Abstract: A quantum dot preparing method according to an embodiment of the present invention comprises the steps of: preparing a first solution containing at least one first cation precursor and a second solution containing at least one first anion precursor; mixing the first solution and the second solution at 20° C. to 130° C. to prepare a first mixture; raising the temperature of the first mixture to a high temperature of 300° C. within 1 minute; and cooling the first mixture, of which the temperature is raised, to 100° C. or lower within 1 minute, thereby forming a core, wherein the first cation precursor includes an indium oxo cluster (In-Oxocluster).

Abstract: A quantum dot sheet includes quantum dots, light scattering agents and a resin, where the resin includes repeated units represented by the chemical formula using an aryl group of C6-C30, and a substituted or unsubstituted alkyl group of C1-C1000.

Abstract: The present disclosure relates to a quantum dot, a resin, a quantum dot sheet, and a back light unit using the same, and more particularly, to a quantum dot including an inorganic ion ligand, a resin with excellent property of blocking oxygen and moisture, a quantum dot sheet with improved light conversion efficiency, and a back light unit including the same. The quantum dot of the present disclosure includes a core including a semiconductor material; and inorganic ion ligands covering the surface of the core, in which the inorganic ion ligand includes element of a halogen group or chalcogen group.