Patents by Inventor Dominic IMBRENDA

Dominic IMBRENDA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MXene layers as substrates for growth of highly oriented perovskite thin films
    Patent number: 11773480
    Abstract: The present disclosure is directed to using MXene compositions as templates for the deposition of oriented perovskite films, and compositions derived from such methods. Certain specific embodiments include methods preparing an oriented perovskite, perovskite-type, or perovskite-like film, the methods comprising: (a) depositing at least one perovskite, perovskite-type, or perovskite-like composition or precursor composition using chemical vapor deposition (CVD), physical vapor deposition (PVD), or atomic layer deposition (ALD) onto a film or layer of a MXene composition supported on a substrate to form a layered composition or precursor composition; and either (b) (1) heat treating or annealing the layered precursor composition to form a layered perovskite-type structure comprising at least one oriented perovskite, perovskite-type, or perovskite-like composition; or (2) annealing the layered composition; or (3) both (1) and (2).
    Type: Grant
    Filed: October 9, 2018
    Date of Patent: October 3, 2023
    Assignee: Drexel University
    Inventors: Zongquan Gu, Babak Anasori, Andrew Lewis Bennett-Jackson, Matthias Falmbigl, Dominic Imbrenda, Yury Gogotsi, Jonathan E. Spanier
  • MXENE LAYERS AS SUBSTRATES FOR GROWTH OF HIGHLY ORIENTED PEROVSKITE THIN FILMS
    Publication number: 20200240000
    Abstract: The present disclosure is directed to using MXene compositions as templates for the deposition of oriented perovskite films, and compositions derived from such methods. Certain specific embodiments include methods preparing an oriented perovskite, perovskite-type, or perovskite-like film, the methods comprising: (a) depositing at least one perovskite, perovskite-type, or perovskite-like composition or precursor composition using chemical vapor deposition (CVD), physical vapor deposition (PVD), or atomic layer deposition (ALD) onto a film or layer of a MXene composition supported on a substrate to form a layered composition or precursor composition; and either (b) (1) heat treating or annealing the layered precursor composition to form a layered perovskite-type structure comprising at least one oriented perovskite, perovskite-type, or perovskite-like composition; or (2) annealing the layered composition; or (3) both (1) and (2).
    Type: Application
    Filed: October 9, 2018
    Publication date: July 30, 2020
    Inventors: Zongquan GU, Babak ANASORI, Andrew Lewis BENNETT-JACKSON, Matthias FALMBIGL, Dominic IMBRENDA, Yury GOGOTSI, Jonathan E. SPANIER