Patents by Inventor Dmitry Poplavskyy

Dmitry Poplavskyy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180331248
    Abstract: A method of making a semiconductor device includes forming a semiconductor material stack having a sodium at an atomic concentration greater than 1×1019/cm3, depositing a transparent conductive oxide layer over the semiconductor material stack, such that sodium atoms diffuse from the semiconductor material stack into the transparent conductive oxide layer, and contacting a physically exposed surface of the transparent conductive oxide layer with a fluid to remove sodium from the transparent conductive oxide layer.
    Type: Application
    Filed: July 25, 2018
    Publication date: November 15, 2018
    Inventor: Dmitry Poplavskyy
  • Patent number: 10062801
    Abstract: A method of making a semiconductor device includes forming a semiconductor material stack having a sodium at an atomic concentration greater than 1×1019/cm3, depositing a transparent conductive oxide layer over the semiconductor material stack, such that sodium atoms diffuse from the semiconductor material stack into the transparent conductive oxide layer, and contacting a physically exposed surface of the transparent conductive oxide layer with a fluid to remove sodium from the transparent conductive oxide layer.
    Type: Grant
    Filed: April 26, 2017
    Date of Patent: August 28, 2018
    Assignee: BEIJING APOLLO DING RONG SOLAR TECHNOLOGY CO., LTD.
    Inventor: Dmitry Poplavskyy
  • Publication number: 20170317227
    Abstract: A method of making a semiconductor device includes forming a semiconductor material stack having a sodium at an atomic concentration greater than 1×1019/cm3, depositing a transparent conductive oxide layer over the semiconductor material stack, such that sodium atoms diffuse from the semiconductor material stack into the transparent conductive oxide layer, and contacting a physically exposed surface of the transparent conductive oxide layer with a fluid to remove sodium from the transparent conductive oxide layer.
    Type: Application
    Filed: April 26, 2017
    Publication date: November 2, 2017
    Inventor: Dmitry POPLAVSKYY
  • Patent number: 9496136
    Abstract: A silicon nanoparticle fluid including a) a set of silicon nanoparticles present in an amount of between about 1 wt % and about 20 wt % of the silicon nanoparticie fluid; b) a set of HMW binder molecules present in an amount of between about 0 wt % and about 10 wt % of the silicon nanoparticle fluid; and c) a set of capping agent molecules, such that at least some capping agent molecules are attached to the set of silicon nanoparticles. Preferably, the silicon nanoparticle fluid is a shear thinning fluid.
    Type: Grant
    Filed: September 24, 2010
    Date of Patent: November 15, 2016
    Assignee: Innovalight, Inc.
    Inventors: Hyungrak Kim, Malcolm Abbott, Andreas Meisel, Elizabeth Tai, Augustus Jones, Dmitry Poplavskyy, Karel Vanheusden
  • Patent number: 9306087
    Abstract: A method for manufacturing a photovoltaic cell with a locally diffused rear side, comprising steps of: (a) providing a doped silicon substrate, the substrate comprising a front, sunward facing, surface and a rear surface; (b) forming a silicon dioxide layer on the front surface and the rear surface; (c) depositing a boron-containing doping paste on the rear surface in a pattern, the boron-containing paste comprising a boron compound and a solvent; (d) depositing a phosphorus-containing doping paste on the rear surface in a pattern, the phosphorus-containing doping paste comprising a phosphorus compound and a solvent; (e) heating the silicon substrate in an ambient to a first temperature and for a first time period in order to locally diffuse boron and phosphorus into the rear surface of the silicon substrate.
    Type: Grant
    Filed: September 4, 2012
    Date of Patent: April 5, 2016
    Assignee: E I DU PONT DE NEMOURS AND COMPANY
    Inventors: Giuseppe Scardera, Maxim Kelman, Elena V Rogojina, Dmitry Poplavskyy, Elizabeth Tai, Gonghou Wang
  • Patent number: 9246029
    Abstract: A method for manufacturing an interdigitated back contact solar cell, comprising steps of: (a) providing a doped silicon substrate; (b) doping the rear surface of the substrate homogeneously with boron in a blanket pattern, thereby forming a p+ region on the rear surface of the silicon substrate; (c) forming a silicon dioxide layer on the front and rear surface; (d) depositing a phosphorus-containing doping paste on the rear surface in a second pattern; (e) heating the silicon substrate to locally diffuse phosphorus into the rear surface of the silicon substrate, thereby forming an n+ region on the rear surface of the silicon substrate through the second pattern, wherein the p+ region and the n+ region on the rear surface collectively form an interdigitated pattern; and (f) removing the second silicon dioxide layer from the silicon substrate.
