Patents by Inventor Do Yoon LIM

Do Yoon LIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Input offset detection amplification circuit and semiconductor memory device including same
    Patent number: 12776363
    Abstract: According to various embodiments of the present invention, an input/output sense amplifier circuit in a sense amplifier circuit includes a 1-1 transistor having a source connected to a first global input/output line, a 1-2 transistor having a source connected to a second global input/output line, and a metal-oxide-semiconductor capacitor (MOSCAP) configured to connect a gate of the 1-1 transistor to a gate of the 1-2 transistor.
    Type: Grant
    Filed: December 30, 2024
    Date of Patent: October 27, 2026
    Assignee: UIF (University Industry Foundation), Yonsei University
    Inventors: Seong Ook Jung, Do Yoon Lim, Sehee Lim, Donghan Ko
  • DUAL MODE INVERTER-BASED WRITE TERMINATION CIRCUIT, METHOD THEREOF, AND DEVICES HAVING THE SAME
    Publication number: 20260120738
    Abstract: A memory device includes: a memory cell, a reference memory cell, and a dual mode inverter-based write termination circuit including a write driver for writing data to the memory cell, the dual mode inverter-based write termination circuit detecting the completion of writing data to the memory cell and terminating the operation of the write driver, and also sequentially receiving an output signal of the reference memory cell and an output signal of the memory cell through one input node to sense and amplify the data stored in the memory cell.
    Type: Application
    Filed: October 24, 2025
    Publication date: April 30, 2026
    Inventors: SEONG-OOK JUNG, DO YOON LIM, DONG HAN KO, WAN GYU LEE
  • INPUT OFFSET DETECTION AMPLIFICATION CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE INCLUDING SAME
    Publication number: 20250239297
    Abstract: According to various embodiments of the present invention, an input/output sense amplifier circuit in a sense amplifier circuit includes a 1-1 transistor having a source connected to a first global input/output line, a 1-2 transistor having a source connected to a second global input/output line, and a metal-oxide-semiconductor capacitor (MOSCAP) configured to connect a gate of the 1-1 transistor to a gate of the 1-2 transistor.
    Type: Application
    Filed: December 30, 2024
    Publication date: July 24, 2025
    Inventors: Seong Ook JUNG, Do Yoon LIM, Sehee LIM, Donghan KO