Patents by Inventor Do-Heyoung Kim

Do-Heyoung Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11434566
    Abstract: An ALD or digital CVD apparatus and method for microparticles are proposed. The apparatus and the method use an impact, which is caused by the pulsed introduction of a precursor or a purging gas to be introduced into a reactor, without additional vibration or rotation of the reactor, so as to inhibit the agglomeration of particles to be applied to a surface and enable dispersion to be maximized, thereby enabling each particle to be uniformly applied, and simultaneously preventing the loss, in the reactor during processing, of powder to be coated without an additional separate filter or filler. A deposition reactor has a structure in which at least two overlapping reactors are provided. A reactant or a purging gas directly flows into an inner reactor in which a chemical reaction occurs. A purging step is simultaneously carried out in inner and outer reactors.
    Type: Grant
    Filed: May 8, 2018
    Date of Patent: September 6, 2022
    Assignee: INDUSTRY FOUNDATION OF CHONNAM NATIONAL UNIVERSITY
    Inventor: Do Heyoung Kim
  • Publication number: 20210002764
    Abstract: An ALD or digital CVD apparatus and method for microparticles are proposed. The apparatus and the method use an impact, which is caused by the pulsed introduction of a precursor or a purging gas to be introduced into a reactor, without additional vibration or rotation of the reactor, so as to inhibit the agglomeration of particles to be applied to a surface and enable dispersion to be maximized, thereby enabling each particle to be uniformly applied, and simultaneously preventing the loss, in the reactor during processing, of powder to be coated without an additional separate filter or filler. A deposition reactor has a structure in which at least two overlapping reactors are provided. A reactant or a purging gas directly flows into an inner reactor in which a chemical reaction occurs. A purging step is simultaneously carried out in inner and outer reactors.
    Type: Application
    Filed: May 8, 2018
    Publication date: January 7, 2021
    Inventor: Do Heyoung KIM
  • Patent number: 6797135
    Abstract: The present invention relates to a method of forming a conductive layer and an electroplating device, and in particular, to a method of forming a conductive layer that provides an electrically-conductive layer having both characteristics of increased adhesiveness to an electroplated body and increased uniformity. The electroplating apparatus and method can produce supersonic waves for electroplating. Thus, the electroplating device can include a wave generator. The electroplating device can further include a plating bath filled with an electrolyte solution that can propagate super sonic waves, a power supply, a plated body connected electrically to a first terminal of the power supply, and a plating body connected electrically to a second terminal of the power supply where the plating body provides ions the same as dissolved in the electrolyte solution to maintain a desired concentration of dissolved ions.
    Type: Grant
    Filed: March 6, 2002
    Date of Patent: September 28, 2004
    Assignee: Hyundai Microelectronics Co., Ltd.
    Inventors: Do-Heyoung Kim, Jae-Jeong Kim, Jae-Hee Ha
  • Publication number: 20020092764
    Abstract: The present invention relates to a method of forming a conductive layer and an electroplating device, and in particular, to a method of forming a conductive layer that provides an electrically-conductive layer having both characteristics of increased adhesiveness to an electroplated body and increased uniformity. The electroplating apparatus and method can produce supersonic waves for electroplating. Thus, the electroplating device can include a wave generator. The electroplating device can further include a plating bath filled with an electrolyte solution that can propagate super sonic waves, a power supply, a plated body connected electrically to a first terminal of the power supply, and a plating body connected electrically to a second terminal of the power supply where the plating body provides ions the same as dissolved in the electrolyte solution to maintain a desired concentration of dissolved ions.
    Type: Application
    Filed: March 6, 2002
    Publication date: July 18, 2002
    Applicant: HYUNDAI MICROELECTRONICS CO., LTD
    Inventors: Do-Heyoung Kim, Jae-Jeong Kim, Jae-Hee Ha
  • Patent number: 6372116
    Abstract: The present invention relates to a method of forming a conductive layer and an electroplating device, and in particular, to a method of forming a conductive layer that provides an electrically-conductive layer having both characteristics of increased adhesiveness to an electroplated body and increased uniformity. The electroplating apparatus and method can produce supersonic waves for electroplating. Thus, the electroplating device can include a wave generator. The electroplating device can further include a plating bath filled with an electrolyte solution that can propagate super sonic waves, a power supply, a plated body connected electrically to a first terminal of the power supply, and a plating body connected electrically to a second terminal of the power supply where the plating body provides ions the same as dissolved in the electrolyte solution to maintain a desired concentration of dissolved ions.
    Type: Grant
    Filed: September 15, 1999
    Date of Patent: April 16, 2002
    Assignee: Hyundai Microelectronics Co., Ltd
    Inventors: Do-Heyoung Kim, Jae-Jeong Kim, Jae-Hee Ha
  • Patent number: 5795796
    Abstract: A method of fabricating a metal line includes the steps of preparing a semiconductor substrate, depositing a first metal on the semiconductor substrate, heat-treating the first metal to form a first metal nitride layer, depositing a second metal on the first metal nitride layer, heat treating the second metal, depositing a third metal on the second metal, and heat treating both the third metal and the second metal to form a metal insulating layer in which the second and the third metals are mixed. The method of fabricating increases the area occupied by the metal line in a contact hole, decreases contact resistance, and increases the speed of the device.
    Type: Grant
    Filed: April 18, 1996
    Date of Patent: August 18, 1998
    Assignee: LG Semicon Co., Ltd.
    Inventor: Do Heyoung Kim