Abstract: The method of fabricating a semiconductor device may include forming a semiconductor die on a substrate, forming an interposer including at least one integrated circuit connected to the semiconductor die on the substrate or on the semiconductor die, and performing encapsulation to surround the semiconductor die and the interposer.

Abstract: The method of fabricating a semiconductor device may include forming a semiconductor die on a substrate, forming an interposer including at least one integrated circuit connected to the semiconductor die on the substrate or on the semiconductor die, and performing encapsulation to surround the semiconductor die and the interposer.

Abstract: A bond pad and a method of making the same for a semiconductor die has a bonding region formed on the bond pad. A test region is formed on the bond pad and is adjacent to the bonding region.

Abstract: A semiconductor device and a method of fabricating the same. An interposer used for the semiconductor device includes integrated circuits therein to realize the functions of a decoupling capacitor, an ESD preventing circuit, an impedance matching circuit, and termination. The semiconductor device may include a semiconductor die with a through silicon via (TSV) structure having two or more through electrodes that pass through the semiconductor die, in which each of the through electrodes are connected to a respective bond pad of the semiconductor die.

Abstract: In accordance with the present invention, there is provided a semiconductor package and a fabrication method thereof. The semiconductor package is provided with a substrate made of metal, thereby improving efficiency of thermal emission from a semiconductor die mounted to the substrate, and simplifying the fabrication process for the substrate which reduces fabricating costs. Further, unlike a conventional land, a rivet electrically insulated with the substrate is inserted into a corresponding hole of the substrate, the upper and lower surfaces of the rivet being removed to form land, thereby simplifying the fabrication process for the substrate which further reduces fabricating costs.

Abstract: A semiconductor device and a method of fabricating the same are disclosed. An interposer used for the semiconductor device includes integrated circuits therein to realize the functions of a decoupling capacitor, an ESD preventing circuit, an impedance matching circuit, and termination. Therefore, it is possible to improve the reliability of the operation of the semiconductor device.

Abstract: Disclosed is a lead frame, a semiconductor device and a fabrication method related to the semiconductor device. Since the lead frame has a land connecting bar, an upper surface of which is half-etched, the land connecting bar is more easily removed by a blade than a conventional land connecting bar in a fabrication process for the semiconductor device. Accordingly, stress applied to the lands when the land connecting bar is removed is reduced, and a flatness of the lands is maintained. Also, first and second lands constituting the lands are alternately formed with the land connecting bar, leads are alternately formed with the second lands, and wire bonding regions of the leads are positioned on a plane higher than the second lands. Accordingly, an interval between the conductive wires can be constantly maintained and the conductive wires have different traces, thus preventing a short between the conductive wires due to wire sweeping in an encapsulation process.

Abstract: Disclosed are an image sensor package and its manufacturing method. As an example, an infrared ray protection glass is positioned directly on an image sensing region of an image sensor die. An electrically conductive wire and so forth located outside the image sensing region are encapsulated. At this time, one surface of the infrared ray protection glass is exposed outwardly. A mount holder to which a barrel with lenses is coupled is adhered on a surface of the encapsulant outside the infrared ray protection glass. The mount holder has a similar width to that of the image sensor die. Accordingly, the overall width of the image sensor package can become reduced, and the electrically conductive wire is protected against oxidization because it is surrounded by the encapsulant.