Abstract: Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.

Abstract: Methods for treating a semiconductor material, and for making devices containing a semiconducting material, are presented. One embodiment is a method for treating a semiconductor material that includes a chalcogenide. The method comprises contacting at least a portion of the semiconductor material with a chemical agent. The chemical agent comprises a solvent, and an iodophor dissolved in the solvent.

Abstract: Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.

Abstract: Photovoltaic devices are presented. A photovoltaic device includes a window layer and a semiconductor layer including a semiconductor material disposed on window layer. The semiconductor layer includes a first region and a second region, the first region disposed proximate to the window layer, and the second region including a chalcogen-rich region, wherein the first region and the second region include a dopant, and an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region.

Abstract: Early warning of changing health and robustness is given by tracking of ease of morphological changes in blood cells obtained by comparing intensities in a first scattered light intensity angular distribution and intensities in a second scattered light intensity angular distribution, with the light being scattered by blood cells into very narrowly forward scattered light intensity angular range.

Abstract: An apparatus for supporting and assisting a user to get into and out of a kneeling position comprises a platform extending between first and second edges, each edge having two corners, a frame accommodating the platform therebetween and at least one biased arm extending between the platform and the frame, the biased arm being adapted to bias the platform from a first position located proximate to a ground surface to a second position vertically spaced above the first position.

Abstract: A method of making a photovoltaic device is presented. The method includes disposing an absorber layer on a window layer. The method further includes treating at least a portion of the absorber layer with a first solution including a first metal salt to form a first component, wherein the first metal salt comprises a first metal selected from the group consisting of manganese, cobalt, chromium, zinc, indium, tungsten, molybdenum, and combinations thereof. The method further includes treating at least a portion of the first component with cadmium chloride to form a second component. The method further includes treating at least a portion of the second component with a second solution including a second metal salt to form an interfacial layer on the second component, wherein the second metal salt comprises a second metal selected from the group consisting of manganese, cobalt, nickel, zinc, and combinations thereof.

Abstract: Systems, methods and apparatus for monitoring rub detection in a machine are provided. An electrical signal may be provided for transmission to and into a component of the machine. A capacitance associated with the electrical signal in the component may be monitored. Based at least in part upon a determined change in the monitored capacitance, a potential rub condition for the component of the machine.

Abstract: A method of making a photovoltaic device is presented. The method includes disposing an absorber layer on a window layer. The method further includes treating at least a portion of the absorber layer with a first solution including a first metal salt to form a first component, wherein the first metal salt comprises a first metal selected from the group consisting of manganese, cobalt, chromium, zinc, indium, tungsten, molybdenum, and combinations thereof. The method further includes treating at least a portion of the first component with cadmium chloride to form a second component. The method further includes treating at least a portion of the second component with a second solution including a second metal salt to form an interfacial layer on the second component, wherein the second metal salt comprises a second metal selected from the group consisting of manganese, cobalt, nickel, zinc, and combinations thereof.

Abstract: Methods for treating a semiconductor material, and for making devices containing a semiconducting material, are presented. One embodiment is a method for treating a semiconductor material that includes a chalcogenide. The method comprises contacting at least a portion of the semiconductor material with a chemical agent. The chemical agent comprises a solvent, and an iodophor dissolved in the solvent.

Abstract: A method of making a photovoltaic device is presented. The method includes disposing an absorber layer on a window layer. The method further includes treating at least a portion of the absorber layer with a first solution including a first metal salt to form a first component, wherein the first metal salt comprises a first metal selected from the group consisting of manganese, cobalt, chromium, zinc, indium, tungsten, molybdenum, and combinations thereof. The method further includes treating at least a portion of the first component with cadmium chloride to form a second component. The method further includes treating at least a portion of the second component with a second solution including a second metal salt to form an interfacial layer on the second component, wherein the second metal salt comprises a second metal selected from the group consisting of manganese, cobalt, nickel, zinc, and combinations thereof.

Abstract: A phased array antenna includes a semiconductor wafer, with radio frequency (RF) circuitry fabricated on top side of the semiconductor wafer. There is an array of antenna elements above the top side of the semiconductor wafer, and a coaxial coupling arrangement coupling the RF circuitry and the array of antenna elements. The coaxial coupling arrangement may include a plurality of coaxial connections, each having an outer conductor, an inner conductor, and a dielectric material therebetween. The dielectric material may be air.

Abstract: Methods for treating a semiconductor material, and for making devices containing a semiconducting material, are presented. One embodiment is a method for treating a semiconductor material that includes a chalcogenide. The method comprises contacting at least a portion of the semiconductor material with a chemical agent. The chemical agent comprises a solvent, and an iodophor dissolved in the solvent.

Abstract: Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.

Abstract: Photovoltaic devices are presented. A photovoltaic device includes a window layer and a semiconductor layer including a semiconductor material disposed on window layer. The semiconductor layer includes a first region and a second region, the first region disposed proximate to the window layer, and the second region including a chalcogen-rich region, wherein the first region and the second region include a dopant, and an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region.

Abstract: An apparatus for supporting a user comprising a platform extending between first and second edges each having two corners, a frame having four substantially parallel uprights located proximate to each of the first and second edges of the platform, each of said uprights slidably locating said platform proximate to a corner of said platform and an elastic support member extending between each of the first and second edges of the platform and the frame so as suspend the platform from the frame. The platform is biased from a first position located proximate to a ground surface to a second position vertically spaced above the first position by the elastic support members, wherein said first and second positions are substantially parallel to each other.

Abstract: One aspect of the present invention includes a method of making a photovoltaic device. The method includes disposing an absorber layer on a window layer. The method further includes treating at least a portion of the absorber layer with a first solution including a first metal salt to form a first component, wherein the first metal salt comprises a first metal selected from the group consisting of manganese, cobalt, chromium, zinc, indium, tungsten, molybdenum, and combinations thereof. The method further includes treating at least a portion of the first component with cadmium chloride to form a second component. The method further includes treating at least a portion of the second component with a second solution including a second metal salt to form an interfacial layer on the second component, wherein the second metal salt comprises a second metal selected from the group consisting of manganese, cobalt, nickel, zinc, and combinations thereof.

Abstract: One aspect of the present invention includes a photovoltaic device. The photovoltaic device includes a window layer disposed on a support and a doped absorber layer disposed on the window layer, wherein the doped absorber layer includes an absorber material and a first metal selected from the group consisting of manganese, cobalt, chromium, zinc, indium, tungsten, molybdenum, and combinations thereof. The photovoltaic devices further includes an interfacial layer disposed on the doped absorber layer, wherein the interfacial comprises a second metal selected from the group consisting of manganese, cobalt, nickel, zinc, and combinations thereof.

Abstract: A phased array antenna includes a semiconductor wafer, with radio frequency (RF) circuitry fabricated on top side of the semiconductor wafer. There is an array of antenna elements above the top side of the semiconductor wafer, and a coaxial coupling arrangement coupling the RF circuitry and the array of antenna elements. The coaxial coupling arrangement may include a plurality of coaxial connections, each having an outer conductor, an inner conductor, and a dielectric material therebetween. The dielectric material may be air.

Abstract: Systems, methods and apparatus for monitoring rub detection in a machine are provided. An electrical signal may be provided for transmission to and into a component of the machine. A capacitance associated with the electrical signal in the component may be monitored. Based at least in part upon a determined change in the monitored capacitance, a potential rub condition for the component of the machine.