopant to the second dopant; (f) heating the substrate in a drive-in ambient; and (g) removing the silicon dioxide layer and the doped silicate glass layer from the silicon substrate, wherein a region doped with the second dopant and a region doped with the third dopant collectively form an interdigitated pattern on the rear surface of the silicon substrate.Type: GrantFiled: January 23, 2014Date of Patent: June 16, 2015Assignee: E I DU PONT DE NEMOURS AND COMPANYInventors: Giuseppe Scardera, Maxim Kelman, Shannon Dugan, Dmitry Poplavskyy, Daniel Aneurin Inns, Karim Lotfi Bendimerad
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Patent number: 9048374Abstract: A method for manufacturing an interdigitated back contact solar cell, comprising steps of: (a) providing a doped silicon substrate; (b) forming a first silicon dioxide layer on the front surface and the rear surface; (c) depositing a boron-containing doping paste on the first silicon dioxide layer of the rear surface in a first pattern; (d) heating the silicon substrate; (e) removing the first silicon dioxide layer; (f) forming a second silicon dioxide layer on the front surface and the rear surface; (g) depositing a phosphorus-containing doping paste on the second dioxide layer of the rear surface in a second pattern; (h) heating the silicon substrate; and (i) removing the second silicon dioxide layer from the silicon substrate, wherein the first pattern and the second pattern collectively form an interdigitated pattern.Type: GrantFiled: November 20, 2013Date of Patent: June 2, 2015Assignee: E I DU PONT DE NEMOURS AND COMPANYInventors: Giuseppe Scardera, Dmitry Poplavskyy, Daniel Aneurin Inns, Karim Lotfi Bendimerad, Shannon Dugan
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Publication number: 20150140725Abstract: A method for manufacturing an interdigitated back contact solar cell, comprising steps of: (a) providing a doped silicon substrate; (b) forming a first silicon dioxide layer on the front surface and the rear surface; (c) depositing a boron-containing doping paste on the first silicon dioxide layer of the rear surface in a first pattern; (d) heating the silicon substrate; (e) removing the first silicon dioxide layer; (f) forming a second silicon dioxide layer on the front surface and the rear surface; (g) depositing a phosphorus-containing doping paste on the second dioxide layer of the rear surface in a second pattern; (h) heating the silicon substrate; and (i) removing the second silicon dioxide layer from the silicon substrate, wherein the first pattern and the second pattern collectively form an interdigitated pattern.Type: ApplicationFiled: November 20, 2013Publication date: May 21, 2015Applicant: E I DU PONT DE NEMOURS AND COMPANYInventors: GIUSEPPE SCARDERA, Dmitry Poplavskyy, Daniel Aneurin Inns, Karim Lotfi Bendimerad, Shannon Dugan
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Publication number: 20150053256Abstract: A method of making a solar cell may include depositing in a first pattern a first ink comprising a first dopant on a back surface of a substrate that is doped with a second dopant being of the same type as the first dopant; then, depositing a second ink comprising a set of undoped semiconductor nanoparticles over the first ink on the back surface of the substrate in a second pattern matching the first pattern; then, heating the semiconductor substrate so that the first dopant diffuses into the substrate and thereby, forms a third pattern of localized doped regions; then, exposing the substrate to a doping ambient comprising a third dopant being of the opposite type to the second dopant, thereby forming a doped semiconductor layer on the front surface and a portion of the back surface not covered by the second ink, and then, removing the deposited ink.Type: ApplicationFiled: August 26, 2013Publication date: February 26, 2015Applicant: E I DU PONT DE NEMOURS AND COMPANYInventors: DMITRY POPLAVSKYY, Giuseppe Scardera, Karim Lotfi Bendimerad, Daniel Aneurin Inns
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Patent number: 8895348Abstract: A solar cell, comprising: a doped silicon substrate, the silicon substrate comprising a front surface and a rear surface; a front phosphorous diffusion layer formed on the front surface; a front anti-reflective layer formed on the front phosphorous diffusion layer; a front metal electrode on the front surface in ohmic contact with the front phosphorous diffusion layer through the front anti-reflective layer; a rear passivation layer formed on the rear surface; a rear metal electrode in a pattern on the rear surface passing through the rear passivation layer; and a rear p+ diffusion area on the rear surface between the rear passivation layer and a boron-doped region of the silicon substrate, the rear p+ diffusion area surrounding the rear metal electrode.Type: GrantFiled: November 28, 2012Date of Patent: November 25, 2014Inventors: Karim Lofti Bendimerad, Daniel Aneurin Inns, Dmitry Poplavskyy
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Publication number: 20140065764Abstract: A method for manufacturing a photovoltaic cell with a locally diffused rear side, comprising steps of: (a) providing a doped silicon substrate, the substrate comprising a front, sunward facing, surface and a rear surface; (b) forming a silicon dioxide layer on the front surface and the rear surface; (c) depositing a boron-containing doping paste on the rear surface in a pattern, the boron-containing paste comprising a boron compound and a solvent; (d) depositing a phosphorus-containing doping paste on the rear surface in a pattern, the phosphorus-containing doping paste comprising a phosphorus compound and a solvent; (e) heating the silicon substrate in an ambient to a first temperature and for a first time period in order to locally diffuse boron and phosphorus into the rear surface of the silicon substrate.Type: ApplicationFiled: September 4, 2012Publication date: March 6, 2014Applicant: INNOVALIGHT INCInventors: Giuseppe Scardera, Maxim Kelman, Elena V. Rogojina, Dmitry Poplavskyy, Elizabeth Tai, Gonghou Wang
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Patent number: 8420517Abstract: A method of forming a multi-doped junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front substrate surface. The method further includes depositing an ink on the front substrate surface in a ink pattern, the ink comprising a set of silicon-containing particles and a set of solvents. The method also includes heating the substrate in a baking ambient to a first temperature and for a first time period in order to create a densified film ink pattern.Type: GrantFiled: February 12, 2010Date of Patent: April 16, 2013Assignee: Innovalight, Inc.Inventors: Giuseppe Scardera, Shihai Kan, Maxim Kelman, Dmitry Poplavskyy