Abstract: An interconnect structure is disclosed for use in solid oxide electrolytic devices that use chrome-containing components, such as solid oxide fuel cells and solid oxide oxygen-generators. The invention provides a reliable and durable interconnect for both structural and electrical components of such devices. In general, the interconnect structure relies on a dual-layer, high-temperature seal which provides an effective diffusion barrier for both chrome and oxygen. As a result of the described interconnect, corrosion or loss in electrical conductivity in such solid oxide electrolytic devices is avoided. Also, a novel structure for such solid oxide electrolytic devices is disclosed, which provides an economical and high-integrity structure that utilizes the disclosed interconnect structure. A result of the present invention is that thin film solid oxide fuel cells and solid oxide oxygen generators may be fabricated using only metal alloys as bulk components.

Abstract: A laser cavity structure is disclosed which pertains to laser resonator geometries possessing circular symmetry, such as in the case of disk or spherical lasers. The disclosed invention utilizes a very-high finesse Bragg reflector (VHF-BR) thin film reflectors of many layer pairs of very small refractive index difference, the VHF-BR deposited on a surface of revolution, thereby forming an optical cavity. These dielectric reflectors are disposed in such a way as to allow selection of preferred low order modes and suppression of parasitic modes while allowing a high cavity Q factor for preferred modes. The invention disclosed, in its preferred embodiments, is seen as particularly useful in applications requiring high efficiency in the production and coupling of coherent radiation. This is accomplished in a cavity design that is relatively compact and economical.

Abstract: A novel laser cavity structure is disclosed which pertains to laser resonator geometries possessing circular symmetry, such as in the case of disk or spherical lasers. The disclosed invention utilizes a very-high finesse Bragg reflector (VHF-BR) thin film reflectors of many layer pairs of very small refractive index difference, the VHF-BR deposited on a surface of revolution, thereby forming an optical cavity. These dielectric reflectors are disposed in such a way as to allow selection of preferred low order modes and suppression of parasitic modes while allowing a high cavity Q factor for preferred modes. The invention disclosed, in its preferred embodiments, is seen as particularly useful in applications requiring high efficiency in the production and coupling of coherent radiation. This is accomplished in a cavity design that is relatively compact and economical. Of particular novelty is the combination of the disclosed cavity design with polymer multilayers.

Abstract: An interconnect structure is disclosed for use in solid oxide electrolytic devices that use chrome-containing components, such as solid oxide fuel cells and solid oxide oxygen-generators. The invention provides a reliable and durable interconnect for both structural and electrical components of such devices. In general, the interconnect structure relies on a dual-layer, high-temperature seal which provides an effective diffusion barrier for both chrome and oxygen. As a result of the described interconnect, corrosion or loss in electrical conductivity in such solid oxide electrolytic devices is avoided. Also, a novel structure for such solid oxide electrolytic devices is disclosed, which provides an economical and high-integrity structure that utilizes the disclosed interconnect structure. A result of the present invention is that thin film solid oxide fuel cells and solid oxide oxygen generators may be fabricated using only metal alloys as bulk components.

Abstract: A novel laser apparatus is disclosed which pertains to laser resonator geometries possessing circular symmetry, such as in the case of disk or spherical lasers. The disclosed invention utilizes multi-layer dielectric (MLD) thin film reflectors of many layer pairs of very small refractive index difference, the MLD deposited on a surface of revolution, thereby forming an optical cavity. These dielectric reflectors are disposed in such a way as to allow selection of preferred low order modes and suppression of parasitic modes while allowing a high cavity Q factor for preferred modes. The invention disclosed, in its preferred embodiments, is seen as particularly useful in applications requiring high efficiency in the production and coupling of coherent radiation. This is accomplished in a cavity design that is relatively compact and economical.

