Patents by Inventor Dominique Sarti

Dominique Sarti has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for producing semi-conditioning material wafers by moulding and directional crystallization
    Patent number: 7601618
    Abstract: Wafers of semi-conducting material are formed by moulding and directional crystallization from a liquid mass of this material. A seed, situated at the bottom of the crucible, presents an orientation along non-dense crystallographic planes. The mould is filled with the molten semi-conducting material by means of a piston or by creation of a pressure difference in the device. The mould is preferably coated with a non-wettable anti-adhesive deposit.
    Type: Grant
    Filed: June 24, 2008
    Date of Patent: October 13, 2009
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Beatrice Drevet, Dominique Sarti, Denis Camel, Jean-Paul Garandet
  • Method for producing semi-conducting material wafers by moulding and directional crystallization
    Publication number: 20090004835
    Abstract: Wafers of semi-conducting material are formed by moulding and directional crystallization from a liquid mass of this material. A seed, situated at the bottom of the crucible, presents an orientation along non-dense crystallographic planes. The mould is filled with the molten semi-conducting material by means of a piston or by creation of a pressure difference in the device. The mould is preferably coated with a non-wettable anti-adhesive deposit.
    Type: Application
    Filed: June 24, 2008
    Publication date: January 1, 2009
    Applicant: COMMISSARIAT A L' ENERGIE ATOMIQUE
    Inventors: Beatrice Drevet, Dominique Sarti, Denis Camel, Jean-Paul Garandet
  • Solar cell including multi-crystalline silicon and a method of texturizing the surface of p-type multi-crystalline silicon
    Patent number: 5949123
    Abstract: A solar cell comprising multi-crystalline silicon or an alloy thereof, having a surface that is to receive light radiation, wherein said silicon surface includes a multi-tude of pits of depth lying in the range 0.10 .mu.m to 10 .mu.m and of diameter lying in the range 0.1 .mu.m to 10 .mu.m, and in which the ratio of said depth to said diameter is greater than 1, the area of said holes occupying more than half the area of said silicon surface.
    Type: Grant
    Filed: November 12, 1996
    Date of Patent: September 7, 1999
    Assignee: Photowatt International S.A.
    Inventors: Quang Nam Le, Dominique Sarti, Claude Levy-Clement, Stephane Bastide