Abstract: A method is provided for manufacturing an integrated electronic component arranged on a substrate wafer. According to the method, at least one metallization step is performed, and a value of an electrical parameter of the integrated electronic component is determined after the at least one metallization step. A subsequent metallization step is performed after determining the value of the electrical parameter. The subsequent metallization step is performed using an adjustment mask chosen from n predefined masks based on a desired value of the electrical parameter, so as to obtain the desired value of the electrical parameter of the integrated electronic component after manufacturing. In one preferred embodiment, a series of electrical tests is performed on the wafer using test equipment, and the value of the electrical parameter is determined using the same test equipment as is used to perform the series of electrical tests.

Abstract: The invention concerns a method for making an integrated electronic component arranged on a substrate wafer comprising at least two met allising steps. The invention is characterised in that the value of an electrical parameter of the component is determined after a metallising step, and one of the following metallising processes is carried out with an adjusting mask selected among n predefined masks to obtain a desired value of the parameter, the selection of the adjusting mask being performed in accordance with the predetermined value of the electrical parameter.