Abstract: A solid-state drive device includes a first module including a first region containing a volatile main memory device and a controller device and a second region containing a first nonvolatile memory device, a second module disposed on the first module and having a third region containing a second nonvolatile memory device, the second module being connected to the first module, and a heat dissipating member disposed on the second module as vertically juxtaposed with the first and second modules. The heat dissipating member has a protruding portion protruding toward the first module and in direct thermal contact with the first region, and a plate-shaped portion having a main surface in direct thermal contact with the third region.

Abstract: A solid-state drive device includes a first module including a first region containing a volatile main memory device and a controller device and a second region containing a first nonvolatile memory device, a second module disposed on the first module and having a third region containing a second nonvolatile memory device, the second module being connected to the first module, and a heat dissipating member disposed on the second module as vertically juxtaposed with the first and second modules. The heat dissipating member has a protruding portion protruding toward the first module and in direct thermal contact with the first region, and a plate-shaped portion having a main surface in direct thermal contact with the third region.

Abstract: A solid-state drive device includes a first module including a first region containing a volatile main memory device and a controller device and a second region containing a first nonvolatile memory device, a second module disposed on the first module and having a third region containing a second nonvolatile memory device, the second module being connected to the first module, and a heat dissipating member disposed on the second module as vertically juxtaposed with the first and second modules. The heat dissipating member has a protruding portion protruding toward the first module and in direct thermal contact with the first region, and a plate-shaped portion having a main surface in direct thermal contact with the third region.

Abstract: A solid-state drive device includes a first module including a first region containing a volatile main memory device and a controller device and a second region containing a first nonvolatile memory device, a second module disposed on the first module and having a third region containing a second nonvolatile memory device, the second module being connected to the first module, and a heat dissipating member disposed on the second module as vertically juxtaposed with the first and second modules. The heat dissipating member has a protruding portion protruding toward the first module and in direct thermal contact with the first region, and a plate-shaped portion having a main surface in direct thermal contact with the third region.

Abstract: A solid-state drive device includes a first module including a first region containing a volatile main memory device and a controller device and a second region containing a first nonvolatile memory device, a second module disposed on the first module and having a third region containing a second nonvolatile memory device, the second module being connected to the first module, and a heat dissipating member disposed on the second module as vertically juxtaposed with the first and second modules. The heat dissipating member has a protruding portion protruding toward the first module and in direct thermal contact with the first region, and a plate-shaped portion having a main surface in direct thermal contact with the third region.

Abstract: A method of controlling a temperature of a non-volatile storage device includes determining whether the temperature of the non-volatile storage device is greater than a control engagement temperature, and adjusting a data I/O performance level P when the temperature of the non-volatile storage device is greater than the control engagement temperature. The non-volatile storage device may operate at the maximum performance level in a range in which the non-volatile storage device is protected from heat.

Abstract: A multi-stacked structure of semiconductor packages includes a plurality of substrates stacked in a vertical direction, semiconductor packages mounted on each substrate of the plurality of the substrates, a heat release column extending commonly through the plurality of the substrates and overlapping at least one semiconductor package serving as a heat generation source among the semiconductor packages in the vertical direction, and a heat dissipation part thermally connected to one end of the heat release column.

Abstract: A method of controlling a temperature of a non-volatile storage device includes determining whether the temperature of the non-volatile storage device is greater than a control engagement temperature, and adjusting a data I/O performance level P when the temperature of the non-volatile storage device is greater than the control engagement temperature. The non-volatile storage device may operate at the maximum performance level in a range in which the non-volatile storage device is protected from heat.

Abstract: A memory card pack includes an adaptor insertable in a memory slot of an application device and including a semiconductor chip having a control circuit therein and an expansion socket including a plurality of slots, each slot being configured to receive a memory card, and a plurality of contacts electrically connecting the control circuit to each memory card.

Abstract: A memory card pack includes an adaptor insertable in a memory slot of an application device and including a semiconductor chip having a control circuit therein and an expansion socket including a plurality of slots, each slot being configured to receive a memory card, and a plurality of contacts electrically connecting the control circuit to each memory card.