    Type: Grant
    Filed: February 20, 2015
    Date of Patent: January 26, 2016
    Assignee: E I DU PONT DE NEMOURS AND COMPANY
    Inventors: Giuseppe Scardera, Dmitry Poplavskyy, Daniel Aneurin Inns, Karim Lotfi Bendimerad, Shannon Dugan
  • Publication number: 20150187968
    Abstract: A method for manufacturing an interdigitated back contact solar cell, comprising steps of: (a) providing a doped silicon substrate; (b) doping the rear surface of the substrate homogeneously with boron in a blanket pattern, thereby forming a p+ region on the rear surface of the silicon substrate; (c) forming a silicon dioxide layer on the front and rear surface; (d) depositing a phosphorus-containing doping paste on the rear surface in a second pattern; (e) heating the silicon substrate to locally diffuse phosphorus into the rear surface of the silicon substrate, thereby forming an n+ region on the rear surface of the silicon substrate through the second pattern, wherein the p+ region and the n+ region on the rear surface collectively form an interdigitated pattern; and (f) removing the second silicon dioxide layer from the silicon substrate.
    Type: Application
    Filed: February 20, 2015
    Publication date: July 2, 2015
    Inventors: GIUSEPPE SCARDERA, DMITRY POPLAVSKYY, DANIEL ANEURIN INNS, KARIM LOTFI BENDIMERAD, SHANNON DUGAN
  • Patent number: 9059341
    Abstract: A method for manufacturing an interdigitated back contact solar cell. comprising the steps of: (a) providing a silicon substrate doped with a first dopant; (b) doping the rear surface of the silicon substrate with a second dopant in a first pattern; (c) forming a silicon dioxide layer on the rear surface; (d) depositing a silicon-containing paste comprising silicon-containing particles on the silicon dioxide layer in a second pattern; (e) exposing the substrate to a diffusion ambient, wherein the diffusion ambient comprises a third dopant and wherein the third dopant is a counter dopant to the second dopant; (f) heating the substrate in a drive-in ambient; and (g) removing the silicon dioxide layer and the doped silicate glass layer from the silicon substrate, wherein a region doped with the second dopant and a region doped with the third dopant collectively form an interdigitated pattern on the rear surface of the silicon substrate.
    Type: Grant
    Filed: January 23, 2014
    Date of Patent: June 16, 2015
    Assignee: E I DU PONT DE NEMOURS AND COMPANY
    Inventors: Giuseppe Scardera, Maxim Kelman, Shannon Dugan, Dmitry Poplavskyy, Daniel Aneurin Inns, Karim Lotfi Bendimerad
  • Patent number: 9048374
    Abstract: A method for manufacturing an interdigitated back contact solar cell, comprising steps of: (a) providing a doped silicon substrate; (b) forming a first silicon dioxide layer on the front surface and the rear surface; (c) depositing a boron-containing doping paste on the first silicon dioxide layer of the rear surface in a first pattern; (d) heating the silicon substrate; (e) removing the first silicon dioxide layer; (f) forming a second silicon dioxide layer on the front surface and the rear surface; (g) depositing a phosphorus-containing doping paste on the second dioxide layer of the rear surface in a second pattern; (h) heating the silicon substrate; and (i) removing the second silicon dioxide layer from the silicon substrate, wherein the first pattern and the second pattern collectively form an interdigitated pattern.
    Type: Grant
    Filed: November 20, 2013
    Date of Patent: June 2, 2015
    Assignee: E I DU PONT DE NEMOURS AND COMPANY
    Inventors: Giuseppe Scardera, Dmitry Poplavskyy, Daniel Aneurin Inns, Karim Lotfi Bendimerad, Shannon Dugan
  • Publication number: 20150140725
    Abstract: A method for manufacturing an interdigitated back contact solar cell, comprising steps of: (a) providing a doped silicon substrate; (b) forming a first silicon dioxide layer on the front surface and the rear surface; (c) depositing a boron-containing doping paste on the first silicon dioxide layer of the rear surface in a first pattern; (d) heating the silicon substrate; (e) removing the first silicon dioxide layer; (f) forming a second silicon dioxide layer on the front surface and the rear surface; (g) depositing a phosphorus-containing doping paste on the second dioxide layer of the rear surface in a second pattern; (h) heating the silicon substrate; and (i) removing the second silicon dioxide layer from the silicon substrate, wherein the first pattern and the second pattern collectively form an interdigitated pattern.
