Patents by Inventor Doc Jin KIM

Doc Jin KIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Novel Dialkoxynaphtho[2,3-C]Furan-1(3H)-One Derivatives and Pharmaceutical Composition For Preventing or Treating Respiratory Disease or SARS-COV-2 Infection Disease, Comprising Same
    Publication number: 20240368104
    Abstract: The present invention provides a compound of chemical formula 1, a compound of chemical formula 3, compound [212], compound [224], or compound [228], a pharmaceutically acceptable salt thereof, a stereoisomer thereof, a hydrate thereof, or a solvate thereof, and a pharmaceutical composition comprising same. The pharmaceutical composition has excellent antiviral efficacy, thereby having a preventive or treatment effect on viral infectious disease such as SARS-COV-2, and exhibits an inhibitory effect on IL-5 expression and thus has a preventive or treatment effect on respiratory disease or allergic disease.
    Type: Application
    Filed: March 30, 2022
    Publication date: November 7, 2024
    Applicant: DONG WHA PHARM. CO., LTD.
    Inventors: Jae Kyung LIM, Jung UK CHOI, Dong Hyuk SHIN, Yong Tae KIM, Seung Hwan KIM, Jung Hwan KIM, O Jin KWON, Jin Yong JUNG, Seo Hee JEONG, Yun Ha HWANG, Doc Gyun JEONG, Ji Hyun YOUM, Whui Jung PARK
  • Semiconductor device
    Patent number: 9054104
    Abstract: A semiconductor device includes a metal pad formed over a semiconductor substrate; a dummy metal pad spaced apart from the metal pad by an open region; and a Polymide Isoindro Quirazorindione (PIQ) layer formed to cover the open region and to define a pad open region by exposing a center part of the metal pad. The semiconductor device forms an additional open region at a region spaced apart from an edge part of the pad open region, preventing short-circuiting between the metal pad and the adjacent circuit line which might be caused by a crack generated at the edge of the pad open region when a probe is connected to the metal pad, and further preventing a defective semiconductor device from being generated.
    Type: Grant
    Filed: December 19, 2013
    Date of Patent: June 9, 2015
    Assignee: SK HYNIX INC.
    Inventors: Doc Jin Kim, Seung Jin Lee
  • SEMICONDUCTOR DEVICE
    Publication number: 20140332977
    Abstract: A semiconductor device includes a metal pad formed over a semiconductor substrate; a dummy metal pad spaced apart from the metal pad by an open region; and a Polymide Isoindro Quirazorindione (PIQ) layer formed to cover the open region and to define a pad open region by exposing a center part of the metal pad. The semiconductor device forms an additional open region at a region spaced apart from an edge part of the pad open region, preventing short-circuiting between the metal pad and the adjacent circuit line which might be caused by a crack generated at the edge of the pad open region when a probe is connected to the metal pad, and further preventing a defective semiconductor device from being generated.
    Type: Application
    Filed: December 19, 2013
    Publication date: November 13, 2014
    Applicant: SK HYNIX INC.
    Inventors: Doc Jin KIM, Seung Jin LEE