Abstract: An integrated power module having a depletion mode device and an enhancement mode device that is configured to prevent an accidental on-state condition for the depletion mode device during a gate signal loss is disclosed. In particular, the disclosed integrated power module is structured to provide improved isolation and thermal conductivity. The structure includes a substrate having a bottom drain pad for the depletion mode device disposed on the substrate and an enhancement mode device footprint-sized cavity that extends through the substrate to the bottom drain pad. A thermally conductive and electrically insulating slug substantially fills the cavity to provide a higher efficient thermal path between the enhancement mode device and the bottom drain pad for the depletion mode device.

Abstract: An integrated power module having a depletion mode device and an enhancement mode device that is configured to prevent an accidental on-state condition for the depletion mode device during a gate signal loss is disclosed. In particular, the disclosed integrated power module is structured to provide improved isolation and thermal conductivity. The structure includes a substrate having a bottom drain pad for the depletion mode device disposed on the substrate and an enhancement mode device footprint-sized cavity that extends through the substrate to the bottom drain pad. A thermally conductive and electrically insulating slug substantially fills the cavity to provide a higher efficient thermal path between the enhancement mode device and the bottom drain pad for the depletion mode device.

Abstract: A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a semiconductor stack structure attached to a wafer handle having at least one aperture that extends through the wafer handle to an exposed portion of the semiconductor stack structure. A thermally conductive and electrically resistive polymer substantially fills the at least one aperture and contacts the exposed portion of the semiconductor stack structure. One method for manufacturing the semiconductor device includes forming patterned apertures in the wafer handle to expose a portion of the semiconductor stack structure. The patterned apertures may or may not be aligned with sections of RF circuitry making up the semiconductor stack structure. A following step includes contacting the exposed portion of the semiconductor stack structure with a polymer and substantially filling the patterned apertures with the polymer, wherein the polymer is thermally conductive and electrically resistive.

Abstract: A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a semiconductor stack structure attached to a wafer handle having at least one aperture that extends through the wafer handle to an exposed portion of the semiconductor stack structure. A thermally conductive and electrically resistive polymer substantially fills the at least one aperture and contacts the exposed portion of the semiconductor stack structure. One method for manufacturing the semiconductor device includes forming patterned apertures in the wafer handle to expose a portion of the semiconductor stack structure. The patterned apertures may or may not be aligned with sections of RF circuitry making up the semiconductor stack structure. A following step includes contacting the exposed portion of the semiconductor stack structure with a polymer and substantially filling the patterned apertures with the polymer, wherein the polymer is thermally conductive and electrically resistive.

Abstract: A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a semiconductor stack structure having a first surface and a second surface. A polymer substrate having a high thermal conductivity and a high electrical resistivity is disposed onto the first surface of the semiconductor stack structure. One method includes providing the semiconductor stack structure with the first surface in direct contact with a wafer handle. A next step involves removing the wafer handle to expose the first surface of the semiconductor stack structure. A following step includes disposing a polymer substrate having high thermal conductivity and high electrical resistivity directly onto the first surface of the semiconductor stack structure.

Abstract: A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a semiconductor stack structure having a first surface and a second surface. A first polymer having a high thermal conductivity and a high electrical resistivity is disposed on the first surface of the semiconductor stack structure. An exemplary method includes providing the semiconductor stack structure with the second surface in direct contact with a wafer handle. A next step involves removing the wafer handle to expose the second surface of the semiconductor stack structure. A following step includes disposing a second polymer having high thermal conductivity and high electrical resistivity directly onto the second surface of the semiconductor stack structure. Additional methods apply silicon nitride layers on the first surface and second surface of the semiconductor stack structure before disposing the first polymer and second polymer to realize the semiconductor device.

Abstract: A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a semiconductor stack structure attached to a wafer handle having at least one aperture that extends through the wafer handle to an exposed portion of the semiconductor stack structure. A thermally conductive and electrically resistive polymer substantially fills the at least one aperture and contacts the exposed portion of the semiconductor stack structure. One method for manufacturing the semiconductor device includes forming patterned apertures in the wafer handle to expose a portion of the semiconductor stack structure. The patterned apertures may or may not be aligned with sections of RF circuitry making up the semiconductor stack structure. A following step includes contacting the exposed portion of the semiconductor stack structure with a polymer and substantially filling the patterned apertures with the polymer, wherein the polymer is thermally conductive and electrically resistive.

Abstract: An efficient and scalable system for identifying a commodity having a specific, unique topocompositional profile has been developed that includes: enrolling at least one commodity in order to capture its topocompositional profile; matching the at least one commodity with a plurality of commodities in a commodity database; and integrating the topocompositional profile into a commodity grading system. A method of identifying a commodity having a specific, unique topocompositional profile, includes enrolling at least one commodity in order to capture its topocompositional profile; matching the at least one commodity with a plurality of commodities in a commodity database; and integrating the topocompositional profile into a commodity grading system.

Abstract: A hollow cylindrical scoop-shaped device facilitates scooping of solid and semi-solid refuse off hard ground or vegetation covered ground through manipulation of the device by a pivotally attached handle attached forwardly of the center of gravity of the device. The refuse scooped is collected in a detachably attached trailing disposable clamp secured conventional paper sack or plastic bag protected by a guard at the bottom of the device. The handle includes a detachably attached paddle for manual use in sweeping the refuse off sidewalks and the like into the scoop.

Abstract: Device for sampling air in proportion to respiration, particularly the collection of air pollutants in proportion to the actual respiration of the wearer. The device includes a pump supported adjacent the thoracic cavity and activated by the expansion and contraction of the thoracic cavity during respiration, so as to draw air through an air sampling monitor.

Abstract: Method for sampling air in proportion to respiration, particularly the collection of air pollutants in proportion to the actual respiration of the wearer. The method is characterized by its use of a pump supported adjacent the thoracic cavity and activated by the expansion and contraction of the thoracic cavity during respiration, so as to draw air through an air sampling monitor.

Abstract: Device for sampling air in proportion to respiration, particularly the collection of air pollutants in proportion to the actual respiration of the wearer. The pump is supported adjacent the thoracic cavity by means of a harness and is activated by the expansion and contraction of the thoracic cavity during respiration, so as to draw air through an air sampling monitor.

Abstract: Method for sampling air in proportion to respiration, particularly the collection of air pollutants in proportion to the actual respiration of the wearer. The method is characterized by its use of a pump supported adjacent the thoracic cavity and activated by the expansion and contraction of the thoracic cavity during respiration, so as to draw air through an air sampling monitor.

Abstract: A hollow cylindrical scoop-shaped device facilitates scooping of solid and semi-solid refuse off hard ground or vegetation covered ground through manipulation of the device by a directly attached handle or by an extended handle. The refuse scooped is collected in a detachably attached trailing disposable conventional paper sack. A clamp secures any sized opening paper sack and a guard about the bottom of the device receives the lower edge of the sack to prevent tearing and/or wetting thereof during use of the device.