Patents by Inventor Dominic Massetti
Dominic Massetti has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10317733Abstract: An alignment layer for a liquid crystal on silicon (LCOS) display includes a nano-particle layer. In a particular embodiment the nano-particle layer includes a lower nano-layer and an upper nano-layer, each formed onto oxide layers of the LCOS display. In a more particular embodiment, the lower nano-layer and the upper nano-layer are offset printed onto the oxide layers.Type: GrantFiled: October 26, 2016Date of Patent: June 11, 2019Assignee: OmniVision Technologies, Inc.Inventors: Ming Zhang, Yin Qian, Libo Weng, Oray Orkun Cellek, Dyson Hsin-Chih Tai, Lequn Liu, Dominic Massetti
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Patent number: 10283553Abstract: A method of image sensor fabrication includes forming a second semiconductor layer on a back side of a first semiconductor layer. The method also includes forming one or more groups of pixels disposed in a front side of the first semiconductor layer. The one or more groups of pixels include a first portion of pixels separated from the second semiconductor layer by a spacer region, and a second portion of pixels, where a first doped region of the second portion of pixels is in contact with the second semiconductor layer. Pinning wells are also formed and separate individual pixels in the one or more groups of pixels, and the pinning wells extend through the first semiconductor layer. Deep pinning wells are also formed and separate the one or more groups of pixels.Type: GrantFiled: September 27, 2017Date of Patent: May 7, 2019Assignee: OmniVision Technologies, Inc.Inventors: Eric A. G. Webster, Howard E. Rhodes, Dominic Massetti
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Publication number: 20180113336Abstract: An alignment layer for a liquid crystal on silicon (LCOS) display includes a nano-particle layer. In a particular embodiment the nano-particle layer includes a lower nano-layer and an upper nano-layer, each formed onto oxide layers of the LCOS display. In a more particular embodiment, the lower nano-layer and the upper nano-layer are offset printed onto the oxide layers.Type: ApplicationFiled: October 26, 2016Publication date: April 26, 2018Applicant: OmniVision Technologies, Inc.Inventors: Ming Zhang, Yin Qian, Libo Weng, Oray Orkun Cellek, Dyson Hsin-Chih Tai, Lequn Liu, Dominic Massetti
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Publication number: 20180019278Abstract: A method of image sensor fabrication includes forming a second semiconductor layer on a back side of a first semiconductor layer. The method also includes forming one or more groups of pixels disposed in a front side of the first semiconductor layer. The one or more groups of pixels include a first portion of pixels separated from the second semiconductor layer by a spacer region, and a second portion of pixels, where a first doped region of the second portion of pixels is in contact with the second semiconductor layer. Pinning wells are also formed and separate individual pixels in the one or more groups of pixels, and the pinning wells extend through the first semiconductor layer. Deep pinning wells are also formed and separate the one or more groups of pixels.Type: ApplicationFiled: September 27, 2017Publication date: January 18, 2018Inventors: Eric A. G. Webster, Howard E. Rhodes, Dominic Massetti
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Patent number: 9806122Abstract: A pixel array including an SixGey layer disposed on a first semiconductor layer. A plurality of pixels is disposed in the first semiconductor layer. The plurality of pixels includes: (1) a first portion of pixels separated from the SixGey layer by a spacer region and (2) a second portion of pixels including a first doped region in contact with the SixGey layer. The pixel array also includes pinning wells disposed between individual pixels in the plurality of pixels. A first portion of the pinning wells extend through the first semiconductor layer. A second portion of the pinning wells extend through the first semiconductor layer and the SixGey layer.Type: GrantFiled: July 25, 2014Date of Patent: October 31, 2017Assignee: OmniVision Technologies, Inc.Inventors: Eric A. G. Webster, Howard E. Rhodes, Dominic Massetti
