Patents by Inventor Dnyanesh C. Tamboli

Dnyanesh C. Tamboli has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Post Chemical Mechanical Planarization (CMP) Cleaning
    Publication number: 20230183611
    Abstract: Provided are formulations that offer a high cleaning effect on inorganic particles, organic residues, chemical residues, reaction products on the surface due to interaction of the wafer surface with the Chemical Mechanical Planarization (CMP) slurry and elevated levels of undesirable metals on the surface left on the semiconductor devices after the CMP. The post-CMP cleaning formulations comprise one or more organic acid, one or more polymer and a fluoride compound with pH<7 and optionally a surfactant with two sulfonic acid groups.
    Type: Application
    Filed: December 15, 2022
    Publication date: June 15, 2023
    Inventor: Dnyanesh C. Tamboli
  • Post chemical mechanical planarization (CMP) cleaning
    Patent number: 11560533
    Abstract: Provided are formulations that offer a high cleaning effect on inorganic particles, organic residues, chemical residues, reaction products on the surface due to interaction of the wafer surface with the Chemical Mechanical Planarization (CMP) slurry and elevated levels of undesirable metals on the surface left on the semiconductor devices after the CMP. The post-CMP cleaning formulations comprise one or more organic acid, one or more polymer and a fluoride compound with pH<7 and optionally a surfactant with two sulfonic acid groups.
    Type: Grant
    Filed: June 18, 2019
    Date of Patent: January 24, 2023
    Assignee: VERSUM MATERIALS US, LLC
    Inventor: Dnyanesh C. Tamboli
  • Post Chemical Mechanical Planarization (CMP) Cleaning
    Publication number: 20190390139
    Abstract: Provided are formulations that offer a high cleaning effect on inorganic particles, organic residues, chemical residues, reaction products on the surface due to interaction of the wafer surface with the Chemical Mechanical Planarization (CMP) slurry and elevated levels of undesirable metals on the surface left on the semiconductor devices after the CMP. The post-CMP cleaning formulations comprise one or more organic acid, one or more polymer and a fluoride compound with pH<7 and optionally a surfactant with two sulfonic acid groups.
    Type: Application
    Filed: June 18, 2019
    Publication date: December 26, 2019
    Applicant: Versum Materials US, LLC
    Inventor: Dnyanesh C. Tamboli