Abstract: A semiconductor device includes a guard ring, a crack detecting circuit, and a conductive sensing line over a semiconductor substrate. The guard ring is electrically connected to a first impurity-doped region of the semiconductor substrate. The conductive sensing line is disposed at a location isolated from the crack detecting circuit with the guard ring interposed therebetween, and is extended along the guard ring and formed in a shape in which both ends of the conductive sensing line are spaced apart from each other. The semiconductor substrate includes a second impurity-doped region buried in the first impurity-doped region and extended to pass under the guard ring, a third impurity-doped region that penetrates the first impurity-doped region so that the third impurity-doped region electrically connects the conductive sensing line to the second impurity-doped region, and a fourth impurity-doped region that electrically connects the crack detecting circuit to the second impurity-doped region.

Abstract: A semiconductor device includes a metal pad formed over a semiconductor substrate; a dummy metal pad spaced apart from the metal pad by an open region; and a Polymide Isoindro Quirazorindione (PIQ) layer formed to cover the open region and to define a pad open region by exposing a center part of the metal pad. The semiconductor device forms an additional open region at a region spaced apart from an edge part of the pad open region, preventing short-circuiting between the metal pad and the adjacent circuit line which might be caused by a crack generated at the edge of the pad open region when a probe is connected to the metal pad, and further preventing a defective semiconductor device from being generated.

Abstract: A semiconductor device includes a metal pad formed over a semiconductor substrate; a dummy metal pad spaced apart from the metal pad by an open region; and a Polymide Isoindro Quirazorindione (PIQ) layer formed to cover the open region and to define a pad open region by exposing a center part of the metal pad. The semiconductor device forms an additional open region at a region spaced apart from an edge part of the pad open region, preventing short-circuiting between the metal pad and the adjacent circuit line which might be caused by a crack generated at the edge of the pad open region when a probe is connected to the metal pad, and further preventing a defective semiconductor device from being generated.