Abstract: The present technology relates to an electronic device. A memory controller that increases a hit ratio of a cache memory includes a memory buffer configured to store command data corresponding to a request received from a host, and a cache memory configured to cache the command data. The cache memory stores the command data by allocating cache lines based on a component that outputs the command data and a flag included in the command data.

Abstract: Disclosed are a memory system, a memory controller, and a method of operating the memory system. The memory system may configure a plurality of map cache pools for caching map data of different types, respectively, within a map cache in which the map data is cached, configure a timer in a first map cache pool among the plurality of map cache pools, and write map data cached in the first map cache pool in the memory device based on the timer.

Abstract: A backlight unit includes a central area and a peripheral area disposed outside the central area, the backlight unit includes a bottom chassis, a plurality of light sources disposed on a surface of the bottom chassis, a reflective layer disposed on the surface of the bottom chassis, where a plurality of light source insertion holes and a plurality of opening patterns are defined through the reflective layer, and a light correction material layer disposed between the bottom chassis and the reflective layer in the peripheral area, where the light source insertion holes expose the light sources, respectively, and the opening patterns are disposed in the peripheral area to expose at least a portion of the light correction material layer in a thickness direction.

Abstract: Disclosed are a carbon substrate for a gas diffusion layer of a fuel cell, a gas diffusion layer employing the same, an electrode for a fuel cell, a membrane electrode assembly for a fuel cell, and a fuel cell, wherein the carbon substrate includes a plate-shaped substrate having an upper surface and a lower surface opposite the upper surface, and the plate-shaped substrate includes carbon fibers arranged to extend in one direction (extend unidirectionally) and a carbide of an organic polymer located between the carbon fibers to bind the carbon fibers to each other.

Abstract: The present technology relates to an electronic device. According to the present technology, a storage device having an improved operation speed may include a nonvolatile memory device, a main memory configured to temporarily store data related to controlling the nonvolatile memory device, and a memory controller configured to control the nonvolatile memory device and the main memory under control of an external host. The main memory may aggregate and process a number of write transactions having continuous addresses, among write transactions received from the memory controller, equal to a burst length unit of the main memory.

Abstract: A data storage device includes a storage medium, a first buffer memory, a second buffer memory, and a controller. The controller is configured to control data input/output for the storage medium according to requests received from a host device and to store write data in the first and second buffer memories in response to a write request received from the host device.

Abstract: There are provided a memory system and an operating method thereof. In a method for operating a memory system, the method includes generating a write request for write data; reading chunk data from a buffer memory in response to the write request; caching the chunk data in a cache memory; generating a read request for read data; and outputting a portion of the cached chunk data as the read data from the cache memory when the read data is included in the cached chunk data.

Abstract: An electronic device includes a memory controller having an improved operation speed. The memory controller includes a main memory, a processor configured to generate commands for accessing data stored in the main memory, a scheduler configured to store the commands and output the commands according to a preset criterion, a cache memory configured to cache and store data accessed by the processor among the data stored in the main memory, and a hazard filter configured to store information on an address of the main memory corresponding to a write command among the commands, provide a pre-completion response for the write command to the scheduler upon receiving the write command, and provide the write command to the main memory.

Abstract: A controller that controls a memory device including a plurality of pages each corresponding to a physical address, the controller may include: a memory suitable for storing a plurality of logical-to-physical (L2P) chunks each indicating mapping between one or more logical addresses and one or more physical addresses and an original valid page bitmap (VPB) indicating whether each of the plurality of pages is a valid page that stores valid data; and a processor suitable for generating a reconstructed VPB based on normal L2P chunks when an corrupted L2P chunk is detected, detecting pages having different states in the original VPB and the reconstructed VPB, obtaining logical addresses mapped to physical addresses of the detected pages, respectively, and recovering the corrupted L2P chunk based on the physical addresses of the detected pages and the obtained logical addresses.

Abstract: There are provided a memory system and an operating method thereof. The memory system includes: a memory device for storing data in a program operation, and reading stored data and temporarily store the read data in a read operation; and a controller for transmitting data to the memory device, wherein the controller includes: a flash direct memory access (DMA) for reading and outputting the data temporarily stored in the memory device in the read operation; a buffer memory for storing the data output from the flash DMA; and a host DMA for reading the data stored in the buffer memory and outputting the read data to a host, wherein a first operation of storing the data temporarily stored in the memory device in the buffer memory and a second operation of outputting the data stored in the buffer memory to the host are performed in parallel.