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Patent number: 9735196Abstract: A method of fabricating a pixel array includes forming a transistor network along a frontside of a semiconductor substrate. A contact element is formed for every pixel in the pixel array that is electrically coupled to a transistor within the transistor network. An interconnect layer is formed upon the frontside to control the transistor network with a dielectric that covers the contact element. A cavity is formed in the interconnect layer. A conductive layer is formed along cavity walls of the cavity and a dielectric layer is formed over the conductive layer within the cavity. A photosensitive semiconductor material is deposited over the dielectric layer within the cavity. An electrode cavity is formed that extends into the contact element. The electrode cavity is at least partially filled with a conductive material to form an electrode. The electrode, the conductive layer, and the photosensitive semiconductor material form a photosensitive capacitor.Type: GrantFiled: October 5, 2016Date of Patent: August 15, 2017Assignee: OmniVision Technologies, Inc.Inventors: Wu-Zang Yang, Chia-Ying Liu, Chih-Wei Hsiung, Chun-Yung Ai, Dyson H. Tai, Dominic Massetti
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Patent number: 9565405Abstract: A back side illuminated image sensor includes a pixel array including semiconductor material, and image sensor circuitry disposed on a front side of the semiconductor material to control operation of the pixel array. A first pixel includes a first doped region disposed proximate to a back side of the semiconductor material and extends into the semiconductor material a first depth to reach the image sensor circuitry. A second pixel with a second doped region is disposed proximate to the back side of the semiconductor material and extends into the semiconductor material a second depth which is less than the first depth. A third doped region is disposed between the second doped region and the image sensor circuitry on the front side of the semiconductor material. The third doped region is electrically isolated from the first doped region and the second doped region.Type: GrantFiled: February 3, 2015Date of Patent: February 7, 2017Assignee: OmniVision Technologies, Inc.Inventors: Gang Chen, Dominic Massetti, Chih-Wei Hsiung, Arvind Kumar, Yuanwei Zheng, Duli Mao, Dyson H. Tai
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Publication number: 20170025468Abstract: A method of fabricating a pixel array includes forming a transistor network along a frontside of a semiconductor substrate. A contact element is formed for every pixel in the pixel array that is electrically coupled to a transistor within the transistor network. An interconnect layer is formed upon the frontside to control the transistor network with a dielectric that covers the contact element. A cavity is formed in the interconnect layer. A conductive layer is formed along cavity walls of the cavity and a dielectric layer is formed over the conductive layer within the cavity. A photosensitive semiconductor material is deposited over the dielectric layer within the cavity. An electrode cavity is formed that extends into the contact element. The electrode cavity is at least partially filled with a conductive material to form an electrode. The electrode, the conductive layer, and the photosensitive semiconductor material form a photosensitive capacitor.Type: ApplicationFiled: October 5, 2016Publication date: January 26, 2017Inventors: Wu-Zang Yang, Chia-Ying Liu, Chih-Wei Hsiung, Chun-Yung Ai, Dyson H. Tai, Dominic Massetti
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Patent number: 9526417Abstract: A projector and associated method allows adaptor-less smartphone eye imaging. The projector includes at least two line generators for projecting a pattern onto a face of a subject, and a structure for positioning the line generators relative to a camera of the smartphone. The pattern facilitates positioning of the smartphone relative to the subject's eye such that an image of the eye captured by the camera is optimal for evaluation.Type: GrantFiled: December 7, 2015Date of Patent: December 27, 2016Assignee: OmniVision Technologies, Inc.Inventors: Dominic Massetti, Suganda Jutamulia
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Patent number: 9520439Abstract: An image sensor for capturing X-ray image data and optical image data includes an X-ray absorption layer and a plurality of photodiodes disposed in a semiconductor layer. The X-ray absorption layer is configured to emit photons in response to receiving X-ray radiation. The plurality of photodiodes disposed in the semiconductor layer is optically coupled to receive image light to generate the optical image data, and is optically coupled to receive photons from the X-ray absorption layer to generate X-ray image data.Type: GrantFiled: September 23, 2013Date of Patent: December 13, 2016Assignee: OmniVision Technologies, Inc.Inventors: Dominic Massetti, Yu Zheng
