Abstract: Adiabatic splitters are disclosed. In one aspect, an adiabatic splitter includes a first waveguide and a second waveguide spaced from the first waveguide by a gap. The second waveguide has a first layer and a second layer. In a first stage of the adiabatic splitter, the first and second waveguides converge toward one another and the first and second layers are in a stacked arrangement. In a second stage of the adiabatic splitter, the second layer tapers and translates so that the first and second layers are no longer in the stacked arrangement at least at an output of the adiabatic splitter.

Abstract: An optical apparatus comprises a semiconductor substrate, and a supermode filtering waveguide (SFW) emitter disposed on the semiconductor substrate. The SFW emitter comprises a first optical waveguide, a spacer layer, and a second optical waveguide spaced apart from the first optical waveguide by the spacer layer. The second optical waveguide is evanescently coupled with the first optical waveguide and is configured, in conjunction with the first waveguide, to selectively propagate only a first mode of a plurality of optical modes. The SFW emitter further comprises an optically active region disposed in one of the first optical waveguide and the second optical waveguide.

Abstract: The structures and methods described include an inverted slab-coupled optical waveguide (SCOW) structure, which inverts the polarity of a typical SCOW diode and includes an active region located at an inverted side of the slab section of the inverted SCOW. The inverted SCOWs provide for easily adjustable optical mode confinement or overlap in an active region/gain medium without the risks of generating multiple spatial modes or high electrical resistance associated with traditional non-inverted SCOWs.

Abstract: An optical apparatus comprises a semiconductor substrate and an optical waveguide emitter. The optical waveguide emitter comprises an input waveguide section extending from a facet of the semiconductor substrate, a turning waveguide section optically coupled with the input waveguide section, and an output waveguide section extending to the same facet and optically coupled with the turning waveguide section. One or more of the input waveguide section, the turning waveguide section, and the output waveguide section comprises an optically active region.

Abstract: A laser integrated photonic platform to allow for independent fabrication and development of laser systems in silicon photonics. The photonic platform includes a silicon substrate with an upper surface, one or more through silicon vias (TSVs) defined through the silicon substrate, and passive alignment features in the substrate. The photonic platform includes a silicon substrate wafer with through silicon vias (TSVs) defined through the silicon substrate, and passive alignment features in the substrate for mating the photonic platform to a photonics integrated circuit. The photonic platform also includes a III-V semiconductor material structure wafer, where the III-V wafer is bonded to the upper surface of the silicon substrate and includes at least one active layer forming a light source for the photonic platform.

Abstract: An optical apparatus comprises a semiconductor substrate and a slab-coupled optical waveguide (SCOW) emitter disposed on the semiconductor substrate. The SCOW emitter comprises an optical waveguide comprising: a first region doped with a first conductivity type; a second region doped with a different, second conductivity type; and an optically active region disposed between the first region and the second region. The optically active region comprises a plurality of quantum dots.

Abstract: An optical apparatus comprises a semiconductor substrate and a slab-coupled optical waveguide (SCOW) emitter disposed on the semiconductor substrate. The SCOW emitter comprises an optical waveguide comprising: a first region doped with a first conductivity type; a second region doped with a different, second conductivity type; and an optically active region disposed between the first region and the second region. The optically active region comprises a plurality of quantum dots.

Abstract: An optical apparatus comprises a semiconductor substrate, and a supermode filtering waveguide (SFW) emitter disposed on the semiconductor substrate. The SFW emitter comprises a first optical waveguide, a spacer layer, and a second optical waveguide spaced apart from the first optical waveguide by the spacer layer. The second optical waveguide is evanescently coupled with the first optical waveguide and is configured, in conjunction with the first waveguide, to selectively propagate only a first mode of a plurality of optical modes. The SFW emitter further comprises an optically active region disposed in one of the first optical waveguide and the second optical waveguide.

Abstract: An optical apparatus comprises a semiconductor substrate, and a supermode filtering waveguide (SFW) emitter disposed on the semiconductor substrate. The SFW emitter comprises a first optical waveguide, a spacer layer, and a second optical waveguide spaced apart from the first optical waveguide by the spacer layer. The second optical waveguide is evanescently coupled with the first optical waveguide and is configured, in conjunction with the first waveguide, to selectively propagate only a first mode of a plurality of optical modes. The SFW emitter further comprises an optically active region disposed in one of the first optical waveguide and the second optical waveguide.

Abstract: An optical apparatus comprises a semiconductor substrate and a slab-coupled optical waveguide (SCOW) emitter disposed on the semiconductor substrate. The SCOW emitter comprises an optical waveguide comprising: a first region doped with a first conductivity type; a second region doped with a different, second conductivity type; and an optically active region disposed between the first region and the second region. The optically active region comprises a plurality of quantum dots.

