Abstract: The ferroelectric thin film is formed from a liquid composition by the sol-gel processing which has a large amount of polarization, remarkably improved retention and imprint characteristics as compared with a PZT, minute grains and fine film quality, homogeneous electrical properties, and low leakage currents and which is suited for nonvolatile memories. The ferroelectric thin film of the present invention comprising a metal oxide represented by the general formula: (PbV CaW SrX LaY)(ZrZ Ti1−Z)O3, wherein 0.9≦V≦1.3, 0≦W≦0.1, 0≦X≦0.1, 0<Y≦0.1, 0<Z≦0.

Abstract: The ferroelectric thin film is formed from a liquid composition by the sol-gel processing which has a large amount of polarization, remarkably improved retention and imprint characteristics as compared with a PZT, minute grains and fine film quality, homogeneous electrical properties, and low leakage currents and which is suited for nonvolatile memories. The ferroelectric thin film of the present invention comprising a metal oxide represented by the general formula: (Pbv Caw SrX LaY)(ZrZ Ti1−Z)O3, wherein 0.9≦V≦1.3, 0≦W≦0.1, 0≦X≦0.1, 0<Y≦0.1, 0<Z≦0.

Abstract: A lead zirconate titanate ferroelectric film used as the dielectric layer in a ferroelectric capacitor is doped with calcium and/or strontium, and the lead composition selected to improve data retention performance. The chemical formula for the ferroelectric film is: (Pb.sub.v Ca.sub.w Sr.sub.x La.sub.y)(Zr.sub.z Ti.sub.(1-z))O.sub.3 ; wherein v is ideally between 0.9 and 1.3; w is ideally between 0 and 0.1; x is ideally between 0 and 0.1; y is ideally between 0 and 0.1, and z is ideally between 0 and 0.9. In addition, the chemical composition of the ferroelectric film is further specified in that the measured opposite state charge at a specific time and temperature of the ferroelectric capacitor is greater than eight micro-Coulombs per square centimeter, and the rate of imprint degradation is less than fifteen percent per decade.

Abstract: A lead zirconate titanate ferroelectric film used as the dielectric layer in a ferroelectric capacitor is doped with calcium and/or strontium, and the lead composition selected to improve data retention performance. The chemical formula for the ferroelectric film is: (Pb.sub.v Ca.sub.w Sr.sub.x La.sub.y)(Zr.sub.z Ti.sub.(1-z))O.sub.3 ; wherein v is ideally between 0.9 and 1.3; w is ideally between 0 and 0.1; x is ideally between 0 and 0.1; y is ideally between 0 and 0.1, and z is ideally between 0 and 0.9. In addition, the chemical composition of the ferroelectric film is further specified in that the measured opposite state charge at a specific time and temperature of the ferroelectric capacitor is greater than eight micro-Coulombs per square centimeter, and the rate of imprint degradation is less than fifteen percent per decade.