Abstract: A semiconductor device is provided. The semiconductor device comprising a multi-channel active pattern on a substrate, a high dielectric constant insulating layer formed along the multi-channel active pattern on the multi-channel active pattern, wherein the high dielectric constant insulating layer comprises a metal, a silicon nitride layer formed along the high dielectric constant insulating layer on the high dielectric constant insulating layer and a gate electrode on the silicon nitride layer.

Abstract: A semiconductor device including: a first transistor which include a first gate stack on a substrate; and a second transistor which includes a second gate stack on the substrate, wherein the first gate stack includes a first ferroelectric material layer disposed on the substrate, a first work function layer disposed on the first ferroelectric material layer and a first upper gate electrode disposed on the first work function layer, wherein the second gate stack includes a second ferroelectric material layer disposed on the substrate, a second work function layer disposed on the second ferroelectric material layer and a second upper gate electrode disposed on the second work function layer, wherein the first work function layer includes the same material as the second work function layer, and wherein an effective work function of the first gate stack is different from an effective work function of the second gate stack.

Abstract: A semiconductor device includes a redundancy control signal generation circuit configured to generate a redundancy control signal by determining whether a row address for an active operation has been repaired through a soft post package repair operation and determining whether a row hammer phenomenon has occurred with respect to the row address. The semiconductor device also includes a first selection address generation circuit configured to generate a first selection address for driving a sub word line or a redundancy word line from one of a repair address and a first internal address, based on the redundancy control signal. The semiconductor device further includes a second selection address generation circuit configured to generate a second selection address for driving the sub word line or the redundancy word line from one of a fixed address and a second internal address, based on the redundancy control signal.

Abstract: The present invention relates to a sewage discharge device of a variable water-saving toilet, the device discharging sewage in a bowl to the outside by the load of an auxiliary tank, when a part of tap water branches off from a tap water inflow path such that the tap water stored in the auxiliary tank provided around the outer periphery of a sewage discharge pipe of the toilet reaches a predetermined amount or more.

Abstract: A semiconductor device includes a delay time adjustment circuit and an address input circuit. The delay time adjustment circuit adjusts a point in time when charges are supplied to internal nodes according to a voltage level of a back-bias voltage in response to a test mode signal. The delay time adjustment circuit also delays an active signal by a first delay time varying according to amounts of charge of the internal nodes to generate a bank selection signal. The address input circuit is driven by the back-bias voltage. The address input circuit receives an address in response to the bank selection signal to generate an internal address. The address input circuit delays the address by a second delay time varying according to a voltage level of the back-bias voltage.

Abstract: A semiconductor device includes a delay time adjustment circuit and an address input circuit. The delay time adjustment circuit adjusts a point in time when charges are supplied to internal nodes according to a voltage level of a back-bias voltage in response to a test mode signal. The delay time adjustment circuit also delays an active signal by a first delay time varying according to amounts of charge of the internal nodes to generate a bank selection signal. The address input circuit is driven by the back-bias voltage. The address input circuit receives an address in response to the bank selection signal to generate an internal address. The address input circuit delays the address by a second delay time varying according to a voltage level of the back-bias voltage.

Abstract: A semiconductor memory apparatus may include a decoding unit configured to enable one of a plurality of sub word line driver enable signals by decoding a plurality of addresses while the decoding unit operates in a normal mode, and enables specific sub word line driver enable signals among the plurality of sub word line driver enable signals regardless of the plurality of addresses while the decoding unit is operating in a test mode. The semiconductor memory apparatus may include a sub word line driver group configured to include a plurality of sub word line drivers, the plurality of sub word line drivers configured for activation in response to the plurality of sub word line driver enable signals. The sub word line driver group is configured so that inactivated sub word line drivers are arranged between activated sub word line drivers while the decoding unit is operating in the test mode.

Abstract: Various embodiments generally relate to a semiconductor device and a device for a semiconductor device, and more particularly, to a technology relating to a margin of a data retention time. The semiconductor device may include a repair detection unit configured to determine whether an inputted address is a repair address and output a repair detection signal. The semiconductor device may include a refresh control unit configured to simultaneously activate two or more word lines in response to a refresh command signal and sequentially activate the two or more word lines according to the repair detection signal.