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Patent number: 9490282Abstract: An image sensor pixel, and image sensor, and a method of fabricating the same is disclosed. The image pixel includes a photosensitive capacitor and a transistor network. The photosensitive capacitor includes an electrode, a conductive layer, a dielectric layer, and a photosensitive semiconductor material. The conductive layer is disposed around the electrode and the dielectric layer is formed between the conductive layer and the electrode. The photosensitive semiconductor material is for generating an image signal in response to image light and is disposed between the dielectric layer and the electrode. The transistor network is coupled to readout the image signal from the electrode of the photosensitive capacitor.Type: GrantFiled: March 19, 2015Date of Patent: November 8, 2016Assignee: OmniVision Technologies, Inc.Inventors: Wu-Zang Yang, Chia-Ying Liu, Chih-Wei Hsiung, Chun-Yung Ai, Dyson H. Tai, Dominic Massetti
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Publication number: 20160276380Abstract: An image sensor pixel, and image sensor, and a method of fabricating the same is disclosed. The image pixel includes a photosensitive capacitor and a transistor network. The photosensitive capacitor includes an electrode, a conductive layer, a dielectric layer, and a photosensitive semiconductor material. The conductive layer is disposed around the electrode and the dielectric layer is formed between the conductive layer and the electrode. The photosensitive semiconductor material is for generating an image signal in response to image light and is disposed between the dielectric layer and the electrode. The transistor network is coupled to readout the image signal from the electrode of the photosensitive capacitor.Type: ApplicationFiled: March 19, 2015Publication date: September 22, 2016Inventors: Wu-Zang Yang, Chia-Ying Liu, Chih-Wei Hsiung, Chun-Yung Ai, Dyson H. Tai, Dominic Massetti
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Publication number: 20160227147Abstract: A back side illuminated image sensor includes a pixel array including semiconductor material, and image sensor circuitry disposed on a front side of the semiconductor material to control operation of the pixel array. A first pixel includes a first doped region disposed proximate to a back side of the semiconductor material and extends into the semiconductor material a first depth to reach the image sensor circuitry. A second pixel with a second doped region is disposed proximate to the back side of the semiconductor material and extends into the semiconductor material a second depth which is less than the first depth. A third doped region is disposed between the second doped region and the image sensor circuitry front side of the semiconductor material. The third doped region is electrically isolated from the first doped region and the second doped region.Type: ApplicationFiled: February 3, 2015Publication date: August 4, 2016Inventors: Gang Chen, Dominic Massetti, Chih-Wei Hsiung, Arvind Kumar, Yuanwei Zheng, Duli Mao, Dyson H. Tai
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Patent number: 9406718Abstract: A pixel cell includes a photodiode coupled to photogenerate image charge in response to incident light. A deep trench isolation structure is disposed proximate to the photodiode to provide a capacitive coupling to the photodiode through the deep trench isolation structure. An amplifier transistor is coupled to the deep trench isolation structure to generate amplified image data in response to the image charge read out from the photodiode through the capacitive coupling provided by the deep trench isolation structure. A row select transistor is coupled to an output of the amplifier transistor to selectively output the amplified image data to a column bitline coupled to the row select transistor.Type: GrantFiled: September 29, 2014Date of Patent: August 2, 2016Assignee: OmniVision Technologies, Inc.Inventors: Johannes Solhusvik, Dominic Massetti
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Publication number: 20160116409Abstract: A color-sensitive image sensor with embedded microfluidics includes a silicon substrate having (a) at least one recess partly defining at least one embedded microfluidic channel and (b) a plurality of photosensitive regions for generating position-sensitive electrical signals in response to light from the at least one recess, wherein at least two of the photosensitive regions are respectively located at at least two mutually different depth ranges, relative to the at least one recess, to provide color information. A wafer-level manufacturing method produces a plurality of such color-sensitive image sensors. A method for generating a color image of a fluidic sample includes performing imaging, onto a plurality of photosensitive regions of a silicon substrate, of a fluidic sample deposited in a microfluidic channel embedded in the silicon substrate, and generating color information based upon penetration depth of light into the silicon substrate.Type: ApplicationFiled: October 28, 2014Publication date: April 28, 2016Inventors: Dominic Massetti, Bowei Zhang
