Abstract: The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel.

Abstract: Container structures for use in integrated circuits and methods of their manufacture without the use of mechanical planarization such as chemical-mechanical planarization (CMP), thus eliminating CMP-induced defects and variations. The methods utilize localized masking of holes for protection of the inside of the holes during non-mechanical removal of exposed surface layers. The localized masking is accomplished through differential exposure of a resist layer to electromagnetic or thermal energy. The container structures are adapted for use in memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.

Abstract: The invention includes semiconductor processing patterning methods and semiconductor constructions. A semiconductor processing patterning method includes forming a second composition resist layer over a different first composition resist layer. Overlapping portions of the first and second composition resist layers are exposed to actinic energy effective to change solubility of the exposed portions versus the unexposed portions of each of the first and second composition resist layers in a developer solution. The first and second composition resist layers are developed with the developer solution under conditions effective to remove the exposed portions of the first composition resist layer at a faster rate than removing the exposed portions of the second composition resist layer. Additional aspects and implementations are contemplated.

Abstract: The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel.

Abstract: The present invention provides a method of fabricating a portion of a memory cell, the method comprising providing a first conductor in a trench which is provided in an insulating layer and flattening an upper surface of the insulating layer and the first conductor, forming a material layer over the flattened upper surface of the insulating layer and the first conductor and flattening an upper portion of the material layer while leaving intact a lower portion of the material layer over the insulating layer and the first conductor.

Abstract: A method for forming an MRAM bit is described that includes providing a covering layer over an integrated circuit structure. In one embodiment, the covering layer includes tantalum. A first mask layer is formed over the covering layer followed by a second mask layer. The first mask layer and second mask layer are etchable by the same etching process. The first and second mask layer are etched. Etch residue is removed from the first and second mask layers. The first mask layer is then selectively removed and the second mask layer remains.

Abstract: A method and apparatus for reducing the contaminants in a wet etching bath by rapidly removing a substantial portion of the etching liquid from the bath such that the contaminants are removed from the air/liquid interface of the bath surface is describe. By rapidly removing a substatial portion of the etching liquid from the bath, contaminants that are trapped by eddy currents and liquid/air surface tension forces are greatly reduced at the surface of the bath. The semiconductor wafers treated showed reduced levels of contamination.

Abstract: A portable spectator seat for use on stadium benches which includes a seat portion and a backrest that an individual user may easily fold together for carrying and easily unfold into an open position for use. In use, the seat portion rests on a stadium bench and the backrest extends upwardly from the back of the seat portion. The seat portion is strapped to the backrest by scissor hinges that prevent relative movement of the seat portion and backrest while the seat portion is occupied by a user. The spectator seat is light weight for easy carrying and is made from a suitably durable plastic or metal.

Abstract: A relight fuel flow schedule controls fuel flow to the combustor of a turbofan aeroengine during in-flight relight procedures. A first fuel ramp, whose slope decreases with increasing altitude, enables the combustor to light with minimum fuel flow for the altitude and thus helps to prevent overfueling. The fuel flow rate undergoes a step reduction, after detection of satisfactory combustion, to prevent compressor stall, but cannot drop below a predetermined level to guard against flameout. The first fuel ramp is repeated if satisfactory combustion does not occur. After a successive relight a second fuel ramp is varied from flat to positive slope depending on the ratio of the rate of change of high pressure compressor speed to a datum level in order to prevent a hung start and accelerate the engine until normal acceleration control laws takes over.

Abstract: A hand gun case for storage of a pistol comprising a main body having an opening formed at the upper portion thereof to form a pocket or enclosure to receive and house the pistol and a closure flap movable between an open and closed position extending outwardly from the main body adjacent the opening to enclose the pistol within the hand gun case when in the closed position in combination with a first closure element including a first and second member formed on the main body and closure flap respectively and a second closure element formed on the main body to selectively secure the closure flap in the closed position.