Abstract: A display device according to an embodiment includes: a first wiring layer disposed on a substrate; a first insulating layer disposed on the first wiring layer and including an inorganic material; a second insulating layer disposed on the first insulating layer, and including an organic material; and a second wiring layer disposed on the second insulating layer and electrically connected to the first wiring layer through a contact hole of the first insulating layer and the second insulating layer. A thickness of the second insulating layer is greater than a thickness of the first insulating layer. The contact hole includes a first sub-contact hole formed in the first insulating layer and a second sub-contact hole formed in the second insulating layer. At least part of at least one edge of the first sub-contact hole is covered with the second insulating layer.

Abstract: An organic light emitting diode display includes: a substrate comprising a red pixel, a green pixel, and a blue pixel arranged in a matrix; a scan line on the substrate and extending in a row direction; a red data line, a green data line, and a blue data line between adjacent pixel columns to cross the scan line; a driving voltage line alternating with the red data line, the green data line, and the blue data line; and a horizontal driving voltage line extending parallel with the scan line and electrically connected to the driving voltage line.

Abstract: An organic light emitting diode display includes: a substrate comprising a red pixel, a green pixel, and a blue pixel arranged in a matrix; a scan line on the substrate and extending in a row direction; a red data line, a green data line, and a blue data line between adjacent pixel columns to cross the scan line; a driving voltage line alternating with the red data line, the green data line, and the blue data line; and a horizontal driving voltage line extending parallel with the scan line and electrically connected to the driving voltage line.

Abstract: A thin film transistor substrate, wherein the moving area of electrons between source and drain electrodes of a thin film transistor (TFT) is minimized, the moving distance of electrons is increased, and the sizes of capacitors defined by a gate electrode together with the respective source and drain electrodes are identical to each other so that an off current generated when the TFT is off can be minimized; a method of manufacturing the thin film transistor substrate; and a mask for manufacturing the thin film transistor substrate. Accordingly, it is possible to minimize an off current induced due to a phenomenon of electron trapping by light.

Abstract: A thin film transistor substrate, wherein the moving area of electrons between source and drain electrodes of a thin film transistor (TFT) is minimized, the moving distance of electrons is increased, and the sizes of capacitors defined by a gate electrode together with the respective source and drain electrodes are identical to each other so that an off current generated when the TFT is off can be minimized; a method of manufacturing the thin film transistor substrate; and a mask for manufacturing the thin film transistor substrate. Accordingly, it is possible to minimize an off current induced due to a phenomenon of electron trapping by light.

Abstract: A thin film transistor array panel comprising: an insulating substrate; gate lines formed on the insulating substrate; data lines defining a display region by intersecting the gate lines while being insulated; an electrostatic dispersion line intersecting the gate lines; diodes adhered to the gate lines and to the electrostatic dispersion line; and a repair line for repairing the data lines formed on the insulating substrate outside the display region and intersecting the electrostatic dispersion line while being insulated. According to the present invention, since static electricity flowing along the repair line is not transferred to the data lines, defects of a thin film transistor of the display region may be prevented.

Abstract: A thin film transistor substrate, wherein the moving area of electrons between source and drain electrodes of a thin film transistor (TFT) is minimized, the moving distance of electrons is increased, and the sizes of capacitors defined by a gate electrode together with the respective source and drain electrodes are identical to each other so that an off current generated when the TFT is off can be minimized; a method of manufacturing the thin film transistor substrate; and a mask for manufacturing the thin film transistor substrate. Accordingly, it is possible to minimize an off current induced due to a phenomenon of electron trapping by light.

Abstract: A thin film transistor array panel comprising: an insulating substrate; gate lines formed on the insulating substrate; data lines defining a display region by intersecting the gate lines while being insulated; an electrostatic dispersion line intersecting the gate lines; diodes adhered to the gate lines and to the electrostatic dispersion line; and a repair line for repairing the data lines formed on the insulating substrate outside the display region and intersecting the electrostatic dispersion line while being insulated. According to the present invention, since static electricity flowing along the repair line is not transferred to the data lines, defects of a thin film transistor of the display region may be prevented.

Abstract: A thin film transistor array panel comprising: an insulating substrate; gate lines formed on the insulating substrate; data lines defining a display region by intersecting the gate lines while being insulated; an electrostatic dispersion line intersecting the gate lines; diodes adhered to the gate lines and to the electrostatic dispersion line; and a repair line for repairing the data lines formed on the insulating substrate outside the display region and intersecting the electrostatic dispersion line while being insulated. According to the present invention, since static electricity flowing along the repair line is not transferred to the data lines, defects of a thin film transistor of the display region may be prevented.

Abstract: A thin film transistor substrate, wherein the moving area of electrons between source and drain electrodes of a thin film transistor (TFT) is minimized, the moving distance of electrons is increased, and the sizes of capacitors defined by a gate electrode together with the respective source and drain electrodes are identical to each other so that an off current generated when the TFT is off can be minimized; a method of manufacturing the thin film transistor substrate; and a mask for manufacturing the thin film transistor substrate. Accordingly, it is possible to minimize an off current induced due to a phenomenon of electron trapping by light.

Abstract: The present invention relates to a display device, and more particularly to a display device in which gate lines and a main gate driver can be repaired. The display device includes a plurality of pixels respectively including a switching element, a gate line connected to the switching element, and first and second gate drivers respectively including a plurality of stages that are interconnected and sequentially generate output signals. Any one of the stages of the first gate driver and any one of the stages of the second gate driver are connected to the same gate line. In this manner, gate drivers that generate the same output are disposed in one gate line on the left and right sides. It is therefore possible to repair disconnected gate lines without using a laser.

Abstract: A shift register invention includes a plurality of stages outputting a plurality of output signals, in sequence. Each of the stages includes a driving part and a discharging part. The driving part includes a driving transistor. The driving transistor has a control electrode, a first electrode, a second electrode and a channel layer. The control electrode receives one of a start signal or an output signal of a previous stage. The first electrode receives a clock signal. The second electrode outputs an output signal of a present stage. The channel layer has a different length from a channel layer of a driving transistor of the previous stage. The discharging part discharges the output signal of the present stage based on an output signal of a next stage, therefore improving the electrical characteristics of the shift register.

Abstract: A thin film transistor array panel comprising: an insulating substrate; gate lines formed on the insulating substrate; data lines defining a display region by intersecting the gate lines while being insulated; an electrostatic dispersion line intersecting the gate lines; diodes adhered to the gate lines and to the electrostatic dispersion line; and a repair line for repairing the data lines formed on the insulating substrate outside the display region and intersecting the electrostatic dispersion line while being insulated. According to the present invention, since static electricity flowing along the repair line is not transferred to the data lines, defects of a thin film transistor of the display region may be prevented.