Abstract: A storage device including a nonvolatile memory device that includes a nonvolatile memory cell array including a string including first and second memory cells stacked sequentially, and an OTP memory cell array that stores reference count values, the first and second memory cells respectively connected to first and second word lines; a controller including a processor that generates a read command for the first memory cell; a read level generator including a counter that receives the read command and calculates an off-cell count value of memory cells connected to the second word line, and a comparator that receives a first reference count value from the OTP memory cell array, compares the off-cell count value with the first reference count value to determine a threshold voltage shift of the second memory cell, and determines a read level of the first memory cell based on the threshold voltage shift.

Abstract: A display device comprises a first pixel including a first emission area, a second pixel including a second emission area spaced apart from the first emission area in a first direction, and a bank partitioning the first emission area and the second emission area, wherein the first pixel includes a first alignment electrode, a second alignment electrode, and a third alignment electrode sequentially located, spaced apart from each other in the first direction, and overlapping with the first emission area, first light-emitting elements above, and overlapping with, the first alignment electrode and the second alignment electrode, second light-emitting elements above, and overlapping with, the second alignment electrode and the third alignment electrode, and a dummy electrode between the first emission area and the second emission area, and overlapping with the bank.

Abstract: A storage device including a nonvolatile memory device that includes a nonvolatile memory cell array including a string including first and second memory cells stacked sequentially, and an OTP memory cell array that stores reference count values, the first and second memory cells respectively connected to first and second word lines; a controller including a processor that generates a read command for the first memory cell; a read level generator including a counter that receives the read command and calculates an off-cell count value of memory cells connected to the second word line, and a comparator that receives a first reference count value from the OTP memory cell array, compares the off-cell count value with the first reference count value to determine a threshold voltage shift of the second memory cell, and determines a read level of the first memory cell based on the threshold voltage shift.

Abstract: A storage device including a nonvolatile memory device that includes a nonvolatile memory cell array including a string including first and second memory cells stacked sequentially, and an OTP memory cell array that stores reference count values, the first and second memory cells respectively connected to first and second word lines; a controller including a processor that generates a read command for the first memory cell; a read level generator including a counter that receives the read command and calculates an off-cell count value of memory cells connected to the second word line, and a comparator that receives a first reference count value from the OTP memory cell array, compares the off-cell count value with the first reference count value to determine a threshold voltage shift of the second memory cell, and determines a read level of the first memory cell based on the threshold voltage shift.

Abstract: A storage device including a nonvolatile memory device that includes a nonvolatile memory cell array including a string including first and second memory cells stacked sequentially, and an OTP memory cell array that stores reference count values, the first and second memory cells respectively connected to first and second word lines; a controller including a processor that generates a read command for the first memory cell; a read level generator including a counter that receives the read command and calculates an off-cell count value of memory cells connected to the second word line, and a comparator that receives a first reference count value from the OTP memory cell array, compares the off-cell count value with the first reference count value to determine a threshold voltage shift of the second memory cell, and determines a read level of the first memory cell based on the threshold voltage shift.

Abstract: Disclosed are a fermented ginseng berry Pleurotus ferulae product and a cosmetic composition containing the same. The fermented ginseng berry Pleurotus ferulae product is useful for anti-oxidation, anti-inflammation, collagen synthesis facilitation, skin wrinkle care, whitening, moisturizing, skin barrier improvement and atopy alleviation.

Abstract: Disclosed are a fermented ginseng berry Pleurotus ferulae product and a cosmetic composition containing the same. The fermented ginseng berry Pleurotus ferulae product is useful for anti-oxidation, anti-inflammation, collagen synthesis facilitation, skin wrinkle care, whitening, moisturizing, skin barrier improvement and atopy alleviation.

Abstract: Disclosed is a composition for skin external application containing a Pleurotus ferulae fruiting body extract, a Pleurotus ferulae mycelium extract or a liquid culture obtained by culturing the Pleurotus ferulae mycelium. More specifically, disclosed is a functional composition for skin external application containing 0.001 to 90.0% by weight of a Pleurotus ferulae fruiting body extract, a Pleurotus ferulae mycelium extract or a liquid culture obtained by culturing the Pleurotus ferulae mycelium, with respect to the weight of the composition, wherein the composition is potently effective in scavenging active oxygen, preventing aging, acting wrinkles, facilitating collagen synthesis, moisturizing skin, whitening skin, reducing skin irritation, preventing acne, alleviating atopy, providing anti-inflammation, preventing hair damage, preventing alopecia and improving hair growth.

Abstract: Disclosed are a fermented ginseng berry Pleurotus ferulae product and a cosmetic composition containing the same. The fermented ginseng berry Pleurotus ferulae product is useful for anti-oxidation, anti-inflammation, collagen synthesis facilitation, skin wrinkle care, whitening, moisturizing, skin barrier improvement and atopy alleviation.