Abstract: The present invention relates to a fibrous transistor, and a method of manufacturing the same, and more particularly, to a fibrous transistor, in which a source fiber and a drain fiber are formed in a twisted state in a longitudinal direction, so that a contact surface of the source fiber and the drain fiber is increased, thereby enabling charges to easily move, and a method of manufacturing the same. Further, the present invention relates to a fibrous transistor, in which a gate insulating layer is formed by using ion gel, so that the fibrous transistor may obtain a high current at the same operation voltage, thereby having a low operation voltage, and a method of manufacturing the same.

Abstract: Embodiments are directed to a chalcogenide material-based filterless color image sensor, which includes a substrate, a first chalcogenide material layer formed on a substrate for a first color, a second chalcogenide material layer formed on the first chalcogenide material layer for a second color, and a third chalcogenide material layer formed on the second chalcogenide material layer for a third color.

Abstract: Provided are an anti-reflection nano-coating structure and a method of manufacturing the same. The anti-reflection nano-coating structure has low dependency on incident light. The anti-reflection nano-coating structure has a normal-align nano-structure on the entire surface of the substrate regardless of curvature of the substrate by controlling a ratio of reactive gas during sputtering.

Abstract: A field-effect transistor includes a gate, a source and a drain; a semiconductor layer between the source and the drain; and a gate insulator between the gate and the semiconductor layer. The gate insulator comprises a first layer adjoining the semiconductor layer; and a second layer. The first layer is formed from an amorphous fluoropolymer having a first dielectric constant and a first thickness. The second layer has a second dielectric constant and a second thickness. The first dielectric constant is smaller than 3, the first thickness is smaller than 200 nm, the second dielectric constant is higher than 5, and the second thickness is smaller than 500 nm.

Abstract: Provided are an anti-reflection nano-coating structure and a method of manufacturing the same. The anti-reflection nano-coating structure has low dependency on incident light. The anti-reflection nano-coating structure has a normal-align nano-structure on the entire surface of the substrate regardless of curvature of the substrate by controlling a ratio of reactive gas during sputtering.

Abstract: The various inventions and/or their embodiments disclosed herein relate to certain naphthalene diimide (NDI) compounds wherein the NDI groups are bonded to certain subclasses of bridging heteroaryl (hAr) groups, such as the “NDI-hAr-NDI” oligomeric compounds, wherein hAr is a heteroaryl group chosen to provide desirable electronic and steric properties, and the possible identities of the “Rz” terminal peripheral substituent groups are described herein. Transistor and inverter devices can be prepared.

Abstract: The inventions disclosed and described herein relate to new and efficient generic methods for making a wide variety of compounds having HAr—Z-Har tricyclic cores, wherein HAr is an optionally substituted five or six membered heteroaryl ring, and Hal is a halogen, and Z is a bridging radical, such as S, Sc, NR5, C(O), C(O)C(O), Si(R5)2, SO, SO2, PR5, BR5, C(R5)2 or P(O)R5 and both HAr are covalently bound to one another. The synthetic methods employ a “Base-Catalyzed Halogen Dance” reaction to prepare a metallated compound comprising a five or six membered heteroaryl ring comprising a halogen atom, and then oxidatively coupling the reactive intermediate compound. The compounds of Formula (II) and/or oligomer or polymers comprising repeat units having Formula (II) can be useful for making semi-conducting materials, and/or electronic devices comprising those materials. Acyl compounds can be prepared. Heteroarylene substituents can be used. The core tricyclic core can be coupled to itself.

Abstract: A field-effect transistor includes a gate, a source and a drain; a semiconductor layer between the source and the drain; and a gate insulator between the gate and the semiconductor layer. The gate insulator comprises a first layer adjoining the semiconductor layer; and a second layer. The first layer is formed from an amorphous fluoropolymer having a first dielectric constant and a first thickness. The second layer has a second dielectric constant and a second thickness. The first dielectric constant is smaller than 3, the first thickness is smaller than 200 nm, the second dielectric constant is higher than 5, and the second thickness is smaller than 500 nm.