Patents by Inventor Dominik KUFER

Dominik KUFER has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • OPTOELECTRONIC APPARATUS AND FABRICATION METHOD OF THE SAME
    Publication number: 20230231063
    Abstract: An optoelectronic apparatus, such as a photodetector apparatus comprising a substrate (1), a dielectric layer (2), a transport layer, and a photosensitizing layer (5). The transport layer comprises at least a 2-dimensional semiconductor 5 layer (3), and the photosensitizing layer (5) comprises colloidal quantum dots. Enhanced responsivity and extended spectral coverage are achieved with the disclosed structures.
    Type: Application
    Filed: November 14, 2022
    Publication date: July 20, 2023
    Applicant: FUNDACIÓ INSTITUT DE CIÈNCIES FOTÒNIQUES
    Inventors: Gerasimos Konstantatos, Frank Koppens, Dominik Kufer, Ivan Nikitskiy
  • Optoelectronic apparatus with a photoconductive gain
    Patent number: 11527662
    Abstract: An optoelectronic apparatus, such as a photodetector apparatus comprising a substrate (1), a dielectric layer (2), a transport layer, and a photosensitizing layer (5). The transport layer comprises at least a 2-dimensional semiconductor layer (3), such as MoS2, and the photosensitizing layer (5) comprises colloidal quantum dots. Enhanced responsivity and extended spectral coverage are achieved with the disclosed structures.
    Type: Grant
    Filed: July 15, 2015
    Date of Patent: December 13, 2022
    Assignee: FUNDACIÓ INSTITUT DE CIÈNCIES FOTÔNIQUES
    Inventors: Gerasimos Konstantatos, Frank Koppens, Dominik Kufer, Ivan Nikitskiy
  • OPTOELECTRONIC APPARATUS AND FABRICATION METHOD OF THE SAME
    Publication number: 20160020352
    Abstract: An optoelectronic apparatus, such as a photodetector apparatus comprising a substrate (1), a dielectric layer (2), a transport layer, and a photosensitizing layer (5). The transport layer comprises at least a 2-dimensional semiconductor layer (3), such as MoS2, and the photosensitizing layer (5) comprises colloidal quantum dots. Enhanced responsivity and extended spectral coverage are achieved with the disclosed structures.
    Type: Application
    Filed: July 15, 2015
    Publication date: January 21, 2016
    Applicant: Fundació Institut de Ciéncies Fotóniques
    Inventors: Gerasimos Konstantatos, Frank KOPPENS, Dominik KUFER, Ivan NIKITSKIY