Abstract: A storage device having improved operation speed may include a main memory configured to store first to N-th meta data, a cache memory including first to N-th dedicated areas respectively corresponding to areas in which the first to N-th meta data are stored, and a processor configured to store data accessed according to requests provided from a host among the first to N-th meta data in the first to N-th dedicated areas, respectively. A size of the first to N-th dedicated areas may be determined according to the number of times each of the first to N-th meta data is accessed by the requests.

Abstract: A memory controller includes a buffer memory configured to store first meta data and second meta data having a different type from the first meta data, and a cache memory including first and second dedicated areas. The first meta data is cached in the first dedicated area and the second meta data is cached in the second dedicated area.

Abstract: A memory system includes a memory device, a write buffer for buffering first and second host data, a chip-kill cache for caching one among first and second chip-kill parity candidates for the first and second host data, respectively, a chip-kill buffer having a smaller bandwidth and a larger capacity than the chip-kill cache; a chip-kill manager for generating a first chip-kill parity by performing an XOR operation on the first host data and the first chip-kill parity candidate, and generating a second chip-kill parity by performing an XOR operation on the second host data and the second chip-kill parity candidate, and a processor for controlling the memory device to program the first host data and the first chip-kill parity into a first open block and to program the second host data and the second chip-kill parity into a second open block.

Abstract: A memory system includes a memory device including a plurality of segments; a processor configured to generate a Read-Modify-Write (RMW) command on a target segment address corresponding to a target segment among the plurality of segments; a scheduler configured to receive the RMW command from the processor and schedule the RMW command; and a RMW unit configured to execute the RMW command on the memory device according to control of the scheduler, wherein the scheduler compares, when a plurality of RMW commands received from the processor are pending, target segment addresses of the plurality of RMW commands to re-order the plurality of RMW commands.

Abstract: A controller includes an Error Correction Code (ECC) encoder adding a first parity to data to generate a data set, and encoding the data set to generate a first parity data set, a buffer temporarily storing the first parity data set, an ECC decoder decoding the first parity data set received from the buffer to generate a decoded data set, a first checker performing a Low Density Parity Check (LDPC) encoding on the decoded data set to generate an LDPC data set to which a second parity is added, and a second checker performing a syndrome check operation on the LDCP data set including the first and second parities.

Abstract: A controller includes an Error Correction Code (ECC) encoder adding a first parity to data to generate a data set, and encoding the data set to generate a first parity data set, a buffer temporarily storing the first parity data set, an ECC decoder decoding the first parity data set received from the buffer to generate a decoded data set, a first checker performing a Low Density Parity Check (LDPC) encoding on the decoded data set to generate an LDPC data set to which a second parity is added, and a second checker performing a syndrome check operation on the LDCP data set including the first and second parities.

Abstract: A memory controller includes a cache memory, a host control circuit, and a flash translation layer. The host control circuit receives a read command and a logical address from a host, reads out mapping information corresponding to the logical address from a buffer memory device, and caches the mapping information in the cache memory. The flash translation layer reads a physical address corresponding to the logical address from the mapping information cached in the cache memory.

Abstract: A backlight unit includes a central area and a peripheral area disposed outside the central area, the backlight unit includes a bottom chassis, a plurality of light sources disposed on a surface of the bottom chassis, a reflective layer disposed on the surface of the bottom chassis, where a plurality of light source insertion holes and a plurality of opening patterns are defined through the reflective layer, and a light correction material layer disposed between the bottom chassis and the reflective layer in the peripheral area, where the light source insertion holes expose the light sources, respectively, and the opening patterns are disposed in the peripheral area to expose at least a portion of the light correction material layer in a thickness direction.

Abstract: A memory system includes a nonvolatile memory device, a buffer memory device storing logical-physical address mapping information, and a memory controller controlling operations of the nonvolatile and buffer memory devices. The memory controller comprises a cache memory, a host control circuit, a flash translation section, and a flash control circuit. The host control circuit receives a read command and a read logical address from a host, reads mapping information corresponding to the read logical address from the buffer memory device, and caches the mapping information in the cache memory, the mapping information corresponding to the logical-physical address mapping information stored in the buffer memory device. The flash translation section reads a read physical address mapped to the read logical address from the mapping information. The flash control circuit reads data corresponding to the read command from the nonvolatile memory device based on the read physical address.

Abstract: An electronic device includes a memory controller having an improved operation speed. The memory controller includes a processor configured to generate commands for accessing data stored in a main memory, a scheduling circuit configured to store the commands and output the commands according to a preset criterion, and a filtering circuit configured to store information on an address of the main memory corresponding to a write command among the commands, provide a pre-completion response for the write command to the scheduling circuit upon receiving the write command, and provide the write command to the main memory.