    Type: Application
    Filed: November 20, 2013
    Publication date: May 21, 2015
    Applicant: E I DU PONT DE NEMOURS AND COMPANY
    Inventors: GIUSEPPE SCARDERA, Dmitry Poplavskyy, Daniel Aneurin Inns, Karim Lotfi Bendimerad, Shannon Dugan
  • Publication number: 20150053256
    Abstract: A method of making a solar cell may include depositing in a first pattern a first ink comprising a first dopant on a back surface of a substrate that is doped with a second dopant being of the same type as the first dopant; then, depositing a second ink comprising a set of undoped semiconductor nanoparticles over the first ink on the back surface of the substrate in a second pattern matching the first pattern; then, heating the semiconductor substrate so that the first dopant diffuses into the substrate and thereby, forms a third pattern of localized doped regions; then, exposing the substrate to a doping ambient comprising a third dopant being of the opposite type to the second dopant, thereby forming a doped semiconductor layer on the front surface and a portion of the back surface not covered by the second ink, and then, removing the deposited ink.
    Type: Application
    Filed: August 26, 2013
    Publication date: February 26, 2015
    Applicant: E I DU PONT DE NEMOURS AND COMPANY
    Inventors: DMITRY POPLAVSKYY, Giuseppe Scardera, Karim Lotfi Bendimerad, Daniel Aneurin Inns
  • Patent number: 8895348
    Abstract: A solar cell, comprising: a doped silicon substrate, the silicon substrate comprising a front surface and a rear surface; a front phosphorous diffusion layer formed on the front surface; a front anti-reflective layer formed on the front phosphorous diffusion layer; a front metal electrode on the front surface in ohmic contact with the front phosphorous diffusion layer through the front anti-reflective layer; a rear passivation layer formed on the rear surface; a rear metal electrode in a pattern on the rear surface passing through the rear passivation layer; and a rear p+ diffusion area on the rear surface between the rear passivation layer and a boron-doped region of the silicon substrate, the rear p+ diffusion area surrounding the rear metal electrode.
    Type: Grant
    Filed: November 28, 2012
    Date of Patent: November 25, 2014
    Inventors: Karim Lofti Bendimerad, Daniel Aneurin Inns, Dmitry Poplavskyy
  • Publication number: 20140065764
    Abstract: A method for manufacturing a photovoltaic cell with a locally diffused rear side, comprising steps of: (a) providing a doped silicon substrate, the substrate comprising a front, sunward facing, surface and a rear surface; (b) forming a silicon dioxide layer on the front surface and the rear surface; (c) depositing a boron-containing doping paste on the rear surface in a pattern, the boron-containing paste comprising a boron compound and a solvent; (d) depositing a phosphorus-containing doping paste on the rear surface in a pattern, the phosphorus-containing doping paste comprising a phosphorus compound and a solvent; (e) heating the silicon substrate in an ambient to a first temperature and for a first time period in order to locally diffuse boron and phosphorus into the rear surface of the silicon substrate.
    Type: Application
    Filed: September 4, 2012
    Publication date: March 6, 2014
    Applicant: INNOVALIGHT INC
    Inventors: Giuseppe Scardera, Maxim Kelman, Elena V. Rogojina, Dmitry Poplavskyy, Elizabeth Tai, Gonghou Wang
  • Patent number: 8420517
    Abstract: A method of forming a multi-doped junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front substrate surface. The method further includes depositing an ink on the front substrate surface in a ink pattern, the ink comprising a set of silicon-containing particles and a set of solvents. The method also includes heating the substrate in a baking ambient to a first temperature and for a first time period in order to create a densified film ink pattern.
    Type: Grant
    Filed: February 12, 2010
    Date of Patent: April 16, 2013
    Assignee: Innovalight, Inc.
    Inventors: Giuseppe Scardera, Shihai Kan, Maxim Kelman, Dmitry Poplavskyy
  • Patent number: 8394658
    Abstract: Disclosed are methods of forming multi-doped junctions, which utilize a nanoparticle ink to form an ink pattern on a surface of a substrate. From the ink pattern, a densified film ink pattern can be formed. The disclosed methods may allow in situ controlling of dopant diffusion profiles.
