Abstract: A portable terminal device and a method for operating the same are provided. The portable terminal device includes a communicator configured to perform communication with an external device, a display configured to display a same image as an image displayed on the external device, an inputter configured to receive an input of a selection command, and a controller configured to perform an operation corresponding to an object included in the image at a time when the selection command is input.

Abstract: Disclosed are peptides for inhibiting mdm2 (mouse double minute 2) and a pharmaceutical composition comprising the same.

Abstract: Example embodiments relate to a method for manufacturing a semiconductor device, wherein a metal gate electrode therein may be formed without a void in a lower portion of the metal gate electrode. The method may include providing a substrate, forming a dummy gate electrode on the substrate, forming a gate spacer on the substrate to be contiguous to the dummy gate electrode, forming a first recess by simultaneously removing a portion of the dummy gate electrode and a portion of the gate spacer, the first recess having an upper end wider than a lower end, forming a second recess by removing the dummy gate electrode remaining after forming the first recess, and forming a metal gate electrode by depositing a metal to fill the first and second recesses.

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of gate structures including a metal on a substrate having an isolation layer, forming first insulating interlayer patterns covering sidewalls of the gate structures, forming first capping layer patterns and a second capping layer pattern on the gate structures and the first insulating interlayer patterns, the first capping layer patterns covering upper faces of the gate structures, and the second capping layer pattern overlapping the isolation layer, partially removing the first insulating interlayer patterns using the first and the second capping layer patterns as etching masks to form first openings that expose portions of the substrate, forming metal silicide patterns on the portions of the substrate exposed in the forming of the first openings, and forming conductive structures on the metal silicide patterns.

Abstract: There is provided a method for forming a pattern comprising, forming a first layer on an underlying layer including a substrate, forming a first mask pattern including a first opening pattern on the first layer, and forming a second mask pattern including a second opening pattern on the first mask pattern, wherein the second opening pattern includes a first region overlapping the first opening pattern and a second region not overlapping the first opening pattern, and etching is performed using the second mask pattern such that a third opening pattern corresponding to the first region and exposing an upper surface of the underlying layer is formed in the first layer, and a fourth opening pattern corresponding to the second region is formed in the first mask pattern.

Abstract: An automatic moving apparatus may include a collision prediction sensor, a control unit comparing a value measured by the collision prediction sensor, with a reference value stored in the control unit, and outputting a control signal when it may be determined that the value measured by the collision prediction sensor is higher than the reference value, and a headrest moving unit moving a headrest unit toward a passenger's head before the headrest unit comes into contact with the passenger's head, and including a stay rod connected to the headrest unit, both sides of the stay rod being placed in a vertical direction, tilting device tilting the stay rod forwards or backwards relative to a seatback in response to the control signal of the control unit, and vertical moving device moving the stay rod in a vertical direction in response to the control signal of the control unit.

Abstract: A method of manufacturing a semiconductor device includes forming a gate structure through a first insulating interlayer on a substrate such that the gate structure includes a spacer on a sidewall thereof, forming a first hard mask on the gate structure, partially removing the first insulating interlayer using the first hard mask as an etching mask to form a first contact hole such that the first contact hole exposes a top surface of the substrate, forming a metal silicide pattern on the top surface of the substrate exposed by the first contact hole, and forming a plug electrically connected to the metal silicide pattern.

Abstract: A method of manufacturing a semiconductor device, including the second sacrificial layer receiving a gate structure include a metal and a spacer on a sidewall of the gate structure therethrough being formed on a substrate. The second sacrificial layer is removed. A second etch stop layer and an insulating interlayer are sequentially formed on the gate structure, the spacer and the substrate. An opening passing through the insulating interlayer is formed to expose a portion of the gate structure, a portion of the spacer and a portion of the second etch stop layer on a portion of the substrate. The second etch stop layer being exposed through the opening is removed. The contact being electrically connected to the gate structure and the substrate and filling the opening is formed. The semiconductor device having the metal gate electrode and the shared contact has a desired leakage current characteristic and resistivity characteristics.

Abstract: In a method of manufacturing a semiconductor device, a first etching mask and a second etching mask are formed sequentially on a metal gate structure on a substrate and a first insulating interlayer covering a sidewall of the metal gate structure respectively. An opening is formed to expose a top surface of the substrate by removing a portion of the first insulating interlayer not overlapped with the first etching mask or the second etching mask. A metal silicide pattern is formed on the exposed top surface of the substrate. A plug on the metal silicide pattern is formed to fill a remaining portion of the opening. Further, a planarization layer may be used as the second etching mask.

