Abstract: A semiconductor device in chip size package includes first and second metal oxide semiconductor transistors both vertical transistors formed in first and second regions obtained by dividing the semiconductor device into halves. The first metal oxide semiconductor transistor includes one or more first gate electrodes and four or more first source electrodes provided in one major surface, each of the first gate electrodes is surrounded, in top view, by the first source electrodes, and for any combination of a first gate electrode and a first source electrode, closest points between the first gate and first source electrodes are on a line inclined to a chip side. The second metal oxide semiconductor transistor includes the same structure as the first metal oxide semiconductor transistor. A conductor that connects the drains of the first and second metal oxide semiconductor transistors is provided in the other major surface of the semiconductor device.

Abstract: The present invention relates to a mobile terminal having a touch screen capable of sensing a touch, comprising: a first sensing unit for sensing the touch screen and a pressure applied to the touch screen; a second sensing unit for sensing a touch applied to the touch screen; and a control unit for determining the type of touch applied to the touch screen on the basis of at least one piece of sensing information sensed by the first sensing unit and the second sensing unit in a state in which an execution screen image of a first application is displayed on the touch screen, and executing a function related to the first application and/or a function related to a second application different from the first application on the basis of the type of the touch, wherein, when the function related to the second application is executed, the control unit executes the function related to the second application by using information transmitted from the first application.

Abstract: A semiconductor device in chip size package includes first and second metal oxide semiconductor transistors both vertical transistors formed in first and second regions obtained by dividing the semiconductor device into halves. The first metal oxide semiconductor transistor includes one or more first gate electrodes and four or more first source electrodes provided in one major surface, each of the first gate electrodes is surrounded, in top view, by the first source electrodes, and for any combination of a first gate electrode and a first source electrode, closest points between the first gate and first source electrodes are on a line inclined to a chip side. The second metal oxide semiconductor transistor includes the same structure as the first metal oxide semiconductor transistor. A conductor that connects the drains of the first and second metal oxide semiconductor transistors is provided in the other major surface of the semiconductor device.

Abstract: A mobile terminal including a display unit; a wireless communication unit configured to wirelessly communicate with a flying object; and a controller configured to receive an input for setting at least one member of a created group of members to be a target, and remotely control the flying object to obtain an image of the at least one member set as the target.

Abstract: A mobile terminal including a display unit; a wireless communication unit configured to wirelessly communicate with a flying object; and a controller configured to receive an input for setting at least one member of a created group of members to be a target, and remotely control the flying object to obtain an image of the at least one member set as the target.