Patents by Inventor Don L. Yates
Don L. Yates has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8872356Abstract: Methods of forming a Ni material on a bond pad are disclosed. The methods include forming a dielectric material over an at least one bond pad, forming an opening within the dielectric material to expose the at least one bond pad, curing the dielectric material to form a surface of the dielectric material having a steep curvilinear profile, and forming a nickel material over the at least one bond pad. The dielectric material having a steep curvilinear profile may be formed by altering at least one of a curing process of the dielectric material and a thickness of the dielectric material. The dielectric material may be used to form a relatively thick Ni material on bond pads smaller than about 50 ?m. Semiconductor structures formed by such methods are also disclosed.Type: GrantFiled: October 17, 2013Date of Patent: October 28, 2014Assignee: Micron Technology, Inc.Inventors: Jaspreet S. Gandhi, Don L. Yates, Yangyang Sun
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Patent number: 8703005Abstract: A method for removing a plurality of dielectric materials from a supporting substrate by providing a substrate with a plurality of materials, contacting the substrate at a first temperature with a solution to more quickly remove a first dielectric material than a second dielectric material at the first temperature, and then contacting the substrate at a second temperature with a solution to more quickly remove the second dielectric material than the first dielectric material at the second temperature. Thus, the dielectric materials exhibit different etch rates when etched at the first and second temperatures. The solutions to which the first and second dielectric materials are exposed may contain phosphoric acid. The first dielectric material may be silicon nitride and the second dielectric material may be silicon oxide. Under these conditions, the first temperature may be about 175° C., and the second temperature may be about 155° C.Type: GrantFiled: July 17, 2012Date of Patent: April 22, 2014Assignee: Micron Technology, Inc.Inventors: Li Li, Don L. Yates
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Publication number: 20140042618Abstract: Methods of forming a Ni material on a bond pad are disclosed. The methods include forming a dielectric material over a bond pad, forming an opening within the dielectric material to expose the bond pad, curing the dielectric material to form a surface of the dielectric material having a steep curvilinear profile, and forming a nickel material over the at least one bond pad. The dielectric material having a steep curvilinear profile may be formed by altering at least one of a curing process of the dielectric material and a thickness of the dielectric material. The dielectric material may be used to form a relatively thick Ni material on bond pads smaller than about 50 ?m. Semiconductor structures formed by such methods are also disclosed.Type: ApplicationFiled: October 17, 2013Publication date: February 13, 2014Applicant: Micron Technology, Inc.Inventors: Jaspreet S. Gandhi, Don L. Yates, Yangyang Sun
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Patent number: 8569167Abstract: Methods of forming a Ni material on a bond pad are disclosed. The methods include forming a dielectric material over a bond pad, forming an opening within the dielectric material to expose the bond pad, curing the dielectric material to form a surface of the dielectric material having a steep curvilinear profile, and forming a nickel material over the at least one bond pad. The dielectric material having a steep curvilinear profile may be formed by altering at least one of a curing process of the dielectric material and a thickness of the dielectric material. The dielectric material may be used to form a relatively thick Ni material on bond pads smaller than about 50 ?m. Semiconductor structures formed by such methods are also disclosed.Type: GrantFiled: March 29, 2011Date of Patent: October 29, 2013Assignee: Micron Technology, Inc.Inventors: Jaspreet S. Ghandi, Don L. Yates, Yangyang Sun
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Publication number: 20120282781Abstract: A method for removing a plurality of dielectric materials from a supporting substrate by providing a substrate with a plurality of materials, contacting the substrate at a first temperature with a solution to more quickly remove a first dielectric material than a second dielectric materials at the first temperature, and then contacting the substrate at a second temperature with a solution to more quickly remove the second dielectric material than the first dielectric material at the second temperature. Thus, the dielectric materials exhibit different etch rates when etched at the first and second temperatures. The solutions to which the first and second dielectric materials are exposed may contain phosphoric acid. The first dielectric material may be silicon nitride and the second dielectric material may be silicon oxide. Under these conditions, the first temperature may be about 175° C., and the second temperature may be about 155° C.Type: ApplicationFiled: July 17, 2012Publication date: November 8, 2012Applicant: MICRON TECHNOLOGY, INC.Inventors: Li Li, Don L. Yates