Abstract: An interconnect structure is disclosed for use in solid oxide electrolytic devices that use chrome-containing components, such as solid oxide fuel cells and solid oxide oxygen-generators. The invention provides a reliable and durable interconnect for both structural and electrical components of such devices. In general, the interconnect structure relies on a dual-layer, high-temperature seal which provides an effective diffusion barrier for both chrome and oxygen. As a result of the described interconnect, corrosion or loss in electrical conductivity in such solid oxide electrolytic devices is avoided. Also, a novel structure for such solid oxide electrolytic devices is disclosed, which provides an economical and high-integrity structure that utilizes the disclosed interconnect structure. A result of the present invention is that thin film solid oxide fuel cells and solid oxide oxygen generators may be fabricated using only metal alloys as bulk components.

Abstract: Previous limitations in utilizing energetic vapor deposition means are addressed through the introduction of a novel means of vapor deposition, namely, an Electron-Assisted Deposition (EAD) process and apparatus. The EAD mode of film growth disclosed herein is generally achieved by, first, forming a magnetic field that possesses field lines that intersect electrically non-grounded first and second surfaces, wherein at least one surface is a workpiece, thereby forming a magnetic trap between first and second surfaces; second, introducing a high flux of electrons axially into the magnetic field existing between the first and second surfaces, so that the electrons form an electron-saturated space-charge in the space adjacent to the substrate, wherein plasma interactions with the substrate are substantially avoided, and modification of film growth processes is provided predominantly by electron—rather than plasma—bombardment.

Abstract: A sputtering system for the depositing or etching of insulating, conducting, or semiconducting thin films is disclosed, in which the sputtering plasma is irradiated with a transverse, adjustable ultraviolet emission produced by an ultraviolet optical cavity containing a lamp discharge. The cavity irradiates the sputtering plasma volume with a sufficiently high optical flux to enact significant changes in the film produced. This effect is enabled by the device geometry, which, in the preferred embodiment, provides uniquely high efficiency and stability in the optical coupling between the lamp discharge and the sputtering plasma, resulting in the ability to significantly alter ionized and excited state populations within or above the sputtering plasma. The design also allows the operator to significantly control the volume and species involved in the optical interaction. A novel ultraviolet source for materials processing is also disclosed.

Abstract: A light source is disclosed that is well-suited for materials photo-processing of low-absorption media. The present invention utilizes optical filters of very high effective finesse in an optical cavity arrangement, wherein the material medium to be processed traverses a central process space of the cavity. In its preferred embodiment, the disclosed optical system is used for ultraviolet treatment of low-pressure vapors in semiconductor processes such as sputter deposition and etching. The cavity irradiates the vapor with a sufficiently high optical flux to enact significant modification, while avoiding interaction with other components of the materials process. A sputtering apparatus for the depositing or etching of insulating, conducting, or semiconducting thin films is also disclosed, in which the sputtering plasma is irradiated with transverse ultraviolet emission produced by the disclosed light source.

Abstract: A method for depositing films of a fluorinated compound is disclosed, wherein a reactive sputtering process allows the use of a metal or other non-fluorinated material as the target material. The process developed also utilizes XeF2 as a vapor source, which provides fluorine for the formation of the fluorinated compound. Unlike reactive process gases, such as SF4 and CF4, used in previous experiments attempting reactive sputtering of fluoride compounds, the XeF2 vapor does not result in unwanted contamination due to a reactive gas cation, i.e., inclusions of carbon or sulfur. These, and other considerations, have allowed the development of a process for fabricating dense, optical quality fluoride films. At the same time, the material costs and handling expenses related to the XeF2 source are also relatively low.

Abstract: A system for the depositing of insulating, conducting, or semiconducting thin films is disclosed, in which the sputtering plasma is irradiated with a transverse, adjustable ultraviolet emission produced by an ultraviolet optical cavity containing a lamp discharge. The cavity irradiates the sputtering plasma volume with a sufficiently high optical flux to enact significant changes in the film produced. This effect is enabled by the device geometry, which, in the preferred embodiment, provides uniquely high efficiency and stability in the optical coupling between the lamp discharge and the sputtering plasma, resulting in the ability to significantly alter ionized and excited state populations within and directly above the sputtering plasma. The design also allows the operator to significantly control the volume and species involved in the optical interaction.