Abstract: An apparatus for sampling and detecting a pathogen in air comprising a first air sampling module, a second module for the isolation of viral RNA and a third module for amplification and detection of the viral RNA; thanks to the integration between the modules the apparatus is compact and portable and can be used for in situ sampling of air in closed environments such as ambulances or hospital rooms, air in the external environment and air exhaled by patients.

Abstract: An adsorbent for halogenated anaesthetics includes: an inorganic material; and an organic material providing a framework for the inorganic material. The inorganic material may be chromium and the organic material may be terephthalic acid. The adsorbent may be formed or configured such that the adsorbent includes coordinatively unsaturated sites or such that the inorganic material may form octahedral structures. The adsorbent is formed or configured to be substantially regenerated at approximately room temperature and to provide selectivity for sevofluorane in water vapour of approximately 1.0. A method of producing an adsorbent includes: selecting an appropriate chemical containing an inorganic material; selecting an organic material to provide a framework for the inorganic material; dissolving the base chemical in water; mixing the organic material with the dissolved base chemical; heating the mixture; filtering the mixture to remove excess organic material; and drying the filtrate.

Abstract: An adsorbent for halogenated anaesthetics includes: an inorganic material; and an organic material providing a framework for the inorganic material. The inorganic material may be chromium and the organic material may be terephthalic acid. The adsorbent may be formed or configured such that the adsorbent includes coordinatively unsaturated sites or such that the inorganic material may form octahedral structures. The adsorbent is formed or configured to be substantially regenerated at approximately room temperature and to provide selectivity for sevofluorane in water vapor of approximately 1.0. A method of producing an adsorbent includes: selecting an appropriate chemical containing an inorganic material; selecting an organic material to provide a framework for the inorganic material; dissolving the base chemical in water; mixing the organic material with the dissolved base chemical; heating the mixture; filtering the mixture to remove excess organic material; and drying the filtrate.

Abstract: An adsorbent for halogenated anaesthetics includes: an inorganic material; and an organic material providing a framework for the inorganic material. The inorganic material may be chromium and the organic material may be terephthalic acid. The adsorbent may be formed or configured such that the adsorbent includes coordinatively unsaturated sites or such that the inorganic material may form octahedral structures. The adsorbent is formed or configured to be substantially regenerated at approximately room temperature and to provide selectivity for sevofluorane in water vapour of approximately 1.0. A method of producing an adsorbent includes: selecting an appropriate chemical containing an inorganic material; selecting an organic material to provide a framework for the inorganic material; dissolving the base chemical in water; mixing the organic material with the dissolved base chemical; heating the mixture; filtering the mixture to remove excess organic material; and drying the filtrate.

Abstract: A method for manufacturing a solar cell includes providing a first conductivity type doped crystalline silicon wafer, depositing on one side a first intrinsic a-Si:H buffer layer, followed by a second conductivity type doped a-Si:H layer, turning over the wafer and depositing on the opposite side a surface passivating anti-reflection coating, applying a first mask having a grid opening on the second conductivity type doped a-Si:H covered surface of the wafer, dry etching to remove the second conductivity type doped a-Si:H layer not covered by the first mask, while maintaining the first mask in position: depositing a second intrinsic buffer layer of a-Si:H, depositing a first conductivity type doped a-Si:H layer.

Abstract: A system for the detection of infrared light (IR with wavelength &lgr;>800 nm) of high sensitivity. It is based on the measurement of the capacitance in structures made of amorphous silicon, constituted of a junction having two electrodes connecting to outside and susceptible of being built using already-known technologies for the deposition of thin films. The p+ and n+ layers (FIG. 1) are made of materials strongly doped with boron and phosphorous atoms. During the fabrication process the temperatures are such as to permit its construction on various substrates. The technologies used make its fabrication possible on large areas and its conformation in two-dimensional matrices of high resolution.