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Publication number: 20120248614Abstract: Methods of forming a Ni material on a bond pad are disclosed. The methods include forming a dielectric material over a bond pad, forming an opening within the dielectric material to expose the bond pad, curing the dielectric material to form a surface of the dielectric material having a steep curvilinear profile, and forming a nickel material over the at least one bond pad. The dielectric material having a steep curvilinear profile may be formed by altering at least one of a curing process of the dielectric material and a thickness of the dielectric material. The dielectric material may be used to form a relatively thick Ni material on bond pads smaller than about 50 ?m. Semiconductor structures formed by such methods are also disclosed.Type: ApplicationFiled: March 29, 2011Publication date: October 4, 2012Applicant: MICRON TECHNOLOGY, INC.Inventors: Jaspreet S. Gandhi, Don L. Yates, Yangyang Sun
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Patent number: 8221642Abstract: A method for removing a plurality of dielectric films from a supporting substrate by providing a substrate with a dielectric layer overlying another dielectric layer, contacting the substrate at a first temperature with an acid solution exhibiting a positive etch selectivity at the first temperature, and then contacting the substrate at a second temperature with an acid solution exhibiting a positive etch selectivity at the second temperature. The dielectric layers exhibit different etch rates when etched at the first and second temperatures. The first and second acid solutions may contain phosphoric acid. The first dielectric layer may be silicon nitride and the second dielectric layer may be silicon oxide. Under these conditions, the first temperature may be about 175° C. and the second temperature may be about 155° C.Type: GrantFiled: April 6, 2010Date of Patent: July 17, 2012Assignee: Micron Technology, Inc.Inventors: Li Li, Don L. Yates
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Patent number: 8187487Abstract: A method for removing (e.g., etching) different dielectric materials from a semiconductor substrate includes exposing the semiconductor substrate to a solution at temperatures below and at or above a set threshold. Below the threshold temperature, the solution removes one dielectric material (e.g., silicon nitride) faster than it removes another, different dielectric material (e.g., silicon oxide). At or above the threshold temperature, the selectivity of the solution is reversed.Type: GrantFiled: September 22, 2009Date of Patent: May 29, 2012Assignee: Micron Technology, Inc.Inventors: Li Li, Don L. Yates
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Publication number: 20100190351Abstract: A method for removing a plurality of dielectric films from a supporting substrate by providing a substrate with a dielectric layer overlying another dielectric layer, contacting the substrate at a first temperature with an acid solution exhibiting a positive etch selectivity at the first temperature, and then contacting the substrate at a second temperature with an acid solution exhibiting a positive etch selectivity at the second temperature. The dielectric layers exhibit different etch rates when etched at the first and second temperatures. The first and second acid solutions may contain phosphoric acid. The first dielectric layer may be silicon nitride and the second dielectric layer may be silicon oxide. Under these conditions, the first temperature may be about 175° C. and the second temperature may be about 155° C.Type: ApplicationFiled: April 6, 2010Publication date: July 29, 2010Applicant: Micron Technology, Inc.Inventors: Li Li, Don L. Yates
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Patent number: 7718084Abstract: A method for removing a plurality of dielectric films from a supporting substrate by providing a substrate with a dielectric layer overlying another dielectric layer, contacting the substrate at a first temperature with an acid solution exhibiting a positive etch selectivity at the first temperature, and then contacting the substrate at a second temperature with an acid solution exhibiting a positive etch selectivity at the second temperature. The dielectric layers exhibit different etch rates when etched at the first and second temperatures. The first and second acid solutions may contain phosphoric acid. The first dielectric layer may be silicon nitride and the second dielectric layer may be silicon oxide. Under these conditions, the first temperature may be about 175° C. and the second temperature may be about 155° C.Type: GrantFiled: May 3, 2004Date of Patent: May 18, 2010Assignee: Micron Technology, Inc.Inventors: Li Li, Don L. Yates
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Publication number: 20100022096Abstract: A method for removing (e.g., etching) different dielectric materials from a semiconductor substrate includes exposing the semiconductor substrate to a solution at temperatures below and at or above a set threshold. Below the threshold temperature, the solution removes one dielectric material (e.g., silicon nitride) faster than it removes another, different dielectric material (e.g., silicon oxide). At or above the threshold temperature, the selectivity of the solution is reversed.Type: ApplicationFiled: September 22, 2009Publication date: January 28, 2010Applicant: MICRON TECHNOLOGY, INC.Inventors: Li Li, Don L. Yates
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Patent number: 7591959Abstract: An etchant for removing materials with a plurality of selectivities exhibits a first etch selectivity at a first temperature and a second etch selectivity at a second temperature. The etchant may include phosphoric acid, fluoboric acid, or sulfuric acid. The materials that the etchant is configured to remove may include dielectric materials, such as silicon nitride and silicon oxide. The first temperature may be about 175° C. and the second temperature may be about 155° C.Type: GrantFiled: January 4, 2006Date of Patent: September 22, 2009Assignee: Micron Technology, Inc.Inventors: Li Li, Don L. Yates
