Abstract: A magnetoresistive memory element utilizing an enhanced proximity effect of ferromagnetic layers (ML) in a tri-layer configuration. A oscillatory decay characteristic of the pair wavefunction is expanded by using materials for the ML with a low Curie temperature and a small exchange field. As a result, the sum magnetic field of the alternetingly parallel and anti-parallel magnetized ML changes the critical temperature of the superconductor below and above the operational device temperature such that a passing read pulse remains unaltered at one of the two logical conditions stored within the device.