Abstract: This invention pertains to slurries, methods and systems that can be used in chemical mechanical planarization (CMP) of tungsten containing semiconductor device. Using the CMP slurries with additives to counter lowering of pH by tungsten polishing byproducts and maintain pH 4 or higher, the erosion of dense metal (such as tungsten) structures can be greatly diminished.

Abstract: Present invention provides Chemical Mechanical Planarization (CMP) polishing compositions for barrier layer applications, specifically for improving With-In Die Non-Uniformities (WID-NU). The CMP polishing compositions contain abrasive at a concentration equal and/or greater than (·) 2.0 wt. %; a planarization agent selected from the group consisting of ethylene oxide, propylene oxide, butylene oxide, polymers thereof, derivatives thereof, and combinations thereof, wherein the polymers have a molecular weight between 10 Dalton to 5 million Dalton, preferably 50 Dalton to 1 million Dalton; corrosion inhibitor; water soluble solvent; and optionally, rate boosting agent, pH adjusting agent, oxidizing agent, and chelator.

Abstract: Chemical Mechanical Planarization (CMP) polishing compositions comprising abrasive particles and additives to boost removal rates of films comprising elemental silicon such as poly-silicon and Silicon-Germanium.

Abstract: Composite particles with lower mean particle size and smaller size distribution are obtained through refining treatments. The refined composite particles, such as ceria coated silica particles are used in Chemical Mechanical Planarization (CMP) compositions to offer higher removal rate; very low within wafer (WWNU) for removal rate, low dishing and low defects for polishing oxide films.

Abstract: Chemical Mechanical Planarization (CMP) polishing compositions comprising composite particles, such as ceria coated silica particles, offer low dishing, low defects, and high removal rate for polishing oxide films. Chemical Mechanical Planarization (CMP) polishing compositions have shown excellent performance using soft polishing pad.

Abstract: Chemical Mechanical Planarization (CMP) polishing compositions comprising composite particles, such as ceria coated silica particles, offer low dishing, low defects, and high removal rate for polishing oxide films. Chemical Mechanical Planarization (CMP) polishing compositions have shown excellent performance using soft polishing pad.

Abstract: Chemical Mechanical Planarization (CMP) polishing compositions comprising abrasive particles and additives to boost removal rates of films comprising elemental silicon such as poly-silicon and Silicon-Germanium.

Abstract: This invention pertains to slurries, methods and systems that can be used in chemical mechanical planarization (CMP) of tungsten containing semiconductor device. Using the CMP slurries with additives to counter lowering of pH by tungsten polishing byproducts and maintain pH 4 or higher, the erosion of dense metal (such as tungsten) structures can be greatly diminished.

Abstract: Composite particles with lower mean particle size and smaller size distribution are obtained through refining treatments. The refined composite particles, such as ceria coated silica particles are used in Chemical Mechanical Planarization (CMP) compositions to offer higher removal rate; very low within wafer (WWNU) for removal rate, low dishing and low defects for polishing oxide films.

Abstract: Composite particles with lower mean particle size and smaller size distribution are obtained through refining treatments. The refined composite particles, such as ceria coated silica particles are used in Chemical Mechanical Planarization (CMP) compositions to offer higher removal rate; very low within wafer (WWNU) for removal rate, low dishing and low defects for polishing oxide films.

Abstract: Polishing compositions comprising ceria coated silica particles offer minimal topography, reduced oxide and nitride losses, while providing high oxide polish rates. These formulations are especially useful for polishing large structures typically used in 3D NAND device manufacturing.

Abstract: Compositions for use in CMP processing and methods of CMP processing. The composition utilizes low levels of particulate material, in combination with at least one amino acid, at least one oxidizer, and water to remove a metal layer such as one containing copper to a stop layer with high selectivity.

Abstract: A barrier chemical mechanical planarization polishing composition is provided that includes suitable chemical additives. The suitable chemical additives are silicate compound and high molecular weight polymers/copolymers. There is also provided a chemical mechanical polishing method using the barrier chemical mechanical planarization polishing composition.

Abstract: Chemical Mechanical Planarization (CMP) polishing compositions comprising composite particles, such as ceria coated silica particles, offer low dishing, low defects, and high removal rate for polishing oxide films. Chemical Mechanical Planarization (CMP) polishing compositions have shown excellent performance using soft polishing pad.

Abstract: Chemical Mechanical Planarization (CMP) polishing compositions comprising abrasive particles and additives to boost removal rates of films comprising elemental silicon such as poly-silicon and Silicon-Germanium.

Abstract: Chemical Mechanical Planarization (CMP) polishing compositions comprising composite particles, such as ceria coated silica particles, offer tunable polishing removal selectivity values between different films. Compositions enable high removal rates on interconnect metal and the silicon oxide dielectric while providing a polish stop on low-K dielectrics, a-Si and tungsten films. Chemical Mechanical Planarization (CMP) polishing compositions have shown excellent performance using soft polishing pad.

Abstract: A barrier chemical mechanical planarization polishing composition is provided that includes suitable chemical additives. The suitable chemical additives are silicate compound and high molecular weight polymers/copolymers. There is also provided a chemical mechanical polishing method using the barrier chemical mechanical planarization polishing composition.

Abstract: Compositions for use in CMP processing and methods of CMP processing. The composition utilizes low levels of particulate material, in combination with at least one amino acid, at least one oxidizer, and water to remove a metal layer such as one containing copper to a stop layer with high selectivity.

Abstract: Composite particles with lower mean particle size and smaller size distribution are obtained through refining treatments. The refined composite particles, such as ceria coated silica particles are used in Chemical Mechanical Planarization (CMP) compositions to offer higher removal rate; very low within wafer (WWNU) for removal rate, low dishing and low defects for polishing oxide films.

Abstract: Polishing compositions comprising ceria coated silica particles offer minimal topography, reduced oxide and nitride losses, while providing high oxide polish rates. These formulations are especially useful for polishing large structures typically used in 3D NAND device manufacturing.