Patents by Inventor Donai P. McAuliffe

Donai P. McAuliffe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device, and a method of improving breakdown voltage of a semiconductor device
    Patent number: 9252260
    Abstract: A semiconductor device having a first layer adjoining a semiconductor layer, and further comprising at least one field modification structure positioned such that, in use, a potential at the field modification structure causes an E-field vector at a region of an interface between the semiconductor and the first layer to be modified.
    Type: Grant
    Filed: July 11, 2013
    Date of Patent: February 2, 2016
    Assignee: Analog Devices Global
    Inventors: Edward John Coyne, Breandan Pol Og O hAnnaidh, Seamus P. Whiston, William Allan Lane, Donai P. McAuliffe