Patents by Inventor Don Kendall

Don Kendall has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Strongly textured atomic ridge and dot MOSFETs, sensors and filters
    Patent number: 7019324
    Abstract: The present invention provides a MOSFET device comprising: a substrate including a plurality of atomic ridges, each of the atomic ridges including a semiconductor layer comprising Si and an dielectric layer comprising a Si compound; a plurality nanogrooves between the atomic ridges; at least one elongated molecule located in at least one of the nanogrooves; a porous gate layer located on top of the plurality of atomic ridges. The present invention also provides a membrane comprising: a substrate; and a plurality of nanowindows in the substrate and a method for forming nanowindows in a substrate.
    Type: Grant
    Filed: October 10, 2002
    Date of Patent: March 28, 2006
    Assignee: Starmega Corporation
    Inventor: Don Kendall
  • Strongly textured atomic ridge nanowindows
    Publication number: 20060006376
    Abstract: The present invention provides a MOSFET device comprising: a substrate including a plurality of atomic ridges, each of the atomic ridges including a semiconductor layer comprising Si and an dielectric layer comprising a Si compound; a plurality nanogrooves between the atomic ridges; at least one elongated molecule located in at least one of the nanogrooves; a porous gate layer located on top of the plurality of atomic ridges. The present invention also provides a membrane comprising: a substrate; and a plurality of nanowindows in the substrate and a method for forming nanowindows in a substrate.
    Type: Application
    Filed: September 15, 2005
    Publication date: January 12, 2006
    Applicant: Starmega Cororation
    Inventors: Don Kendall, Mark Guttag
  • Strongly textured atomic ridge and dot Mosfets, sensors and filters
    Patent number: 6509619
    Abstract: The present invention provides a MOSFET device comprising: a substrate including a plurality of atomic ridges, each of the atomic ridges including a semiconductor layer comprising Si and an dielectric layer comprising a Si compound; a plurality nanogrooves between the atomic ridges; at least one elongated molecule located in at least one of the nanogrooves; a porous gate layer located on top of the plurality of atomic ridges. The present invention also provides a membrane comprising: a substrate; and a plurality of nanowindows in the substrate and a method for forming nanowindows in a substrate.
    Type: Grant
    Filed: September 8, 2000
    Date of Patent: January 21, 2003
    Assignee: StarMega Corporation
    Inventors: Don Kendall, Mark J. Guttag
  • Strongly textured atomic ridge and dot fabrication
    Patent number: 6413880
    Abstract: The present invention provides a method for producing atomic ridges on a substrate comprising: depositing a first metal on a substrate; heating the substrate to form initial nanowires of the first metal on the substrate; depositing a second metal on the initial nanowires of the first metal to form thickened nanowires that are more resistant to etching than the initial nanowires; and etching the substrate to form atomic ridges separated by grooves having a pitch of 0.94 to 5.35 nm. The present invention also provides a method for forming Au and other metal nanowires that may be used for electrical conductors and both positive and negative etch masks to form a plurality of ridges at a pitch of 0.94 to 5.35 nm containing at least two adjacent grooves with widths of 0.63 to 5.04 nm.
    Type: Grant
    Filed: September 8, 2000
    Date of Patent: July 2, 2002
    Assignees: StarMega Corporation, Virginia Commonwealth University
    Inventors: Alison Baski, Don Kendall