Abstract: Compositions and methods for planarizing or polishing a surface, particularly a semiconductor wafer surface. The polishing compositions described herein comprise (a) a liquid carrier; (b) purified clay; and optional additives, such as (c) a chemical accelerator; and (d) a complexing or coupling agent capable of chemically or ionically complexing with, or coupling to, the metal and/or insulating material removed during the polishing process. The complexing or coupling agent carries away the removed metal and/or silicon dioxide insulator particles, during polishing, to prevent the separated particles from returning to the surface from which they were removed. Also disclosed are methods of planarizing or polishing a surface comprising contacting the surface with the compositions.

Abstract: Compositions and methods for planarizing or polishing a corundum, GaAs, GaP or GaAs/GaP alloy surface, particularly a semiconductor wafer surface. The polishing compositions described herein comprise (a) a liquid carrier; (b) a smectite clay, preferably a sodium smectite clay; and optional additives, such as (c) CeO2, SiO2 and/or Al2O3 abrasive particles, (d) a chemical accelerator; and (e) a complexing or coupling agent capable of chemically or ionically complexing with, or coupling to, the material removed during the polishing process. The optional complexing or coupling agent carries away the removed particles, during polishing, to prevent the separated particles from returning to the surface from which they were removed. Also disclosed are methods of planarizing or polishing corundum, GaAs, GaP and GaAs/GaP alloy surfaces comprising contacting the surface with the compositions.

Abstract: A composition for planarizing or polishing a surface comprising (a) a liquid carrier, and (b) solids comprising about 0.1 to about 10% by weight clay abrasive particles, and about 0.1% to about 50% by weight CeO2 particles, based on the total weight of solids in the composition, said clay and CeO2 abrasive particles having a particle size such that at least 90% of the particles (by number), when slurried in water, have a particle size in the range of about 10 nm to about 10 ?m.

Abstract: Compositions and methods for planarizing or polishing a surface, particularly a semiconductor wafer surface. The polishing compositions described herein comprise (a) a liquid carrier; (b) purified clay; and optional additives, such as (c) a chemical accelerator; and (d) a complexing or coupling agent capable of chemically or ionically complexing with, or coupling to, the metal and/or insulating material removed during the polishing process. The complexing or coupling agent carries away the removed metal and/or silicon dioxide insulator particles, during polishing, to prevent the separated particles from returning to the surface from which they were removed. Also disclosed are methods of planarizing or polishing a surface comprising contacting the surface with the compositions.

Abstract: A composition for planarizing or polishing a surface comprising (a) a liquid carrier, and (b) solids comprising about 0.1 to about 10% by weight clay abrasive particles, and about 0.1% to about 50% by weight CeO2 particles, based on the total weight of solids in the composition, said clay and CeO2 abrasive particles having a particle size such that at least 90% of the particles (by number), when slurried in water, have a particle size in the range of about 10 nm to about 10 ?m.

Abstract: A composition for planarizing or polishing a surface comprising (a) a liquid carrier, and (b) solids comprising about 0.1 to about 10% by weight clay abrasive particles, and about 0.1% to about 50% by weight CeO2 particles, based on the total weight of solids in the composition, said clay and CeO2 abrasive particles having a particle size such that at least 90% of the particles (by number), when slurried in water, have a particle size in the range of about 10 nm to about 10 ?m.

Abstract: Compositions and methods for planarizing or polishing a corundum, GaAs, GaP or GaAs/GaP alloy surface, particularly a semiconductor wafer surface. The polishing compositions described herein comprise (a) a liquid carrier; (b) a smectite clay, preferably a sodium smectite clay; and optional additives, such as (c) CeO2, SiO2 and/or Al2O3 abrasive particles, (d) a chemical accelerator; and (e) a complexing or coupling agent capable of chemically or ionically complexing with, or coupling to, the material removed during the polishing process. The optional complexing or coupling agent carries away the removed particles, during polishing, to prevent the separated particles from returning to the surface from which they were removed. Also disclosed are methods of planarizing or polishing corundum, GaAs, GaP and GaAs/GaP alloy surfaces comprising contacting the surface with the compositions.

Abstract: A fiber-reinforced sealing article disposed between an upper sand mold portion (cope) and lower sand mold portion (drag) to fill in, or correct irregularities in green sand molds. In casting metal shapes in a sand/binder mold, the cope and/or drag mold portions include sand compositions that are not perfectly planar surrounding the mold cavity, leaving one or more areas where the cope and drag are not in contact or otherwise provide a seal surrounding the mold cavity. The fiber-reinforced clay-containing article described herein is disposed between the cope and drag to seal the mold in one or more locations surrounding the mold cavity. The composition described herein is capable of shaping by hand, like modeling clay; and the article is preferably in the form of a continuous rope that is flexible, remains hydrated, and can be cut or broken to a desired length and disposed in area(s) where the cope and drag do not make good mating contact.

Abstract: Compositions and methods for planarizing or polishing a NiP, glass, ceramic or Glass-ceramic surface in the manufacture of a computer memory disk. The polishing compositions described herein comprise (a) a liquid carrier, preferably water; (b) an abrasive; (c) purified clay; and optional additives, such as (d) a chemical accelerator or oxidizing agent; and (e) a complexing or coupling agent capable of chemically or ionically complexing with, or coupling to, the NiP, glass, ceramic, and/or glass-ceramic material removed during the polishing process. The complexing or coupling agent carries away the metal, glass, ceramic and/or glass-ceramic particles removed during polishing, to prevent the separated particles from returning to the surface from which they were removed. Also disclosed are methods of planarizing or polishing a NiP, glass, ceramic and/or glass-ceramic surface comprising contacting the surface with the compositions.

Abstract: Compositions and methods for planarizing or polishing a surface, particularly a semiconductor wafer surface. The polishing compositions described herein comprise (a) a liquid carrier; (b) purified clay; and optional additives, such as (c) a chemical accelerator; and (d) a complexing or coupling agent capable of chemically or ionically complexing with, or coupling to, the metal and/or insulating material removed during the polishing process. The complexing or coupling agent carries away the removed metal and/or silicon dioxide insulator particles, during polishing, to prevent the separated particles from returning to the surface from which they were removed. Also disclosed are methods of planarizing or polishing a surface comprising contacting the surface with the compositions.

Abstract: A foundry sand binder formed by reacting a smectite clay containing exchangeable calcium ions with an acid to enhance the ability of the clay to bind sand in forming a metal casting sand mold. The acid-treated clay is an excellent sand binder for metal casting molds and produces cast metal parts having improved surface finish with the elimination or substantial reduction in carbonaceous, e.g., coal, foundry sand additive, while reducing VOC emissions from the foundry.

Abstract: A foundry sand binder formed by reacting a smectite clay containing exchangeable calcium ions with an acid to enhance the ability of the clay to bind sand in forming a metal casting sand mold. The acid-treated clay is an excellent sand binder for metal casting molds and produces cast metal parts having improved surface finish with the elimination or substantial reduction in carbonaceous, e.g., coal, foundry sand additive, while reducing VOC emissions from the foundry.