Abstract: A master oscillator power amplifier comprises a semiconductor laser formed on a substrate and configured to output an optical signal, and a semiconductor optical amplifier (SOA) formed on the substrate. The SOA comprises an optical waveguide having an optically active region, wherein the optical waveguide is configured to expand a mode size of the optical signal along at least two dimensions.

Abstract: Described herein is a two chip photonic device (e.g., a hybrid master oscillator power amplifier (MOPA)) where a gain region and optical amplifier region are formed on a III-V chip and a variable reflector (which in combination with the gain region forms a laser cavity) is formed on a different semiconductor chip that includes silicon, silicon nitride, lithium niobate, or the like. Sides of the two chips are disposed in a facing relationship so that optical signals can transfer between the gain region, the variable reflector, and the optical amplifier.

Abstract: A quantum dot comb laser, is provided that comprises a first waveguide having a first width; and a second waveguide running above the first waveguide that includes: a quantum dot layer; a first region of a second width less than the first width; a second region connected to the first region and comprising a reflective grating; and a third region connected at a first end to the second region and at a second end to an output surface wherein the third region tapers from the second width at the first end to a third width, less than the second width, at the second end.

Abstract: A laser integrated photonic platform to allow for independent fabrication and development of laser systems in silicon photonics. The photonic platform includes a silicon substrate with an upper surface, one or more through silicon vias (TSVs) defined through the silicon substrate, and passive alignment features in the substrate. The photonic platform includes a silicon substrate wafer with through silicon vias (TSVs) defined through the silicon substrate, and passive alignment features in the substrate for mating the photonic platform to a photonics integrated circuit. The photonic platform also includes a III-V semiconductor material structure wafer, where the III-V wafer is bonded to the upper surface of the silicon substrate and includes at least one active layer forming a light source for the photonic platform.

Abstract: A quantum dot comb laser, is provided that comprises a first waveguide having a first width; and a second waveguide running above the first waveguide that includes: a quantum dot layer; a first region of a second width less than the first width; a second region connected to the first region and comprising a reflective grating; and a third region connected at a first end to the second region and at a second end to an output surface wherein the third region tapers from the second width at the first end to a third width, less than the second width, at the second end.

Abstract: The present disclosure provides for laser integration into photonic platforms in which a first wafer, including a first substrate and a first insulator that includes a first plurality of dies that each include a first set of optical waveguides, is bonded to a second wafer, including a second substrate and a second insulator that includes a second plurality of dies that each include a second set of optical waveguides. The bond between the two wafers defines a wafer bond interface joining the first insulator with the second insulator and vertically aligning the first plurality of dies with the second plurality of dies such that respective first sets of optical waveguides are optically coupled with respective second sets of optical waveguides.

Abstract: Embodiments provide for selective-area growth of III-V materials for integration with silicon photonics. The resulting platform includes a substrate; an insulator, extending a first distance from the substrate, including a passive optical component at a second distance from the substrate less than the first distance, and defining a pit extending to the substrate; and a III-V component, extending from the substrate within in the pit defined in the insulator, the III-V component including a gain medium included at the second distance from the substrate and optically coupled with the passive optical component. The pit may define an Optical Coupling Interface between the III-V component and the passive optical component, or a slit defined between the III-V component and the passive optical component may define the Optical Coupling Interface.

Abstract: A laser integrated photonic platform to allow for independent fabrication and development of laser systems in silicon photonics. The photonic platform includes a silicon substrate with an upper surface, one or more through silicon vias (TSVs) defined through the silicon substrate, and passive alignment features in the substrate. The photonic platform includes a silicon substrate wafer with through silicon vias (TSVs) defined through the silicon substrate, and passive alignment features in the substrate for mating the photonic platform to a photonics integrated circuit. The photonic platform also includes a III-V semiconductor material structure wafer, where the III-V wafer is bonded to the upper surface of the silicon substrate and includes at least one active layer forming a light source for the photonic platform.

Abstract: Aspects described herein include an optical waveguide emitter that includes a first optical waveguide and a second optical waveguide that are evanescently coupled and collectively configured to selectively propagate only a first mode of a plurality of optical modes. Each of the first optical waveguide and the second optical waveguide extend through an input waveguide section, a turning waveguide section, and an output waveguide section. One or more of the input waveguide section, the turning waveguide section, and the output waveguide section includes an optically active region. The optical waveguide emitter further includes a refractive index-increasing feature in the turning waveguide section.

Abstract: Aspects described herein include an optical waveguide emitter that includes a first optical waveguide and a second optical waveguide that are evanescently coupled and collectively configured to selectively propagate only a first mode of a plurality of optical modes. Each of the first optical waveguide and the second optical waveguide extend through an input waveguide section, a turning waveguide section, and an output waveguide section. One or more of the input waveguide section, the turning waveguide section, and the output waveguide section includes an optically active region. The optical waveguide emitter further includes a refractive index-increasing feature in the turning waveguide section.