Patents by Inventor Don D. Smith

Don D. Smith has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Real-space charge-transfer device and method thereof
    Patent number: 9385321
    Abstract: A real-space charge-transfer device is disclosed. In particular, a Gunn diode is disclosed having a conductive structure fabricated overlying its active region. A secondary signal, other than the normal Gunn diode signal, is generated by the Gunn diode based upon a characteristic of the overlying conductive structure. For example, when the conductive structure is a grate having N teeth the secondary signal will have N secondary oscillation cycles that occur during the duration of a single normal Gunn diode oscillation cycle.
    Type: Grant
    Filed: December 17, 2014
    Date of Patent: July 5, 2016
    Assignee: Freescale Semiconductor, Inc.
    Inventor: Don D. Smith
  • REAL-SPACE CHARGE-TRANSFER DEVICE AND METHOD THEREOF
    Publication number: 20160181523
    Abstract: A real-space charge-transfer device is disclosed. In particular, a Gunn diode is disclosed having a conductive structure fabricated overlying its active region. A secondary signal, other than the normal Gunn diode signal, is generated by the Gunn diode based upon a characteristic of the overlying conductive structure. For example, when the conductive structure is a grate having N teeth the secondary signal will have N secondary oscillation cycles that occur during the duration of a single normal Gunn diode oscillation cycle.
    Type: Application
    Filed: December 17, 2014
    Publication date: June 23, 2016
    Applicant: FREESCALE SEMICONDUCTOR, INC.
    Inventor: Don D. Smith
  • Method of forming a dielectric film
    Patent number: 5763021
    Abstract: The present invention relates to a method of forming a dielectric film, a semiconductor device comprising the same, a method of operating a plasma enhanced chemical vapor deposition apparatus and a method of manufacturing a semiconductor device comprising the dielectric film.
    Type: Grant
    Filed: December 13, 1996
    Date of Patent: June 9, 1998
    Assignee: Cypress Semiconductor Corporation
    Inventors: Andrew W. Young, Don D. Smith