Abstract: Discussed is a self-assembly apparatus that can include a chamber, at least one first supply part configured to supply a fluid to the chamber, a mounting part disposed on a first side of the chamber to mount a substrate to be inclined with respect to a horizontal plane of the chamber, the substrate having an assembly surface, and a magnet module disposed on an opposite surface of the substrate opposite to the assembly surface of the substrate, wherein the mounting part is configured to: insert the substrate into an upper side of the chamber, guide the inserted substrate from the upper side of the chamber toward a lower side of the chamber, and fix the guided substrate to the lower side of the chamber

Abstract: A method for manufacturing a display device according to the present invention is characterized by comprising the steps of: supplying semiconductor light-emitting elements in a first chamber containing a fluid; disposing a distribution device, in which a plurality of magnets are arranged, on one side of the first chamber; rotating the distribution device such that the semiconductor light-emitting elements form a continuous pattern along the arrangement direction of the plurality of magnets; and stopping the distribution device such that the semiconductor light-emitting elements are distributed to a plurality of dummies, wherein in the step of stopping the distribution device, the plurality of dummies are formed at positions corresponding to the plurality of magnets.

Abstract: According to a semiconductor light-emitting element collecting apparatus and a semiconductor light-emitting element collecting method using the same according to an embodiment of the present invention, in order to collect semiconductor light-emitting elements, a fluid accommodated in a housing unit is rotated such that semiconductor light-emitting elements are guided to sink to a bottom surface of the housing unit, and accordingly, the semiconductor light-emitting elements can be rapidly collected. In addition, a collecting operation can be performed without exerting the physical force to the semiconductor light-emitting elements, a collecting rate of the semiconductor light-emitting elements can be improved.

Abstract: A display device can include first and second assembly electrodes spaced apart from each other on the substrate, an insulating layer disposed between the first assembly electrode and the second assembly electrode, an assembly barrier wall disposed on the first assembly electrode, the second assembly electrode, the insulating layer and having an assembly hole, an annealed light-transmitting electrode layer disposed on the first assembly electrode and a semiconductor light emitting device disposed in contact with the annealed light-transmitting electrode layer.

Abstract: The present invention relates to a method of manufacturing a display device, and more particularly, to a chip tray for supplying a micro-LED. The present invention provides a chip tray for transporting semiconductor light emitting devices in a fluid contained in an assembly chamber. Specifically, the present invention includes a tray for accommodating a plurality of semiconductor light emitting devices, a chip supply unit configured to supply a plurality of semiconductor light emitting devices to the tray unit and a nozzle unit disposed on the tray unit and configured to supply the semiconductor light emitting devices accommodated in the chip supply unit onto the tray unit. And the nozzle unit includes holes formed at predetermined intervals on the tray unit to supply the semiconductor light emitting devices at predetermined intervals.

Abstract: A semiconductor light-emitting element supply device according to an embodiment of the present invention supplies semiconductor light-emitting elements in a fluid chamber in which self-assembly occurs, the semdconductor light-emitting element supply device comprising: a tray disposed in the fluid chamber; a transfer unit which includes a magnet and a magnet accommodating part for accommodating the magnet and which transfers the semiconductor light-emitting elements by using magnetic force; a supply unit disposed above the tray to supply the transferred semiconductor light-emitting elements to the tray; and a control unit for controlling operations of the tray, the transfer unit and the supply unit, wherein the control unit controls the position of the magnet accommodated in the magnet accommodating part so that the semiconductor light-emitting elements are adhered on one surface of the magnet accommodating part or the adhered semiconductor light-emittng elements are separated from the one surface of the magne

Abstract: A device for collecting semiconductor light emitting diodes according to an embodiment of the present disclosure includes an electromagnet portion disposed in a fluid chamber into which semiconductor light emitting diodes including a magnetic material are put to form a magnetic field when power is applied, a power supply portion connected to the electromagnet portion and applying power to the electromagnet portion, and a driving portion moving the electromagnet portion in a width direction, in a longitudinal direction, and in a height direction of the fluid chamber, in which the electromagnet portion guides the semiconductor light emitting devices to a surface on which a magnetic field is formed when power is applied.

Abstract: A method for manufacturing a display device can include forming an assembly electrode on a substrate; applying an insulating layer on the assembly electrode; disposing a partition wall on the insulating layer; defining an assembly groove in the partition wall; providing an light emitting diode (LED) having an assembly face corresponding to a shape of the assembly groove in the partition wall; and assembling the assembly face of the LED into the assembly groove in the partition wall, in which the LED includes a first electrode, a first semiconductor layer, an active layer, a second semiconductor layer, and a second electrode stacked in a first direction to form a stacked structure.

