Abstract: Described is a flowable preparation for depositing a passivation layer on an organic electronic (OE) device containing an organic layer; the organic layer is selected from an organic semiconductor (OSC) layer and an organic gate insulator (OGI) layer; the preparation comprises a passivating material and a solvent; the solvent includes lactate and/or derivatives thereof. Further described are an OE device and a manufacture method therefor.

Abstract: A semiconducting composition comprising a semiconducting polymer and a semiconducting non-polymeric polycyclic compound, wherein the semiconducting polymer comprises units of A and/or B: wherein R1, R2, R5, R6, R7, R8, x, y, p, q, r, R3, R4, R9, R10 and R11 have any of the meanings defined in the description.

Abstract: A semiconducting composition comprising a semiconducting polymer and a semiconducting non-polymeric polycyclic compound, wherein the semiconducting polymer comprises units of A and/or B: wherein R1, R2, R5, R6, R7, R8, x, y, p, q, r, R3, R4, R9, R10 and R11 have any of the meanings defined in the description.

Abstract: A semiconductor composition which comprises a soluble polyacene semiconductor and a polymeric semiconducting binder the binder having a permittivity greater than 3.4 at 000 Hz. The charge mobility of the semiconducting binder when measured in a pure state is greater than 10?7 cm2/Vs and more preferably greater than 10?6 cm2/Vs. Organic thin film transistors in which the source and drain electrodes are bridged by the semiconductor composition have desirable properties of reproducibility and charge mobility. The organic semiconducting composition can be applied by solution coating.

Abstract: A semiconductor composition which comprises a soluble polyacene semiconductor and a polymeric semiconducting binder the binder having a permittivity greater than 3.4 at 000 Hz. The charge mobility of the semiconducting binder when measured in a pure state is greater than 10?7 cm2/Vs and more preferably greater than 10?6 cm2/Vs. Organic thin film transistors in which the source and drain electrodes are bridged by the semiconductor composition have desirable properties of reproducibility and charge mobility. The organic semiconducting composition can be applied by solution coating.

Abstract: A semiconductor composition which comprises a soluble polyacene semiconductor and a polymeric semiconducting binder the binder having a permittivity greater than 3.4 at 000 Hz. The charge mobility of the semiconducting binder when measured in a pure state is greater than 10?7 cm2/Vs and more preferably greater than 10?6 cm2/Vs. Organic thin film transistors in which the source and drain electrodes are bridged by the semiconductor composition have desirable properties of reproducibility and charge mobility. The organic semiconducting composition can be applied by solution coating.

Abstract: This invention comprises a semiconducting polymer having a permittivity greater than 3.4 at 1000 Hz and a charge mobility in the pure state greater than 10?7 cm2V?1s?1 and more preferably greater than 10?6 cm2V?1s?1. Preferred polymers include repeating units of triarylamines which have specific cyano and/or alkoxy substitution. They are suitable for use in electronic components such as organic thin film transistors.

Abstract: A semiconductor composition which comprises a soluble polyacene semiconductor and a polymeric semiconducting binder the binder having a permittivity greater than 3.4 at 000 Hz. The charge mobility of the semiconducting binder when measured in a pure state is greater than 10?7 cm2/Vs and more preferably greater than 10?6 cm2/Vs. Organic thin film transistors in which the source and drain electrodes are bridged by the semiconductor composition have desirable properties of reproducibility and charge mobility. The organic semiconducting composition can be applied by solution coating.

Abstract: This invention comprises a semiconducting polymer having a permittivity greater than 3.4 at 1000 Hz and a charge mobility in the pure state greater than 10?7 cm2V?1s?1 and more preferably greater than 10?6 cm2V?1s?1. Preferred polymers include repeating units of triarylamines which have specific cyano and/or alkoxy substitution. They are suitable for use in electronic components such as organic thin film transistors.

Abstract: The invention relates to a process for preparing an electronic device using a protection layer, and to improved electronic devices prepared by this process, in particular organic field effect transistors (OFETs).

Abstract: An organic semiconducting layer formulation containing an organic binder which has a permittivity, ?, at 1,000 Hz of 3.3 or less and a polyacene compound of Formula A: and processes for the preparation thereof and uses thereof in various electronic devices.

Abstract: The invention relates to an improved electronic device, like an organic field emission transistor (OFET), which has a short source to drain channel length and contains an organic semiconducting formulation comprising a semiconducting binder.

Abstract: An organic semiconducting layer formulation containing an organic binder which has a permittivity, ?, at 1,000 Hz of 3.3 or less and a polyacene compound of Formula A: and processes for the preparation thereof and uses thereof in various electronic devices.

Abstract: A compound of formula 8 and uses thereof in various electronic devices and in a formulation for ink jet printing and in an organic semiconducting layer formulation.

Abstract: An organic semiconducting layer formulation containing an organic binder which has a permittivity, ?, at 1,000 Hz of 3.3 or less and a polyacene compound of Formula A: and processes for the preparation thereof and uses thereof in various electronic devices.

Abstract: This invention relates to organic light emitting diodes (OLEDs) and to methods for their manufacture. The invention provides an OLED element or display which enables contrast to be produced in an image. In accordance with the invention a layer of ink is patterned as a blocking layer between two OLED layers. The ink reduces or prevents conduction, i.e. movement of charge, between the two OLED layers in that area of the device. The ink may be dark in color, e.g. black, to increase the contrast ratio of the OLED. The blocking layer is provided between any two layers in the OLED and blocks the charge movement in these areas. The blocking layer may comprise a multiplicity of ink dots, the density of which determines the extent to which conduction is hindered. The blocking layer may be produced as a “grey-scale” pattern wherein the density of dots is varied across the pattern.

Abstract: A composition for use as an organic semiconducting (OSC) material, the composition comprising: (i) at least one higher molecular weight organic semiconducting compound having a number average molecular weight (Mn) of at least 5000, and (ii) at least one lower molecular weight organic semiconducting compound having a number average molecular weight (Mn) of 1000 or less. Use of the composition in an electronic device, e.g. FET or OLED.

Abstract: The invention relates to a process for preparing an electronic device using a protection layer, and to improved electronic devices prepared by this process, in particular organic field effect transistors (OFETs).

Abstract: The present invention relates to a process for reducing the mobility of an semiconductor (OSC) layer in an electronic device, which has a semiconducting channel area, in specific areas outside said channel area by applying an oxidzing agent to the OSC layer.

Abstract: A compound of formula 9 and uses thereof in various electronic devices and in a formulation for ink jet printing and in an organic semiconducting layer formulation.