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of gate structures including a metal on a substrate having an isolation layer, forming first insulating interlayer patterns covering sidewalls of the gate structures, forming first capping layer patterns and a second capping layer pattern on the gate structures and the first insulating interlayer patterns, the first capping layer patterns covering upper faces of the gate structures, and the second capping layer pattern overlapping the isolation layer, partially removing the first insulating interlayer patterns using the first and the second capping layer patterns as etching masks to form first openings that expose portions of the substrate, forming metal silicide patterns on the portions of the substrate exposed in the forming of the first openings, and forming conductive structures on the metal silicide patterns.

Abstract: Example embodiments relate to a method for manufacturing a semiconductor device, wherein a metal gate electrode therein may be formed without a void in a lower portion of the metal gate electrode. The method may include providing a substrate, forming a dummy gate electrode on the substrate, forming a gate spacer on the substrate to be contiguous to the dummy gate electrode, forming a first recess by simultaneously removing a portion of the dummy gate electrode and a portion of the gate spacer, the first recess having an upper end wider than a lower end, forming a second recess by removing the dummy gate electrode remaining after forming the first recess, and forming a metal gate electrode by depositing a metal to fill the first and second recesses.

Abstract: An automatic moving apparatus may include a collision prediction sensor, a control unit comparing a value measured by the collision prediction sensor, with a reference value stored in the control unit, and outputting a control signal when it may be determined that the value measured by the collision prediction sensor is higher than the reference value, and a headrest moving unit moving a headrest unit toward a passenger's head before the headrest unit comes into contact with the passenger's head, and including a stay rod connected to the headrest unit, both sides of the stay rod being placed in a vertical direction, tilting device tilting the stay rod forwards or backwards relative to a seatback in response to the control signal of the control unit, and vertical moving device moving the stay rod in a vertical direction in response to the control signal of the control unit.

Abstract: The present invention relates to a combination twist structure of a superconducting cable core. The present invention relates to a new type of a combination twist structure of a superconducting cable core capable of accommodating the thermal contraction of the cable core in the longitudinal direction without having a space for accommodation, thereby capable of reducing an outer diameter of the superconducting cable, and eliminating the use of an additional equipment for forming the space for accommodation. The present invention provides a combination twist structure of a superconducting cable core formed by twisting a plurality of cable cores. The cable cores are combined by repeatedly changing a twist direction of the cable cores, and the contraction of the cable cores in the longitudinal direction is accommodated by untwisting the cable cores.

Abstract: Provided is a superconducting cable provided with an enhanced cooling ability, the superconducting cable including a core including a superconducting wire rod; an inner sheath surrounding the core; an outer sheath surrounding the inner sheath; a plurality of communication pipes that have both ends communicating with the inner and outer sheaths, and are mounted in the longitudinal direction of the inner and outer sheaths; a plurality of valves that are mounted in the communication pipes; and a plurality of auxiliary cooling systems that are mounted on some of the communication pipes. Cooling fluid supplied from the cooling systems is supplied into the inner sheath through the communication pipes, and is then discharged to the outside through the valves.

Abstract: Disclosed are peptides for inhibiting mdm2 (mouse double minute 2) and a pharmaceutical composition comprising the same.

Abstract: Disclosed is a method for evaluating Internet contents created by users through an automatic analysis and output and recording media for storing a program implementing the same. The method includes inputting location information of Internet contents to be evaluated; automatically extracting predetermined evaluation factors from the Internet contents corresponding to the inputted location information; evaluating the Internet contents by substituting the extracted evaluation factors into a predetermined algorithm; and outputting evaluation information. Furthermore, a database for the corresponding contents, which is obtained based on the extracted evaluation factors and the information inputted by the user, enables a systematic provision for evaluation and ranking of the contents.

Abstract: A method and apparatus where a source delivers graphics data to a target, which receives and displays the graphics data. The source of the graphics data controls how the graphics data is to be displayed at the target. The source transmits a display control signal prescribing a manner in which the video signal is to be displayed in relation to the graphics data. A target receives the video signal, the graphics signal, and the display control signal, and combines the video signal and the graphics data in the manner prescribed by the display control signal to form a combined display at the target.

Abstract: The present invention relates to an insect repellent isolated from Foeniculum vulgare fruit, and more particularly, to an insect repellent comprising one or more compounds selected from the group consisting of fennel oil which is isolated from Foeniculum vulgare fruit, (+)-fenchone and E-9-octadecenoic acid. The fennel oil, (+)-fenchone and E-9-octadecenoic acid of the present invention are provided as insect repellent components due to their lack of toxicity to people.