Abstract: A semiconductor substrate includes a main surface inclined by a first off-angle greater than 0° from a first direction parallel to a crystal plane, with respect to the crystal plane, in a first radial direction of the main surface, and a notch disposed toward the first direction, at an edge of the main surface in the first radial direction.

Abstract: A semiconductor substrate includes a main surface inclined by a first off-angle greater than 0° from a first direction parallel to a crystal plane, with respect to the crystal plane, in a first radial direction of the main surface, and a notch disposed toward the first direction, at an edge of the main surface in the first radial direction.

Abstract: A semiconductor wafer is provided. The semiconductor wafer includes a wafer body including a first surface and a second surface opposite the first surface; and a bevel portion disposed along an outer circumference of the wafer body and including an inclined surface, an outermost point, a first surface end portion connecting the bevel portion to the first surface and a second surface end portion connecting the bevel portion to the second surface. A first bevel angle between a first tangential direction of the inclined surface and the first surface corresponds to a capillary force of a fluid on the first surface, and a first bevel length between the first surface end portion and the outermost point along a first direction substantially parallel to the first surface corresponds to a first surface flatness.

Abstract: A semiconductor wafer is provided. The semiconductor wafer includes a wafer body including a first surface and a second surface opposite the first surface; and a bevel portion disposed along an outer circumference of the wafer body and including an inclined surface, an outermost point, a first surface end portion connecting the bevel portion to the first surface and a second surface end portion connecting the bevel portion to the second surface. A first bevel angle between a first tangential direction of the inclined surface and the first surface corresponds to a capillary force of a fluid on the first surface, and a first bevel length between the first surface end portion and the outermost point along a first direction substantially parallel to the first surface corresponds to a first surface flatness.

Abstract: A chemical vapor deposition (CVD) method includes forming a first semiconductor layer on a substrate that is mounted on a satellite disk at a first process temperature; and forming a second semiconductor layer on the first semiconductor layer at a second process temperature. Also, a method of manufacturing a light-emitting device (LED) includes: forming a quantum well layer on a substrate that is mounted on a satellite disk at a first process temperature; and forming a quantum barrier layer on the quantum well layer at a second process temperature.