Abstract: A semiconductor structure, which serves as the core of a semiconductor fabrication platform, has a combination of empty-well regions and filled-well regions variously used by electronic elements, particularly insulated-gate field-effect transistors (“IGFETs”), to achieve desired electronic characteristics. A relatively small amount of semiconductor well dopant is near the top of an empty well. A considerable amount of semiconductor well dopant is near the top of a filled well. Some IGFETs (100, 102, 112, 114, 124, and 126) utilize empty wells (180, 182, 192, 194, 204, and 206) in achieving desired transistor characteristics. Other IGFETs (108, 110, 116, 118, 120, and 122) utilize filled wells (188, 190, 196, 198, 200, and 202) in achieving desired transistor characteristics.

Abstract: “Call casting” is the ability to create a broadcasted multimedia file from a telephonic device. A content originator selects an option to create a call cast from the telephonic device, and a processing unit receives a communication utilized in creating an episode file. The episode file is associated with a feed file, which is accessed by an audience. The feed file may be accessible from a user website. Additionally, the communication received by the processing unit may originate from the telephonic device or a voicemail server. The processing unit may comprise a voicemail server. The content originator may be provided with one or more options that affect the creation of the episode file or the association of the episode file to the feed file. These options may be provided over the telephonic device, or through use of an administrative website.

Abstract: Voltage regulators are exposed to extreme amounts of voltage over short periods of time during an electrostatic discharge (ESD) event. Shunt regulators require protection from ESD events. Capacitors are passive devices that allow current flow when not in a steady-state condition. An apparatus and method compensates for the extreme voltages inherent in ESD events. By providing capacitance across the gate-drain junction of the shunt device in combination with a gate resistor, a voltage can be applied to the gate of the active device upon commencement of an ESD event, and cause the active device to “turn on” The “turned on” active device provides a pathway for the excess voltage from the ESD event to follow and discharge so as to avoid catastrophic failures.

Abstract: An op amp bias system that provides input offset voltage trim current with minimum offset thermal drift. The bias system includes a bias generator that provides bias current to the op amp and correction circuitry responsive to the bias current for providing an input offset trim current that compensates for offset drift error with changes in temperature.