Patents by Inventor Don Hitko

Don Hitko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8368119
    Abstract: A process for fabricating an integrated group III nitride structure comprising high electron mobility transistors (HEMTs) and Schottky diodes, and the resulting structure, are disclosed. Integration of vertical junction Schottky diodes is enabled, and the parasitic capacitance and resistance as well as the physical size of the diode are minimized. A process for fabricating an integrated group III nitride structure comprising double-heterostructure field effect transistors (DHFETs) and Schottky diodes and the resulting structure are also disclosed.
    Type: Grant
    Filed: May 19, 2011
    Date of Patent: February 5, 2013
    Assignee: HRL Laboratories, LLC
    Inventors: Louis Luh, Keh-Chung Wang, Wah S. Wong, Miroslav Micovic, David Chow, Don Hitko
  • Patent number: 7989277
    Abstract: A process for fabricating an integrated group III nitride structure comprising high electron mobility transistors (HEMTs) and Schottky diodes, and the resulting structure, are disclosed. Integration of vertical junction Schottky diodes is enabled, and the parasitic capacitance and resistance as well as the physical size of the diode are minimized. A process for fabricating an integrated group III nitride structure comprising double-heterostructure field effect transistors (DHFETs) and Schottky diodes and the resulting structure are also disclosed.
    Type: Grant
    Filed: September 11, 2007
    Date of Patent: August 2, 2011
    Assignee: HRL Laboratories, LLC
    Inventors: Louis Luh, Keh-Chung Wang, Wah S. Wong, Miroslav Micovic, David Chow, Don Hitko