Abstract: A plasma processing apparatus comprising: a process chamber for defining a plasma processing space in which a substrate holder for mounting a substrate thereon is installed; a plasma chamber in communication with an upper portion of the process chamber to generate and inject plasma into the plasma processing space such that the substrate is processed; a screen interposed between the process chamber and the plasma chamber to block plasma ions from being injected from the plasma chamber; and an ion trap for protecting the surface of the substrate from damage due to the injected plasma ion.

Abstract: A plasma processing apparatus comprising: a process chamber for defining a plasma processing space in which a substrate holder for mounting a substrate thereon is installed; a plasma chamber in communication with an upper portion of the process chamber to generate and inject plasma into the plasma processing space such that the substrate is processed; a screen interposed between the process chamber and the plasma chamber to block plasma ions from being injected from the plasma chamber; and an ion trap for protecting the surface of the substrate from damage due to the injected plasma ion.

Abstract: A plasma etch apparatus is disclosed. The plasma etch apparatus includes an electrostatic chuck for loading a wafer; an insulation portion surrounding the electrostatic chuck; and a focus ring disposed on the electrostatic chuck and the insulation portion. The focus ring has a concave-convex configuration.

Abstract: A multiple reaction chamber system includes a transfer chamber, a load lock chamber connected to the transfer chamber, and a plurality of reaction chambers connected to the transfer chamber. An alignment chamber is connected to the transfer chamber, disposed along a path of wafer transfer from the load lock chamber to the plurality of reaction chambers, and includes a wafer aligner. A wafer recognition, disposed along a post-aligner portion of the path of wafer transfer system, recognizes an identification code of an individual wafer. A controlling system is in data communication with the wafer recognition system for selecting a selected chamber of the plurality of reaction chambers into which the individual wafer is to be transferred. Because individual wafers can be associated with each reaction chamber, a defective reaction chamber can be identified immediately and its use discontinued so that unproductive operations can be eliminated.

Abstract: An ion implanter and an ion implanting method compatible for both positive and negative ions. The ion implanter has an ion extractor and a mass analyzer for deflecting ions, having one of a positive or negative charged state, in a predetermined direction regardless of the charged state of the ions. A polarity converter changes the flux direction of a magnetic field in the mass analyzer according to the charged state of the ions. Thus, shallow and deep impurity layers can be formed into wafers without changing ion implanters, such that BF.sup.+ as well as B.sup.+ or P.sup.+ can be implanted with a single ion implanter. As a result, the product yield of a semiconductor device can be improved.