Abstract: Disclosed embodiments concern solution deposition of at least a first inorganic compound on a substrate, typically for production of electronic devices, such as solution deposition of metal salts, including halides, carbonyls, acetates, sulfates, phosphates, carbonates, and mixtures thereof. Solutions may be deposited using any suitable process, particularly inkjet printing or spin coating. The method can involve depositing only a first solution, depositing a first solution plural times, or deposition of plural different solutions. Furthermore, the method may involve simultaneous or serial deposition of two or more solutions. The method may further comprise post deposition processing the deposited material, such as thermal annealing, oxidation processes, reduction processes, exchange reactions, and combinations thereof.

Abstract: A method includes providing a first distance between an inlet of a line and a chuck for supporting a substrate. A first material is applied to the substrate on the chuck through the line to process the substrate. A second distance is provided between the inlet of the line and the chuck. Byproducts generated during processing of the substrate are then removed using a second material. Here, the second material has reactivity with respect to the chuck having the second distance from the inlet smaller than that of the second material with respect to the chuck having the first distance from the inlet. A distance between the chuck and the inlet of the line is adequately adjusted in the process using the plasma gas so that the substrate on the chuck may not be moved.