Abstract: An apparatus and method are present which use X-ray fluorescence techniques to determine the roughness of a target surface. The apparatus includes an X-ray source and an X-ray detector. The X-ray source produces primary X-ray photons formed into a primary X-ray beam, and the primary X-ray beam is directed to and incident upon the target surface. The X-ray detector is positioned to receive primary X-ray photons scattered by the target surface. A fraction of the primary X-ray photons scattered by the target surface is directly proportional to the roughness of the target surface. The roughness of the target surface is determined from the number of primary X-ray photons scattered by the target surface and received by the X-ray detector within a predetermined exposure time. The X-ray detector produces an output signal proportional to the energy levels of received X-ray photons. An energy range of interest is divided into segments.

Abstract: An apparatus and method are presented for determining the identity and quantity of elements embedded within a thin film. A radioisotopic source produces a beam of primary x-rays which impinge at near-grazing angles upon a sample consisting of a thin film and an underlying semiconductor substrate. The beam of primary x-rays cause the emission of characteristic secondary x-ray photons from the thin film of the sample. These secondary x-ray photons are detected by a detector positioned above the sample. The detected X-ray photons are counted and their energies are determined, allowing for the determination of the identity and quantity of elements within the thin film.

Abstract: An apparatus and method are presented for determining the elemental compositions and relative locations of particles on a surface of a semiconductor wafer. An exposed region of the surface of the semiconductor wafer is subjected to a beam of primary X-ray photons, and secondary X-ray photons emitted by atoms of elements on and just under the surface of the semiconductor wafer are detected by an X-ray detector array which includes multiple X-ray detectors. Each X-ray detector produces an output signal which is proportional to energy levels of incident X-ray photons. The X-ray detectors are laterally displaced from one another, and arranged to allow two-dimensional resolution of detected secondary X-ray photons emitted by atoms of elements on the surface of the semiconductor wafer. The X-ray detector array is preferably an electronic area image sensor including a two-dimensional array of photosensor elements formed upon a monolithic semiconductor substrate.

Abstract: A method is provided for measuring at resolutions which are in some instances less than 20 nanometers the concentration densities within one or more diffusion regions within a semiconductor substrate. The diffusion regions are prepared for measurement by cleaving a cross-sectional surface and polishing that surface to a substantially flat, exposed profile. The profile is purposefully pre-etched to remove oxide abutting the implant area and thereafter dopant-selective etched in accordance with concentration densities within the substrate. Pre-etching of oxide and concentration density etching of doped silicon provides an exposed topological contour measurable by atomic force microscopy (AFM). AFM can detect the entire cross-sectional surface including conductors and dielectrics. The topological height of impurity region profiles of a calibration wafer are correlated to impurity concentrations to form a calibration curve.