Abstract: An ion implanter and an ion implant method are disclosed. Essentially, the wafer is moved along one direction and an aperture mechanism having an aperture is moved along another direction, so that the projected area of an ion beam filtered by the aperture is two-dimensionally scanned over the wafer. Thus, the required hardware and/or operation to move the wafer may be simplified. Further, when a ribbon ion beam is provided, the shape/size of the aperture may be similar to the size/shape of a traditional spot beam, so that a traditional two-dimensional scan may be achieved. Optionally, the ion beam path may be fixed without scanning the ion beam when the ion beam is to be implanted into the wafer, also the area of the aperture may be adjustable during a period of moving the aperture across the ion beam.

Abstract: A variable aperture within an aperture device is used to shape the ion beam before the substrate is implanted by shaped ion beam, especially to finally shape the ion beam in a position right in front of the substrate. Hence, different portions of a substrate, or different substrates, can be implanted respectively by different shaped ion beams without going through using multiple fixed apertures or retuning the ion beam each time. In other words, different implantations may be achieved respectively by customized ion beams without high cost (use multiple fixed aperture devices) and complex operation (retuning the ion beam each time). Moreover, the beam tune process for acquiring a specific ion beam to be implanted may be accelerated, to be faster than using multiple fixed aperture(s) and/or retuning the ion beam each time, because the adjustment of the variable aperture may be achieved simply by mechanical operation.

Abstract: A method capable of monitoring ion implantation. First, an ion beam and a workpiece are provided. Next, implant the workpiece by the ion beam and generate a profile having numerous signals relevant to respectively numerous relative positions between the ion beam and the workpiece, wherein the profile has at least a higher portion, a gradual portion and a lower portion. Therefore, by directly analyzing the profile without referring to a pre-determined profile and without using a profiler measuring the ion beam, some ion beam information may be acquired, such as beam height, beam width, ion beam current distribution on the ion beam cross-section, and so on, and the ion implantation may be monitored real-timely. Furthermore, when numerous workpieces are implanted in sequence, the profile(s) of one or more initially implanted workpiece(s) may be to generate a reference for calibrating the ion implantation of the following workpieces.

Abstract: Initially, an ion beam is formed as an elongated shape incident on a wafer, where the shape has a length along a first axis longer than a diameter of the wafer, and a width along a second axis shorter than the diameter of the wafer. Then, a center of the wafer is moved along a scan path intersecting the ion beam at a movement velocity, and the wafer is rotated around at a rotation velocity simultaneously. During the simultaneous movement and rotation, the wafer is totally overlapped with the ion beam along the first axis when the wafer intersects with the ion beam, and the rotation velocity is at most a few times of the movement velocity. Both the movement velocity and the rotation velocity can be a constant or have a velocity profile relative to a position of the ion beam across the wafer.

Abstract: A method capable of monitoring ion implantation. First, an ion beam and a workpiece are provided. Next, implant the workpiece by the ion beam and generate a profile having numerous signals relevant to respectively numerous relative positions between the ion beam and the workpiece, wherein the profile has at least a higher portion, a gradual portion and a lower portion. Therefore, by directly analyzing the profile without referring to a pre-determined profile and without using a profiler measuring the ion beam, some ion beam information may be acquired, such as beam height, beam width, ion beam current distribution on the ion beam cross-section, and so on, and the ion implantation may be monitored real-timely. Furthermore, when numerous workpieces are implanted in sequence, the profile(s) of one or more initially implanted workpiece(s) may be to generate a reference for calibrating the ion implantation of the following workpieces.

Abstract: A current branch circuit is electrically coupled with a Faraday cup and an operation amplifier separately. The Faraday cup, the current branch circuit and the operation amplifier are formed as a portion of an ion implanter. When the Faraday cup is electrically coupled with a ground through a conductive structure formed by an ion beam received by the Faraday cup, a current flows from the output of the operation amplifier to the current branch circuit to balance another current flow from the current branch circuit through the Faraday cup to the ground. By dynamically monitoring the voltage of the output of the operation amplifier, current flows through the Faraday cup to the ground and through the resistance of the conductive structure can be dynamically monitored. Accordingly, the difference between the ion current measured by the Faraday cup and the real ion current implanted to the wafer can be dynamically acquired to avoid overdosage of the wafer with the ion beam.

Abstract: A variable aperture within an aperture device is used to shape the ion beam before the substrate is implanted by shaped ion beam, especially to finally shape the ion beam in a position right in front of the substrate. Hence, different portions of a substrate, or different substrates, can be implanted respectively by different shaped ion beams without going through using multiple fixed apertures or retuning the ion beam each time. In other words, different implantations may be achieved respectively by customized ion beams without high cost (use multiple fixed aperture devices) and complex operation (retuning the ion beam each time). Moreover, the beam tune process for acquiring a specific ion beam to be implanted may be accelerated, to be faster than using multiple fixed aperture(s) and/or retuning the ion beam each time, because the adjustment of the variable aperture may be achieved simply by mechanical operation.

Abstract: An ion implanter and an ion implant method for achieving a two-dimensional implantation on a wafer are disclosed. The ion implanter includes an ion source, a mass analyzer, a wafer driving mechanism, an aperture mechanism, and an aperture driving mechanism. The ion source and the mass analyzer are capable of providing an ion beam. The wafer driving mechanism is configured to drive a wafer along only a first direction. The aperture mechanism has an aperture for filtering the ion beam before the wafer is implanted. The aperture driving mechanism is configured to drive the aperture along a second direction intersecting the first direction. By moving the wafer and the aperture along different directions separately, the projection of the ion beam can achieve a two-dimensional implantation on the wafer. Here, at least one of the directions is optionally parallel to the longer dimension of the two-dimensional cross-section of the ion beam.

Abstract: Initially, an ion beam is formed as an elongated shape incident on a wafer, where the shape has a length along a first axis longer than a diameter of the wafer, and a width along a second axis shorter than the diameter of the wafer. Then, a center of the wafer is moved along a scan path intersecting the ion beam at a movement velocity, and the wafer is rotated around at a rotation velocity simultaneously. During the simultaneous movement and rotation, the wafer is totally overlapped with the ion beam along the first axis when the wafer intersects with the ion beam, and the rotation velocity is at most a few times of the movement velocity. Both the movement velocity and the rotation velocity can be a constant or have a velocity profile relative to a position of the ion beam across the wafer.

Abstract: A current branch circuit is electrically coupled with a Faraday cup and an operation amplifier separately. The Faraday cup, the current branch circuit and the operation amplifier are formed as a portion of an ion implanter. When the Faraday cup is electrically coupled with a ground through a conductive structure formed by an ion beam received by the Faraday cup, a current flows from the output of the operation amplifier to the current branch circuit to balance another current flow from the current branch circuit through the Faraday cup to the ground. By dynamically monitoring the voltage of the output of the operation amplifier, current flows through the Faraday cup to the ground and through the resistance of the conductive structure can be dynamically monitored. Accordingly, the difference between the ion current measured by the Faraday cup and the real ion current implanted to the wafer can be dynamically acquired to avoid overdosage of the wafer with the ion beam.