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Patent number: 9304741Abstract: Techniques and mechanisms for generating a random number. In an embodiment, a first signal is received from a first cell including a first source follower transistor. Circuit logic detects for a pulse of the first signal and, in response to the pulse, generates a signal indicating detection of a first random telegraph noise event in the first source follower transistor. In another embodiment, a first count update is performed in response to the indicated detection of the first random telegraph noise event. The first count update is one basis for generation of a number corresponding to a plurality of random telegraph noise events.Type: GrantFiled: April 22, 2013Date of Patent: April 5, 2016Assignee: OmniVision Technologies, Inc.Inventors: Dominic Massetti, Gang Chen
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Publication number: 20160093664Abstract: A pixel cell includes a photodiode coupled to photogenerate image charge in response to incident light. A deep trench isolation structure is disposed proximate to the photodiode to provide a capacitive coupling to the photodiode through the deep trench isolation structure. An amplifier transistor is coupled to the deep trench isolation structure to generate amplified image data in response to the image charge read out from the photodiode through the capacitive coupling provided by the deep trench isolation structure. A row select transistor is coupled to an output of the amplifier transistor to selectively output the amplified image data to a column bitline coupled to the row select transistor.Type: ApplicationFiled: September 29, 2014Publication date: March 31, 2016Inventors: Johannes Solhusvik, Dominic Massetti
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Publication number: 20160027837Abstract: A pixel array including an SixGey layer disposed on a first semiconductor layer. A plurality of pixels is disposed in the first semiconductor layer. The plurality of pixels includes: (1) a first portion of pixels separated from the SixGey layer by a spacer region and (2) a second portion of pixels including a first doped region in contact with the SixGey layer. The pixel array also includes pinning wells disposed between individual pixels in the plurality of pixels. A first portion of the pinning wells extend through the first semiconductor layer. A second portion of the pinning wells extend through the first semiconductor layer and the SixGey layer.Type: ApplicationFiled: July 25, 2014Publication date: January 28, 2016Inventors: Eric A. G. Webster, Howard E. Rhodes, Dominic Massetti
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Publication number: 20160011054Abstract: A thermal imaging system with a vacuum-sealing lens cap, includes (a) a thermal image sensor having an array of temperature sensitive pixels for detecting thermal radiation, and (b) a lens sealed to the thermal image sensor for imaging thermal radiation from a scene onto the array of temperature sensitive pixels and sealing a vacuum around the temperature sensitive pixels. A wafer-level method for manufacturing a thermal imaging system with a vacuum-sealing lens cap includes sealing a lens wafer, having a plurality of lenses, to a sensor wafer having a plurality of thermal image sensors each having an array of temperature sensitive pixels, to seal, for each of the plurality of thermal image sensors, a vacuum around the temperature sensitive pixels.Type: ApplicationFiled: July 11, 2014Publication date: January 14, 2016Inventor: Dominic Massetti
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Publication number: 20150085978Abstract: An image sensor for capturing X-ray image data and optical image data includes an X-ray absorption layer and a plurality of photodiodes disposed in a semiconductor layer. The X-ray absorption layer is configured to emit photons in response to receiving X-ray radiation. The plurality of photodiodes disposed in the semiconductor layer is optically coupled to receive image light to generate the optical image data, and is optically coupled to receive photons from the X-ray absorption layer to generate X-ray image data.Type: ApplicationFiled: September 23, 2013Publication date: March 26, 2015Applicant: OMNIVISION TECHNOLOGIES, INC.Inventors: Dominic Massetti, Yu Zheng