Abstract: Various embodiments generally relate to a semiconductor device and a device for a semiconductor device, and more particularly, to a technology relating to a margin of a data retention time. The semiconductor device may include a repair detection unit configured to determine whether an inputted address is a repair address and output a repair detection signal. The semiconductor device may include a refresh control unit configured to simultaneously activate two or more word lines in response to a refresh command signal and sequentially activate the two or more word lines according to the repair detection signal.

Abstract: A semiconductor memory apparatus may include a decoding unit configured to enable one of a plurality of sub word line driver enable signals by decoding a plurality of addresses while the decoding unit operates in a normal mode, and enables specific sub word line driver enable signals among the plurality of sub word line driver enable signals regardless of the plurality of addresses while the decoding unit is operating in a test mode. The semiconductor memory apparatus may include a sub word line driver group configured to include a plurality of sub word line drivers, the plurality of sub word line drivers configured for activation in response to the plurality of sub word line driver enable signals. The sub word line driver group is configured so that inactivated sub word line drivers are arranged between activated sub word line drivers while the decoding unit is operating in the test mode.

Abstract: A semiconductor apparatus includes a plurality of memory blocks divided into an even mat group and an odd mat group; and an active control block configured to activate any one group of the even mat group and the odd mat group at a first timing in response to a plurality of test signals, and activate the other group at a second timing.

Abstract: A semiconductor apparatus includes a plurality of memory blocks divided into an even mat group and an odd mat group; and an active control block configured to activate any one group of the even mat group and the odd mat group at a first timing in response to a plurality of test signals, and activate the other group at a second timing.

Abstract: A latch circuit may include a first inverting unit configured to drive a second node in response to a level of a first node, a second inverting unit configured to drive the first node in response to a level of the second node, an initialization unit configured to drive the first node at a first level in response to activation of an initialization signal, and a power breaker configured to break a supply of power of a second level to the second inverting unit when the initialization signal is activated.

Abstract: A sense amplifier control circuit according to the present invention is disposed in a bit line sense amplifier (BLSA) array region including a plurality of BLSAs and is configured to supply a precharge voltage to the plurality of BLSAs in response to a control signal.

Abstract: A sense amplifier control circuit according to the present invention is disposed in a bit line sense amplifier (BLSA) array region including a plurality of BLSAs and is configured to supply a precharge voltage to the plurality of BLSAs in response to a control signal.

Abstract: A latch circuit may include a first inverting unit configured to drive a second node in response to a level of a first node, a second inverting unit configured to drive the first node in response to a level of the second node, an initialization unit configured to drive the first node at a first level in response to activation of an initialization signal, and a power breaker configured to break a supply of power of a second level to the second inverting unit when the initialization signal is activated.

Abstract: A semiconductor integrated circuit includes a row main signal generation section configured to provide a row main signal serving as a driving reference for a plurality of row-series circuit units in response to a bank active signal, wherein activation timing of the row main signal is controlled by a test mode signal.

Abstract: A form of removable memory, such as a universal serial bus (USB) flash device, may enable a subscription-based computing system from any PC. The device may include an execution unit including a processor, a private memory including an encrypted application, a computing system interface, a cryptographic unit including a secure storage with a number of metering units, and a computer-readable medium. The computer-readable medium may include instructions for routing messages and data from the execution unit through the computing system interface to a connected computing system. Further, encrypted application data may be routed through the cryptographic unit to the execution unit to thereby transform the encrypted application into executable data for use by the computing system. Also, the device may decrement a number of metering units stored at the device during execution of the encrypted application by the computer.

Abstract: A method for receiving a superframe header at a mobile station in a wireless mobile communication system is disclosed. The method comprises receiving a sub-frame including the superframe header and a first data channel and decoding the received superframe header. Herein, the superframe header is located within a predetermined physical frequency band and the predetermined physical frequency band includes a synchronization channel.

Abstract: A semiconductor integrated circuit includes a row main signal generation section configured to provide a row main signal serving as a driving reference for a plurality of row-series circuit units in response to a bank active signal, wherein activation timing of the row main signal is controlled by a test mode signal.