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Publication number: 20040209473Abstract: A method for removing a plurality of dielectric films from a supporting substrate by providing a substrate with a dielectric layer overlying another dielectric layer, contacting the substrate at a first temperature with an acid solution exhibiting a positive etch selectivity at the first temperature, and then contacting the substrate at a second temperature with an acid solution exhibiting a positive etch selectivity at the second temperature. The dielectric layers exhibit different etch rates when etched at the first and second temperatures. The first and second acid solutions may contain phosphoric acid. The first dielectric layer may be silicon nitride and the second dielectric layer may be silicon oxide. Under these conditions, the first temperature may be about 175° C. and the second temperature may be about 155° C.Type: ApplicationFiled: May 3, 2004Publication date: October 21, 2004Inventors: Li Li, Don L. Yates
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Patent number: 6740248Abstract: A method for removing a plurality of dielectric films from a supporting substrate by providing a substrate with a second dielectric layer overlying a first dielectric layer, contacting the substrate at a first temperature with a first acid solution exhibiting a positive etch selectivity at the first temperature, and then contacting the substrate at a second temperature with a second acid solution exhibiting a positive etch selectivity at the second temperature. The first and second dielectric layers exhibit different etch rates in the first and second acid solutions. The first and second acid solutions may contain phosphoric acid. The first dielectric layer may be silicon nitride and the second dielectric layer may be silicon oxide. Under these conditions, the first temperature may be about 175° C. and the second temperature may be about 155° C.Type: GrantFiled: December 20, 2002Date of Patent: May 25, 2004Assignee: Micron Technology, Inc.Inventors: Li Li, Don L. Yates
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Publication number: 20030121884Abstract: A method for removing a plurality of dielectric films from a supporting substrate by providing a substrate with a second dielectric layer overlying a first dielectric layer, contacting the substrate at a first temperature with a first acid solution exhibiting a positive etch selectivity at the first temperature, and then contacting the substrate at a second temperature with a second acid solution exhibiting a positive etch selectivity at the second temperature. The first and second dielectric layers exhibit different etch rates in the first and second acid solutions. The first and second acid solutions may contain phosphoric acid. The first dielectric layer may be silicon nitride and the second dielectric layer may be silicon oxide. Under these conditions, the first temperature may be about 175° C. and the second temperature may be about 155° C.Type: ApplicationFiled: December 20, 2002Publication date: July 3, 2003Inventors: Li Li, Don L. Yates
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Patent number: 6497827Abstract: A method for removing a plurality of dielectric films from a supporting substrate by providing a substrate with a second dielectric layer overlying a first dielectric layer, contacting the substrate at a first temperature with a first acid solution exhibiting a positive etch selectivity at the first temperature, and then contacting the substrate at a second temperature with a second acid solution exhibiting a positive etch selectivity at the second temperature. The first and second dielectric layers exhibit different etch rates in the first and second acid solutions. The first and second acid solutions may contain phosphoric acid. The first dielectric layer may be silicon nitride and the second dielectric layer may be silicon oxide. Under these conditions, the first temperature may be about 175° C. and the second temperature may be about 155° C.Type: GrantFiled: March 3, 2000Date of Patent: December 24, 2002Assignee: Micron Technology Inc.Inventors: Li Li, Don L. Yates
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Patent number: 6117351Abstract: A method for removing a plurality of dielectric films from a supporting substrate by providing a substrate with a second dielectric layer overlying a first dielectric layer, contacting the substrate at a first temperature with a first acid solution exhibiting a positive etch selectivity at the first temperature, and then contacting the substrate at a second temperature with a second acid solution exhibiting a positive etch selectivity at the second temperature. The first and second dielectric layers exhibit different etch rates in the first and second acid solutions. The first and second acid solutions may contain phosphoric acid. The first dielectric layer may be silicon nitride and the second dielectric layer may be silicon oxide. Under these conditions, the first temperature may be about 175.degree. C. and the second temperature may be about 155.degree. C.Type: GrantFiled: April 6, 1998Date of Patent: September 12, 2000Assignee: Micron Technology, Inc.Inventors: Li Li, Don L. Yates