    Type: Grant
    Filed: September 21, 2011
    Date of Patent: March 12, 2013
    Assignee: Innovalight, Inc.
    Inventors: Giuseppe Scardera, Dmitry Poplavskyy, Michael Burrows, Sunil Shah
  • Patent number: 8361834
    Abstract: A method of forming an ohmic contact on a substrate is described. The method includes depositing a set of silicon particles on the substrate surface. The method also includes heating the substrate in a baking ambient to a baking temperature and for a baking time period in order to create a densified film ink pattern. The method further includes exposing the substrate to a dopant source in a diffusion furnace with a deposition ambient, the deposition ambient comprising POCl3, a carrier N2 gas, a main N2 gas, and a reactive O2 gas at a deposition temperature and for a deposition time period, wherein a PSG layer is formed on the substrate surface. The method also includes heating the substrate in a drive-in ambient to a drive-in temperature and for a drive-in time period; and depositing a silicon nitride layer. The method further includes depositing a set of metal contacts on the set of silicon particles; and heating the substrate to a firing temperature and for a firing time period.
    Type: Grant
    Filed: March 1, 2010
    Date of Patent: January 29, 2013
    Assignee: Innovalight, Inc.
    Inventors: Dmitry Poplavskyy, Malcolm Abbott
  • Patent number: 8273669
    Abstract: A method for forming a passivated densified nanoparticle thin film on a substrate in a chamber is disclosed. The method includes depositing a nanoparticle ink on a first region on the substrate, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 400° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed. The method further includes flowing an oxidizer gas into the chamber; and heating the porous compact to a second temperature between about 600° C. and about 1000° C., and for a second time period of between about 5 seconds and about 1 hour; wherein the passivated densified nanoparticle thin film is formed.
    Type: Grant
    Filed: November 4, 2010
    Date of Patent: September 25, 2012
    Assignee: Innovalight, Inc.
    Inventors: Dmitry Poplavskyy, Maxim Kelman, Mason Terry
  • Patent number: 8163587
    Abstract: A method of forming a multi-doped junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front substrate surface, and depositing an ink on the front substrate surface in an ink pattern, the ink comprising a set of nanoparticles and a set of solvents. The method further includes heating the substrate in a baking ambient to a first temperature of between about 200° C. and about 800° C. and for a first time period of between about 3 minutes and about 20 minutes in order to create a densified film ink pattern. The method also includes exposing the substrate to a dopant source in a diffusion furnace with a deposition ambient, the deposition ambient comprising POCl3, a carrier N2 gas, a main N2 gas, and a reactive O2 gas, wherein a ratio of the carrier N2 gas to the reactive O2 gas is between about 1:1 to about 1.5:1, at a second temperature of between about 700° C. and about 1000° C.
    Type: Grant
    Filed: July 21, 2009
    Date of Patent: April 24, 2012
    Assignee: Innovalight, Inc.
    Inventors: Giuseppe Scardera, Dmitry Poplavskyy, Michael Burrows, Sunil Shah
  • Patent number: 8138070
    Abstract: A method of forming a multi-doped junction is disclosed. The method includes providing a first substrate and a second substrate. The method also includes depositing a first ink on a first surface of each of the first substrate and the second substrate, the first ink containing a first set of nanoparticles and a first set of solvents, the first set of nanoparticles containing a first concentration of a first dopant. The method further includes depositing a second ink on a second surface of each of the first substrate and the second substrate, the second ink containing a second set of nanoparticles and a second set of solvents, the second set of nanoparticles containing a second concentration of a second dopant. The method also includes placing the first substrate and the second substrate in a back to back configuration; and heating the first substrate and the second substrate in a first drive-in ambient to a first temperature and for a first time period.
    Type: Grant
    Filed: November 25, 2009
    Date of Patent: March 20, 2012
    Assignee: Innovalight, Inc.
    Inventors: Maxim Kelman, Michael Burrows, Dmitry Poplavskyy, Giuseppe Scardera, Daniel Kray, Elena Rogojina
  • Publication number: 20120052665
    Abstract: Disclosed are methods of forming multi-doped junctions, which utilize a nanoparticle ink to form an ink pattern on a surface of a substrate. From the ink pattern, a densified film ink pattern can be formed. The disclosed methods may allow in situ controlling of dopant diffusion profiles.
    Type: Application
    Filed: September 21, 2011
    Publication date: March 1, 2012
    Inventors: Giuseppe Scardera, Dmitry Poplavskyy, Michael Burrows, Sunil Shah