Abstract: Disclosed is a solar cell including a plurality of first electrodes electrically connected to a plurality of first conductive regions; and a plurality of second electrodes electrically connected to a plurality of second conductive regions. The plurality of first conductive regions and the plurality of second conductive regions are spaced apart from an edge of a semiconductor substrate by a first interval, the plurality of first conductive regions and the plurality of second conductive regions are spaced apart from each other in a second direction crossing a first direction by a second interval, and the second interval is the same as or less than the first interval.

Abstract: A solar cell can include a substrate of a first conductive type; an emitter region of a second conductive type opposite the first conductive type and which forms a p-n junction along with the substrate; an anti-reflection layer positioned on the emitter region; a front electrode part electrically connected to the emitter region; and a back electrode part electrically connected to the substrate, wherein the substrate including a first area formed of single crystal silicon and a second area formed of polycrystalline silicon, wherein a thickness of the anti-reflection layer positioned on the first area is less than a thickness of the anti-reflection layer positioned on the second area, wherein a roughness of an incident surface of the substrate in the first area is different from a roughness of the incident surface of the substrate in the second area, and wherein the emitter region is entirely formed on the incident surface of the substrate.

Abstract: A solar cell includes a substrate, an emitter region positioned at a first surface of the substrate, a first electrode positioned on the first surface of the substrate, a back passivation layer positioned on a second surface opposite the first surface of the substrate, and a second electrode which is positioned on the back passivation layer and is electrically connected to the substrate through holes of the back passivation layer. The second electrode includes connection electrodes positioned inside the holes of the back passivation layer and a back electrode layer positioned on the connection electrodes and the back passivation layer. An adhesion enhanced layer is positioned between the back electrode layer and the back passivation layer and contains at least one of intrinsic amorphous silicon and intrinsic microcrystalline silicon.

Abstract: A solar cell can include a substrate of a first conductive type; an emitter region of a second conductive type opposite the first conductive type and which forms a p-n junction along with the substrate; an anti-reflection layer positioned on the emitter region; a front electrode part electrically connected to the emitter region; and a back electrode part electrically connected to the substrate, wherein the substrate including a first area formed of single crystal silicon and a second area formed of polycrystalline silicon, wherein a thickness of the anti-reflection layer positioned on the first area is less than a thickness of the anti-reflection layer positioned on the second area, wherein a roughness of an incident surface of the substrate in the first area is different from a roughness of the incident surface of the substrate in the second area, and wherein the emitter region is entirely formed on the incident surface of the substrate.

Abstract: A solar cell includes a substrate of a first conductive type, an emitter region of a second conductive type opposite the first conductive type and which forms a p-n junction along with the substrate, an anti-reflection layer positioned on the emitter region, a front electrode part electrically connected to the emitter region, and a back electrode part electrically connected to the substrate. The substrate includes a first area formed of single crystal silicon and a second area formed of polycrystalline silicon. A thickness of the anti-reflection layer positioned in the first area is less than a thickness of the anti-reflection layer positioned in the second area.

Abstract: A solar cell and a method for manufacturing the solar cell are discussed. An embodiment of the method includes forming an emitter region containing impurities of a second conductive type opposite a first conductive type at a back surface of a semiconductor substrate containing impurities of the first conductive type, forming a passivation layer paste containing impurities of the first conductive type on the emitter region, selectively performing a thermal process on a first partial area of the passivation layer paste to form a back surface field region containing impurities of the first conductive type at a partial area of the emitter region, forming a plurality of openings in partial areas of the passivation layer paste to form a passivation layer, forming a first electrode connected to the emitter region, and forming a second electrode connected to the back surface field region.

Abstract: A solar cell includes a substrate, an emitter region positioned at a first surface of the substrate, a first electrode positioned on the first surface of the substrate, a back passivation layer positioned on a second surface opposite the first surface of the substrate, and a second electrode which is positioned on the back passivation layer and is electrically connected to the substrate through holes of the back passivation layer. The second electrode includes connection electrodes positioned inside the holes of the back passivation layer and a back electrode layer positioned on the connection electrodes and the back passivation layer. An adhesion enhanced layer is positioned between the back electrode layer and the back passivation layer and contains at least one of intrinsic amorphous silicon and intrinsic microcrystalline silicon.

Abstract: A solar cell includes a substrate of a first conductive type, an emitter region of a second conductive type opposite the first conductive type and which forms a p-n junction along with the substrate, an anti-reflection layer positioned on the emitter region, a front electrode part electrically connected to the emitter region, and a back electrode part electrically connected to the substrate. The substrate includes a first area formed of single crystal silicon and a second area formed of polycrystalline silicon. A thickness of the anti-reflection layer positioned in the first area is less than a thickness of the anti-reflection layer positioned in the second area.